Page 17 - Microsemi Corporation Products - Transistors - FETs, MOSFETs - Single

JANTX2N6770T1
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock6,176
JANTX2N6770
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock7,216
JANTX2N6768T1
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock5,168
JANTX2N6768
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock8,040
JANTX2N6766T1
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock6,272
JANTX2N6766
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock12,360
JANTX2N6764T1
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock4,480
JANTX2N6764
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock6,352
JANTX2N6762
Microsemi Corporation

MOSFET N-CH TO-204AA TO-3

Package: TO-204AA, TO-3

Stock3,504
JANTX2N6760
Microsemi Corporation

MOSFET N-CH TO-204AA TO-3

Package: TO-204AA, TO-3

Stock3,760
JANTX2N6758
Microsemi Corporation

MOSFET N-CH TO-204AA TO-3

Package: TO-204AA, TO-3

Stock10,104
JANTX2N6756
Microsemi Corporation

MOSFET N-CH TO-204AA TO-3

Package: TO-204AA, TO-3

Stock7,952
JAN2N7236U
Microsemi Corporation

MOSFET P-CH 100V 18A TO-267AB

Package: TO-267AB

Stock3,808
JAN2N7236
Microsemi Corporation

MOSFET P-CH 100V 18A TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock5,728
JAN2N7228U
Microsemi Corporation

MOSFET N-CH TO-267AB

Package: TO-267AB

Stock4,816
JAN2N7228
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock4,656
JAN2N7227U
Microsemi Corporation

MOSFET N-CH TO-267AB

Package: TO-267AB

Stock3,920
JAN2N7227
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock2,256
JAN2N7225U
Microsemi Corporation

MOSFET N-CH TO-267AB

Package: TO-267AB

Stock7,536
JAN2N7225
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock3,824

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
JANTX2N6770T1	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock6,176	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	500 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JANTX2N6770	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock7,216	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	500 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
JANTX2N6768T1	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock5,168	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	400 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-254-3, TO-254AA (Straight Leads)
JANTX2N6768	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock8,040	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	400 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
JANTX2N6766T1	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock6,272	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	90 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JANTX2N6766	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock12,360	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	90 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
JANTX2N6764T1	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock4,480	MOSFET (Metal Oxide)	100V	38A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	65 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JANTX2N6764	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock6,352	MOSFET (Metal Oxide)	100V	38A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	65 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
JANTX2N6762	Microsemi Corporation	MOSFET N-CH TO-204AA TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock3,504	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	40nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	1.8 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
JANTX2N6760	Microsemi Corporation	MOSFET N-CH TO-204AA TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 1.22 Ohm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock3,760	MOSFET (Metal Oxide)	400V	5.5A (Tc)	10V	4V @ 250µA	39nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	1.22 Ohm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
JANTX2N6758	Microsemi Corporation	MOSFET N-CH TO-204AA TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock10,104	MOSFET (Metal Oxide)	200V	9A (Tc)	10V	4V @ 250µA	39nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	490 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
JANTX2N6756	Microsemi Corporation	MOSFET N-CH TO-204AA TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock7,952	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	35nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	210 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA	TO-204AA, TO-3
JAN2N7236U	Microsemi Corporation	MOSFET P-CH 100V 18A TO-267AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock3,808	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 250µA	60nC @ 10V	-	±20V	-	4W (Ta), 125W (Tc)	220 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
JAN2N7236	Microsemi Corporation	MOSFET P-CH 100V 18A TO-254AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock5,728	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 250µA	60nC @ 10V	-	±20V	-	4W (Ta), 125W (Tc)	220 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JAN2N7228U	Microsemi Corporation	MOSFET N-CH TO-267AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock4,816	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	515 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
JAN2N7228	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock4,656	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	515 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JAN2N7227U	Microsemi Corporation	MOSFET N-CH TO-267AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock3,920	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	415 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
JAN2N7227	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock2,256	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	415 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JAN2N7225U	Microsemi Corporation	MOSFET N-CH TO-267AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock7,536	MOSFET (Metal Oxide)	200V	27.4A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	105 mOhm @ 27.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
JAN2N7225	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock3,824	MOSFET (Metal Oxide)	200V	27.4A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	105 mOhm @ 27.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JAN2N7224U	Microsemi Corporation	MOSFET N-CH TO-267AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock4,720	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	81 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
JAN2N7224	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock2,800	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	81 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
JAN2N6901	Microsemi Corporation	MOSFET N-CH 100V 1.69A TO-205AF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8.33W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.07A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock38,844	MOSFET (Metal Oxide)	100V	1.69A (Tc)	5V	2V @ 1mA	5nC @ 5V	-	±10V	-	8.33W (Tc)	1.4 Ohm @ 1.07A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
JAN2N6849U	Microsemi Corporation	MOSFET P-CH 18-LCC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock7,808	MOSFET (Metal Oxide)	100V	6.5A (Tc)	10V	4V @ 250µA	34.8nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	320 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
JAN2N6849	Microsemi Corporation	MOSFET P-CH 100V 6.5A TO-39 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock2,336	MOSFET (Metal Oxide)	100V	6.5A (Tc)	10V	4V @ 250µA	34.8nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	320 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can
JAN2N6804	Microsemi Corporation	MOSFET P-CH 100V 11A TO-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock2,512	MOSFET (Metal Oxide)	100V	11A (Tc)	10V	4V @ 250µA	29nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	360 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
JAN2N6802U	Microsemi Corporation	MOSFET N-CH 18-LCC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock2,000	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	33nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	1.6 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
JAN2N6802	Microsemi Corporation	MOSFET N-CH TO-205AF TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock5,664	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	33nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	1.6 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can