|
|
Microsemi Corporation |
MOSFET N-CH 200V 175A SP4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 175A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP4
- Package / Case: SP4
|
Package: SP4 |
Stock5,024 |
|
MOSFET (Metal Oxide) | 200V | 175A | 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | ±30V | - | 694W (Tc) | 12 mOhm @ 87.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi Corporation |
MOSFET N-CH 200V 175A SP4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 175A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP4
- Package / Case: SP4
|
Package: SP4 |
Stock3,984 |
|
MOSFET (Metal Oxide) | 200V | 175A | 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | ±30V | - | 694W (Tc) | 12 mOhm @ 87.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 103A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 103A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1122nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 30900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2272W (Tc)
- Rds On (Max) @ Id, Vgs: 114 mOhm @ 51.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock2,672 |
|
MOSFET (Metal Oxide) | 1200V | 103A | 10V | 5V @ 15mA | 1122nC @ 10V | 30900pF @ 25V | ±30V | - | 2272W (Tc) | 114 mOhm @ 51.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 116A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 116A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3290W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock3,328 |
|
MOSFET (Metal Oxide) | 1200V | 116A | 10V | 5V @ 20mA | 1100nC @ 10V | 28900pF @ 25V | ±30V | - | 3290W (Tc) | 120 mOhm @ 58A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 15A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock6,928 |
|
MOSFET (Metal Oxide) | 1200V | 15A | 10V | 5V @ 2.5mA | 260nC @ 10V | 6696pF @ 25V | ±30V | - | 357W (Tc) | 816 mOhm @ 12A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 18A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 18A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock4,656 |
|
MOSFET (Metal Oxide) | 1200V | 18A | 10V | 5V @ 2.5mA | 300nC @ 10V | 7736pF @ 25V | ±30V | - | 390W (Tc) | 672 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 34A SP4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 34A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP4
- Package / Case: SP4
|
Package: SP4 |
Stock4,480 |
|
MOSFET (Metal Oxide) | 1200V | 34A | 10V | 5V @ 5mA | 374nC @ 10V | 10300pF @ 25V | ±30V | - | 780W (Tc) | 348 mOhm @ 17A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 60A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock5,504 |
|
MOSFET (Metal Oxide) | 1200V | 60A | 10V | 5V @ 10mA | 748nC @ 10V | 20600pF @ 25V | ±30V | - | 1250W (Tc) | 175 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 15A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock5,936 |
|
MOSFET (Metal Oxide) | 1200V | 15A | 10V | 5V @ 2.5mA | 260nC @ 10V | 6696pF @ 25V | ±30V | - | 357W (Tc) | 816 mOhm @ 12A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 18A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 18A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock3,520 |
|
MOSFET (Metal Oxide) | 1200V | 18A | 10V | 5V @ 2.5mA | 300nC @ 10V | 7736pF @ 25V | ±30V | - | 390W (Tc) | 672 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 34A SP4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 34A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP4
- Package / Case: SP4
|
Package: SP4 |
Stock2,176 |
|
MOSFET (Metal Oxide) | 1200V | 34A | 10V | 5V @ 5mA | 374nC @ 10V | 10300pF @ 25V | ±30V | - | 780W (Tc) | 348 mOhm @ 17A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi Corporation |
MOSFET N-CH 1200V 60A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock3,824 |
|
MOSFET (Metal Oxide) | 1200V | 60A | 10V | 5V @ 10mA | 748nC @ 10V | 20600pF @ 25V | ±30V | - | 1250W (Tc) | 175 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi Corporation |
MOSFET N-CH 1000V 65A J3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 65A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 31600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: J3 Module
|
Package: J3 Module |
Stock3,776 |
|
MOSFET (Metal Oxide) | 1000V | 65A | 10V | 4V @ 10mA | 2000nC @ 10V | 31600pF @ 25V | ±30V | - | 1250W (Tc) | 145 mOhm @ 32.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | Module | J3 Module |
|
|
Microsemi Corporation |
MOSFET N-CH 1000V 20A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 16A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock6,592 |
|
