Page 15 - Microsemi Corporation Products - Transistors - FETs, MOSFETs - Single

APT53N60SC6
Microsemi Corporation

MOSFET N-CH 600V 53A D3PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,504
APT12067JLL
Microsemi Corporation

MOSFET N-CH 1200V 17A SOT227

Package: SOT-227-4, miniBLOC

Stock2,704
APT12067B2LLG
Microsemi Corporation

MOSFET N-CH 1200V 18A T-MAX

Package: TO-247-3 Variant

Stock2,976
APTM100DA18CT1G
Microsemi Corporation

MOSFET N-CH 1000V 40A SP1

Package: SP1

Stock6,864
APTC60DAM24CT1G
Microsemi Corporation

MOSFET N-CH 600V 95A SP4

Package: SP4

Stock7,744
APT58M50JCU3
Microsemi Corporation

MOSFET N-CH 500V 58A SOT227

Package: SOT-227-4, miniBLOC

Stock5,440
APT33N90JCCU3
Microsemi Corporation

MOSFET N-CH 900V 33A SOT227

Package: SOT-227-4, miniBLOC

Stock5,552
APT5014SLLG/TR
Microsemi Corporation

MOSFET N-CH 500V 35A TO-247

Package: TO-247-3

Stock7,232
APT38N60SC6
Microsemi Corporation

MOSFET N-CH 600V 38A D3PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
APT30N60SC6
Microsemi Corporation

MOSFET N-CH 600V 30A D3PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,632
APT9F100S
Microsemi Corporation

MOSFET N-CH 1000V 9A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,592
APT11F80S
Microsemi Corporation

MOSFET N-CH 800V 12A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,176
APT28F60S
Microsemi Corporation

MOSFET N-CH 600V 30A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,696
APT24F50S
Microsemi Corporation

MOSFET N-CH 500V 24A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,464
APT23F60S
Microsemi Corporation

MOSFET N-CH 600V 23A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,008
APT20F50S
Microsemi Corporation

MOSFET N-CH 500V 20A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,720
APT18F60S
Microsemi Corporation

MOSFET N-CH 600V 19A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,256
APT15F60S
Microsemi Corporation

MOSFET N-CH 600V 16A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,672
APT30N60KC6
Microsemi Corporation

