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STMicroelectronics |
IC EEPROM 256KBIT 5MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock52,248 |
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EEPROM | EEPROM | 256Kb (32K x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SO |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 200MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 36Mb (2M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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Package: 165-LBGA |
Stock3,232 |
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SRAM | SRAM - Synchronous, QDR II | 36Mb (2M x 18) | Parallel | 200MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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IDT, Integrated Device Technology Inc |
IC SRAM 32KBIT 35NS 68PGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 32Kb (2K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 68-BPGA
- Supplier Device Package: 68-PGA (29.46x29.46)
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Package: 68-BPGA |
Stock2,352 |
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SRAM | SRAM - Dual Port, Asynchronous | 32Kb (2K x 16) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
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IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 55NS 24CDIP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 24-CDIP (0.600", 15.24mm)
- Supplier Device Package: 24-CDIP
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Package: 24-CDIP (0.600", 15.24mm) |
Stock7,360 |
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SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.600", 15.24mm) | 24-CDIP |
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Cypress Semiconductor Corp |
IC SRAM 9MBIT 166MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock6,784 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 8NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock4,256 |
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SRAM | SRAM - Synchronous ZBT | 4.5Mb (128K x 36) | Parallel | - | - | 8ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 25NS 28SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
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Package: 28-BSOJ (0.300", 7.62mm Width) |
Stock6,144 |
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SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock2,704 |
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DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 8MBIT 133MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-WSON (5x6)
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Package: 8-WFDFN Exposed Pad |
Stock4,848 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 800µs | - | 2.3 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-WSON (5x6) |
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Microchip Technology |
IC EEPROM 4KBIT 100KHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: Single Wire
- Clock Frequency: 100kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock6,848 |
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EEPROM | EEPROM | 4Kb (512 x 8) | Single Wire | 100kHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Alliance Memory, Inc. |
IC SRAM 256KBIT 15NS 28DIP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-DIP (0.300", 7.62mm)
- Supplier Device Package: 28-PDIP
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Package: 28-DIP (0.300", 7.62mm) |
Stock15,768 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-DIP (0.300", 7.62mm) | 28-PDIP |
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Microchip Technology |
IC EEPROM 16K SPI 3MHZ WAFER
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8, 1K x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock3,872 |
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EEPROM | EEPROM | 16Kb (2K x 8, 1K x 16) | SPI | 3MHz | 2ms | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
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Cypress Semiconductor Corp |
IC FLASH 256M PARALLEL 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock7,888 |
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FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | - | 60ns | 90ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Cypress Semiconductor Corp |
IC FLASH 256M SPI 133MHZ 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (6x8)
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Package: 24-TBGA |
Stock6,252 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |
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Winbond Electronics |
IC FLASH MEMORY 64MB
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,048 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: 2.6ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock2,144 |
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SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 250MHz | - | 2.6ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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Micron Technology Inc. |
IC FLASH 512G PARALLEL 333MHZ
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 512Gb (64G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,328 |
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FLASH | FLASH - NAND | 512Gb (64G x 8) | Parallel | 333MHz | - | - | 2.5 V ~ 3.6 V | 0°C ~ 70°C (TA) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 512K PARALLEL 128TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 512Kb (32K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: 128-LQFP |
Stock2,448 |
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SRAM | SRAM - Dual Port, Synchronous | 512Kb (32K x 16) | Parallel | - | - | 7.5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
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IDT, Integrated Device Technology Inc |
IC SRAM 64K PARALLEL 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 17ns
- Access Time: 17ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
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Package: 64-LQFP |
Stock4,944 |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 17ns | 17ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
32Mb,High-Speed,Async,2Mbx16, 12
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 32Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 1.65V ~ 2.2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 32Mbit | Parallel | - | 12ns | 12 ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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Cypress Semiconductor Corp |
IC SRAM 9MBIT PAR 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mbit
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous, SDR | 9Mbit | Parallel | 100 MHz | - | 5 ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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GigaDevice Semiconductor (HK) Limited |
64MBIT, 1.65V-3.6V, SOP8 208MIL,
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 120µs, 4ms
- Access Time: 12 ns
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock2,730 |
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FLASH | FLASH - NOR (SLC) | 64Mbit | SPI - Quad I/O | 104 MHz | 120µs, 4ms | 12 ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOP |
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Infineon Technologies |
IC SRAM 16KX16 3.3V SYNC 100TQFP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
4G, 1.2V, DDR4, 512Mx8, 2400MT/s
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gbit
- Memory Interface: POD
- Clock Frequency: 1.2 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (10x14)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR4 | 4Gbit | POD | 1.2 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (10x14) |
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Micron Technology Inc. |
UMCP 2096G
- Memory Type: Non-Volatile, Volatile
- Memory Format: FLASH, RAM
- Technology: FLASH - NAND, DRAM - LPDDR4X
- Memory Size: 2Tbit (NAND), 48Gbit (LPDDR4X)
- Memory Interface: UFS2.1
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 254-BGA
- Supplier Device Package: 254-MCP
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Package: - |
Request a Quote |
|
FLASH, RAM | FLASH - NAND, DRAM - LPDDR4X | 2Tbit (NAND), 48Gbit (LPDDR4X) | UFS2.1 | 2.133 GHz | - | - | - | -25°C ~ 85°C | Surface Mount | 254-BGA | 254-MCP |
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Renesas Electronics Corporation |
M3016316 MRAM PARALLEL 16MB X16
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 16Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 484-BGA
- Supplier Device Package: 484-CABGA (23x23)
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 16Mbit | Parallel | - | 35ns | 35 ns | 2.7V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 484-BGA | 484-CABGA (23x23) |
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Cypress Semiconductor Corp |
IC SRAM 512KBIT PARALLEL
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 512Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous | 512Kbit | Parallel | - | 35ns | 35 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | - | - | - |
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Micron Technology Inc. |
IC DRAM 8GBIT PARALLEL 78FBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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