MOSFET (Metal Oxide) | 1000V | 20A | 10V | 5V @ 2.5mA | 260nC @ 10V | 6800pF @ 25V | ±30V | - | 357W (Tc) | 480 mOhm @ 16A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 1000V 20A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 16A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock2,592 |
|
MOSFET (Metal Oxide) | 1000V | 20A | 10V | 5V @ 2.5mA | 260nC @ 10V | 6800pF @ 25V | ±30V | - | 357W (Tc) | 480 mOhm @ 16A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 1000V 40A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 657W (Tc)
- Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock7,056 |
|
MOSFET (Metal Oxide) | 1000V | 40A | 10V | 5V @ 2.5mA | 570nC @ 10V | 14800pF @ 25V | ±30V | - | 657W (Tc) | 216 mOhm @ 33A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 800V 28A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 277W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock4,736 |
|
MOSFET (Metal Oxide) | 800V | 28A | 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | ±30V | - | 277W (Tc) | 150 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 800V 28A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 277W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock5,024 |
|
MOSFET (Metal Oxide) | 800V | 28A | 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | ±30V | - | 277W (Tc) | 150 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 600V 72A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock2,448 |
|
MOSFET (Metal Oxide) | 600V | 72A | 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | ±20V | - | 416W (Tc) | 35 mOhm @ 72A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 600V 72A SP1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
|
Package: SP1 |
Stock6,912 |
|
MOSFET (Metal Oxide) | 600V | 72A | 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | ±20V | - | 416W (Tc) | 35 mOhm @ 72A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi Corporation |
MOSFET N-CH 600V 52A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 52A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock3,296 |
|
MOSFET (Metal Oxide) | 600V | 52A | 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | ±20V | - | 290W (Tc) | 45 mOhm @ 22.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
Microsemi Corporation |
MOSFET N-CH 800V 8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 225W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 [K]
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock103,464 |
|
MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 5V @ 500µA | 43nC @ 10V | 1335pF @ 25V | ±30V | - | 225W (Tc) | 1.35 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
|
|
Microsemi Corporation |
MOSFET N-CH 800V 31A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock5,616 |
|
MOSFET (Metal Oxide) | 800V | 31A (Tc) | 10V | 5V @ 2.5mA | 160nC @ 10V | 4670pF @ 25V | ±30V | - | 565W (Tc) | 240 mOhm @ 15.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
|
|
Microsemi Corporation |
MOSFET N-CH 800V 29A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 29A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock4,192 |
|
MOSFET (Metal Oxide) | 800V | 29A | 10V | 5V @ 2.5mA | 160nC @ 10V | 4670pF @ 25V | ±30V | - | 460W (Tc) | 240 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
|
|
Microsemi Corporation |
MOSFET N-CH 800V 42A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 42A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7238pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock5,088 |
|
MOSFET (Metal Oxide) | 800V | 42A | 10V | 5V @ 5mA | 285nC @ 10V | 7238pF @ 25V | ±30V | - | 595W (Tc) | 140 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
|
|
Microsemi Corporation |
MOSFET N-CH 800V 7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 225W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 [K]
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,120 |
|
MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 5V @ 500µA | 43nC @ 10V | 1335pF @ 25V | ±30V | - | 225W (Tc) | 1.5 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
|
|
Microsemi Corporation |
MOSFET N-CH 1000V 6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 225W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 [K]
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,080 |
|
MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 5V @ 1mA | 43nC @ 10V | 1410pF @ 25V | ±30V | - | 225W (Tc) | 2.5 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
|
|
Microsemi Corporation |
MOSFET N-CH 600V 55A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 55A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock5,008 |
|
MOSFET (Metal Oxide) | 600V | 55A | 10V | 4V @ 5mA | 870nC @ 10V | 14500pF @ 25V | ±30V | - | 568W (Tc) | 80 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |