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Micron Technology Inc. |
IC SDRAM 16GBIT 933MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR3
- Memory Size: 16Gb (256M x 64)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,512 |
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DRAM | SDRAM - Mobile LPDDR3 | 16Gb (256M x 64) | Parallel | 933MHz | - | - | 1.14 V ~ 1.95 V | -30°C ~ 85°C (TC) | - | - | - |
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ON Semiconductor |
IC EEPROM 16KBIT 200NS 24SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 200ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 24-SOIC
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Package: 24-SOIC (0.295", 7.50mm Width) |
Stock6,576 |
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EEPROM | EEPROM | 16Kb (2K x 8) | Parallel | - | 10ms | 200ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC |
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Winbond Electronics |
IC FLASH 4MBIT 100MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 4Mb (512K x 8)
- Memory Interface: SPI
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock17,040 |
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FLASH | FLASH | 4Mb (512K x 8) | SPI | 100MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 250MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock2,608 |
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SRAM | SRAM - Synchronous, QDR II | 18Mb (1M x 18) | Parallel | 250MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 12NS 32SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 32-SOJ
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Package: 32-BSOJ (0.300", 7.62mm Width) |
Stock265,812 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 32-BSOJ (0.300", 7.62mm Width) | 32-SOJ |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT 20NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock5,520 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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Micron Technology Inc. |
IC PSRAM 32MBIT 70NS 54VFBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 32Mb (2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (6x9)
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Package: 54-VFBGA |
Stock2,800 |
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PSRAM | PSRAM (Pseudo SRAM) | 32Mb (2M x 16) | Parallel | - | 70ns | 70ns | 1.7 V ~ 1.95 V | -30°C ~ 85°C (TC) | Surface Mount | 54-VFBGA | 54-VFBGA (6x9) |
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Microchip Technology |
IC OTP 1MBIT 45NS 44PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 45ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead)
- Supplier Device Package: 44-PLCC (16.59x16.59)
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Package: 44-LCC (J-Lead) |
Stock7,840 |
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EPROM | EPROM - OTP | 1Mb (64K x 16) | Parallel | - | - | 45ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 44-LCC (J-Lead) | 44-PLCC (16.59x16.59) |
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Micron Technology Inc. |
IC RLDRAM 576MBIT 800MHZ 168FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (32M x 18)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-TBGA
- Supplier Device Package: 168-BGA
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Package: 168-TBGA |
Stock3,024 |
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DRAM | DRAM | 576Mb (32M x 18) | Parallel | 800MHz | - | 8ns | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | Surface Mount | 168-TBGA | 168-BGA |
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Micron Technology Inc. |
IC SDRAM 16GBIT 800MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR3
- Memory Size: 16Gb (256M x 64)
- Memory Interface: -
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.2V
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,384 |
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DRAM | SDRAM - Mobile LPDDR3 | 16Gb (256M x 64) | - | 800MHz | - | - | 1.2V | - | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 167MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock3,984 |
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SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 167MHz | - | 3.4ns | 2.375 V ~ 2.625 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Microchip Technology |
IC EEPROM 1KBIT 10MHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock4,320 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 10MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
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Microchip Technology |
IC EEPROM 4KBIT 3MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8, 256 x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock4,672 |
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EEPROM | EEPROM | 4Kb (512 x 8, 256 x 16) | SPI | 3MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,328 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Rohm Semiconductor |
IC EEPROM 64KBIT 400KHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) |
Stock5,696 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 5ms | - | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) | 8-MSOP |
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Microchip Technology |
IC EEPROM 128KBIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock15,612 |
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EEPROM | EEPROM | 128Kb (16K x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC EEPROM 1MBIT 120NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock9,588 |
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EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 120ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Cypress Semiconductor Corp |
IC FLASH 8MBIT 70NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8, 512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock107,880 |
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FLASH | FLASH - NOR | 8Mb (1M x 8, 512K x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 8Gb (512M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (10x14)
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Package: 96-TFBGA |
Stock6,804 |
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DRAM | SDRAM - DDR3 | 8Gb (512M x 16) | Parallel | 800MHz | - | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (10x14) |
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Micron Technology Inc. |
IC DRAM 16G 1600MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 16Gb (256M x 64)
- Memory Interface: -
- Clock Frequency: 1600MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,544 |
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DRAM | SDRAM - Mobile LPDDR4 | 16Gb (256M x 64) | - | 1600MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Infineon Technologies |
IC PSRAM 64MBIT HYPERBUS 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: HyperBus
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 36ns
- Access Time: 36 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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PSRAM | PSRAM (Pseudo SRAM) | 64Mbit | HyperBus | 166 MHz | 36ns | 36 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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Winbond Electronics |
IC FLASH 128MBIT SPI 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: 6 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 128Mbit | SPI - Quad I/O | 133 MHz | 3ms | 6 ns | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IC MEMORY FLASH NOR
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 128MBIT SPI/QUAD 8SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 12µs, 2.4ms
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 128Mbit | SPI - Quad I/O | 104 MHz | 12µs, 2.4ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOP |
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Micron Technology Inc. |
IC DRAM
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 48Gbit
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 556-TFBGA
- Supplier Device Package: 556-WFBGA (12.4x12.4)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4 | 48Gbit | Parallel | 2.133 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | 556-WFBGA (12.4x12.4) |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
|
Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 512Mbit | SPI - Quad I/O, QPI | 166 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
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Infineon Technologies |
PNOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 64Mbit | CFI | - | 60ns | 70 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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