MOSFET N-CH 600V 30A TO-220

Package: TO-220-3

Stock7,392
APTM50UM25SG
Microsemi Corporation

MOSFET N-CH 500V 149A J3

Package: J3 Module

Stock7,648

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APT53N60SC6	Microsemi Corporation	MOSFET N-CH 600V 53A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,504	MOSFET (Metal Oxide)	600V	53A (Tc)	10V	3.5V @ 1.72mA	154nC @ 10V	4020pF @ 25V	±20V	Super Junction	417W (Tc)	70 mOhm @ 25.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT12067JLL	Microsemi Corporation	MOSFET N-CH 1200V 17A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 17A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,704	MOSFET (Metal Oxide)	1200V	17A	10V	5V @ 2.5mA	290nC @ 10V	6200pF @ 25V	±30V	-	460W (Tc)	570 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT12067B2LLG	Microsemi Corporation	MOSFET N-CH 1200V 18A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 565W (Tc) Rds On (Max) @ Id, Vgs: 670 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock2,976	MOSFET (Metal Oxide)	1200V	18A (Tc)	10V	5V @ 2.5mA	150nC @ 10V	4420pF @ 25V	±30V	-	565W (Tc)	670 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
APTM100DA18CT1G	Microsemi Corporation	MOSFET N-CH 1000V 40A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 657W (Tc) Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock6,864	MOSFET (Metal Oxide)	1000V	40A	10V	5V @ 2.5mA	570nC @ 10V	14800pF @ 25V	±30V	-	657W (Tc)	216 mOhm @ 33A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTC60DAM24CT1G	Microsemi Corporation	MOSFET N-CH 600V 95A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock7,744	MOSFET (Metal Oxide)	600V	95A	10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	±20V	-	462W (Tc)	24 mOhm @ 47.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APT58M50JCU3	Microsemi Corporation	MOSFET N-CH 500V 58A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 58A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,440	MOSFET (Metal Oxide)	500V	58A	10V	5V @ 2.5mA	340nC @ 10V	10800pF @ 25V	±30V	-	543W (Tc)	65 mOhm @ 42A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT33N90JCCU3	Microsemi Corporation	MOSFET N-CH 900V 33A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,552	MOSFET (Metal Oxide)	900V	33A	10V	3.5V @ 3mA	270nC @ 10V	6800pF @ 100V	±20V	Super Junction	290W (Tc)	120 mOhm @ 26A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT5014SLLG/TR	Microsemi Corporation	MOSFET N-CH 500V 35A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3261pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,232	MOSFET (Metal Oxide)	500V	35A (Tc)	10V	5V @ 1mA	72nC @ 10V	3261pF @ 25V	±30V	-	403W (Tc)	140 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
APT38N60SC6	Microsemi Corporation	MOSFET N-CH 600V 38A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	600V	38A (Tc)	10V	3.5V @ 1.2mA	112nC @ 10V	2826pF @ 25V	±20V	-	278W (Tc)	99 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT30N60SC6	Microsemi Corporation	MOSFET N-CH 600V 30A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,632	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	3.5V @ 960µA	88nC @ 10V	2267pF @ 25V	±20V	-	219W (Tc)	125 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT9F100S	Microsemi Corporation	MOSFET N-CH 1000V 9A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2606pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 337W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,592	MOSFET (Metal Oxide)	1000V	9A (Tc)	10V	5V @ 1mA	80nC @ 10V	2606pF @ 25V	±30V	-	337W (Tc)	1.6 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT11F80S	Microsemi Corporation	MOSFET N-CH 800V 12A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2471pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 337W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,176	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 1mA	80nC @ 10V	2471pF @ 25V	±30V	-	337W (Tc)	900 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT28F60S	Microsemi Corporation	MOSFET N-CH 600V 30A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5575pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,696	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 1mA	140nC @ 10V	5575pF @ 25V	±30V	-	520W (Tc)	220 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT24F50S	Microsemi Corporation	MOSFET N-CH 500V 24A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,464	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	5V @ 1mA	90nC @ 10V	3630pF @ 25V	±30V	-	335W (Tc)	240 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT23F60S	Microsemi Corporation	MOSFET N-CH 600V 23A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 415W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,008	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 1mA	110nC @ 10V	4415pF @ 25V	±30V	-	415W (Tc)	290 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT20F50S	Microsemi Corporation	MOSFET N-CH 500V 20A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,720	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 500µA	75nC @ 10V	2950pF @ 25V	±30V	-	290W (Tc)	300 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT18F60S	Microsemi Corporation	MOSFET N-CH 600V 19A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,256	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	5V @ 1mA	90nC @ 10V	3550pF @ 25V	±30V	-	335W (Tc)	370 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT15F60S	Microsemi Corporation	MOSFET N-CH 600V 16A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,672	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	5V @ 500µA	72nC @ 10V	2882pF @ 25V	±30V	-	290W (Tc)	430 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT30N60KC6	Microsemi Corporation	MOSFET N-CH 600V 30A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 [K] Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	600V	30A (Tc)	-	3.5V @ 960µA	88nC @ 10V	2267pF @ 25V	-	-	219W (Tc)	125 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 [K]	TO-220-3
APTM50UM25SG	Microsemi Corporation	MOSFET N-CH 500V 149A J3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 149A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	Package: J3 Module	Stock7,648	MOSFET (Metal Oxide)	500V	149A	10V	5V @ 10mA	364nC @ 10V	17500pF @ 25V	±30V	-	1250W (Tc)	25 mOhm @ 74.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	J3 Module
APTM50UM19SG	Microsemi Corporation	MOSFET N-CH 500V 163A J3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1136W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 81.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	Package: J3 Module	Stock7,344	MOSFET (Metal Oxide)	500V	163A	10V	5V @ 10mA	492nC @ 10V	22400pF @ 25V	±30V	-	1136W (Tc)	19 mOhm @ 81.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	J3 Module
APTM50SKM38TG	Microsemi Corporation	MOSFET N-CH 500V 90A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock5,360	MOSFET (Metal Oxide)	500V	90A	10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	±30V	-	694W (Tc)	45 mOhm @ 45A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM50SKM35TG	Microsemi Corporation	MOSFET N-CH 500V 99A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 781W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock6,288	MOSFET (Metal Oxide)	500V	99A	10V	5V @ 5mA	280nC @ 10V	14000pF @ 25V	±30V	-	781W (Tc)	39 mOhm @ 49.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM50DAM38TG	Microsemi Corporation	MOSFET N-CH 500V 90A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock7,632	MOSFET (Metal Oxide)	500V	90A	10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	±30V	-	694W (Tc)	45 mOhm @ 45A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM50DAM38CTG	Microsemi Corporation	MOSFET N-CH 500V 90A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock7,744	MOSFET (Metal Oxide)	500V	90A	10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	±30V	-	694W (Tc)	45 mOhm @ 45A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM50DAM35TG	Microsemi Corporation	MOSFET N-CH 500V 99A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 781W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock5,632	MOSFET (Metal Oxide)	500V	99A	10V	5V @ 5mA	280nC @ 10V	14000pF @ 25V	±30V	-	781W (Tc)	39 mOhm @ 49.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM20UM09SG	Microsemi Corporation	MOSFET N-CH 200V 195A J3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 195A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 217nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 74.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	Package: J3 Module	Stock5,840	MOSFET (Metal Oxide)	200V	195A	10V	5V @ 4mA	217nC @ 10V	12300pF @ 25V	±30V	-	780W (Tc)	9 mOhm @ 74.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	J3 Module
APTM20UM05SG	Microsemi Corporation	MOSFET N-CH 200V 317A J3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1136W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	Package: J3 Module	Stock5,936	MOSFET (Metal Oxide)	200V	317A	10V	5V @ 10mA	448nC @ 10V	27400pF @ 25V	±30V	-	1136W (Tc)	5 mOhm @ 158.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	J3 Module