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Cypress Semiconductor Corp |
IC SRAM 18MBIT 167MHZ 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock2,608 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 167MHz | - | 3.4ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
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Package: 165-TBGA |
Stock6,608 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 12NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock5,120 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock94,392 |
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DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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STMicroelectronics |
IC FLASH 2MBIT 200NS 52PLCC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 200ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.1x19.1)
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Package: 52-LCC (J-Lead) |
Stock24,648 |
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FLASH | FLASH | 2Mb (256K x 8) | Parallel | - | - | 200ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.1x19.1) |
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Microchip Technology |
IC FLASH 1MBIT 150NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ms
- Access Time: 150ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock2,288 |
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FLASH | FLASH | 1Mb (128K x 8) | Parallel | - | 20ms | 150ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Maxim Integrated |
IC NVSRAM 256KBIT 85NS 28EDIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 85ns
- Access Time: 85ns
- Voltage - Supply: 4.75 V ~ 5.25 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 28-EDIP
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Package: 28-DIP Module (0.600", 15.24mm) |
Stock6,432 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 85ns | 85ns | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
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Microchip Technology |
IC EEPROM 256KBIT 90NS 28SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock7,840 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Microchip Technology |
IC EEPROM 1MBIT 200NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 200ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock7,552 |
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EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 200ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Microchip Technology |
IC OTP 4MBIT 90NS 40DIP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 4Mb (512K x 8, 256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Through Hole
- Package / Case: 40-DIP (0.600", 15.24mm)
- Supplier Device Package: 40-PDIP
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Package: 40-DIP (0.600", 15.24mm) |
Stock5,536 |
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EPROM | EPROM - OTP | 4Mb (512K x 8, 256K x 16) | Parallel | - | - | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Through Hole | 40-DIP (0.600", 15.24mm) | 40-PDIP |
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Cypress Semiconductor Corp |
IC FLASH 512MBIT 66MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock6,320 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O | 66MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Winbond Electronics |
IC FLASH 256MBIT 104MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock3,104 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI | 133MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Micron Technology Inc. |
IC FLASH 32MBIT 8VPDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 8ms, 2.8ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WPDFN (6x5)(MLP8)
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Package: 8-WDFN Exposed Pad |
Stock3,504 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WPDFN (6x5)(MLP8) |
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Cypress Semiconductor Corp |
F-RAM MEMORY SERIAL
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,128 |
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FRAM | FRAM (Ferroelectric RAM) | 16Kb (2K x 8) | I2C | 1MHz | - | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | - | - | - |
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Alliance Memory, Inc. |
IC SRAM 256KBIT 12NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock5,808 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 12ns | 12ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 256KBIT 20NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock33,360 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
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Micron Technology Inc. |
IC FLASH 1MX8 SLC UFDFPN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,848 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | SPI | 108MHz | 8ms, 5ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | - | - | - |
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ON Semiconductor |
IC EEPROM 1MBIT 1MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Mb (128K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 400ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock5,920 |
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EEPROM | EEPROM | 1Mb (128K x 8) | I2C | 1MHz | 5ms | 400ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Winbond Electronics |
IC FLASH 8MBIT 80MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: 8-WDFN Exposed Pad |
Stock12,156 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | SPI | 104MHz | 800µs | - | 1.65 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
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Cypress Semiconductor Corp |
IC 1 GB FLASH MEMORY
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,680 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 64M SPI 133MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8)
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: 8-WDFN Exposed Pad |
Stock16,866 |
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FLASH | FLASH - NOR | 64Mb (8M x 8) | SPI - Quad I/O, QPI | 133MHz | 800µs | - | 2.3 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock2,384 |
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DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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IDT, Integrated Device Technology Inc |
IC SRAM 512K PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 512Kb (64K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,944 |
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SRAM | SRAM - Dual Port, Asynchronous | 512Kb (64K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Winbond Electronics |
IC FLASH 32MBIT SPI/QUAD 8XSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: 6 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-XDFN Exposed Pad
- Supplier Device Package: 8-XSON (4x4)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 32Mbit | SPI - Quad I/O | 133 MHz | 3ms | 6 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-XDFN Exposed Pad | 8-XSON (4x4) |
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Winbond Electronics |
IC FLASH 16MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: 6 ns
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 16Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 3ms | 6 ns | 1.65V ~ 1.95V | -40°C ~ 125°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8GBIT PARALLEL 96LWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-LWBGA (9x13)
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Package: - |
Stock456 |
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DRAM | SDRAM - DDR3L | 8Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-LFBGA | 96-LWBGA (9x13) |
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Micron Technology Inc. |
IC FLASH 1GBIT DIE
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Gbit
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 1Gbit | - | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
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Winbond Electronics |
IC FLASH 16MBIT SPI/QUAD 8USON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-USON (4x3)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 16Mbit | SPI - Quad I/O | 133 MHz | 3ms | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-USON (4x3) |