Page 47 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD20P06L-001
ON Semiconductor

MOSFET P-CH 60V 15.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,120
NTD20N06L-001
ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,056
NTD15N06L-001
ON Semiconductor

MOSFET N-CH 60V 15A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock17,712
NTD20N06-001
ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,000
NTD18N06L-001
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,848
NTD18N06-001
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,592
NTD20N03L27-001
ON Semiconductor

MOSFET N-CH 30V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,432
NTD24N06-001
ON Semiconductor

MOSFET N-CH 60V 24A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,944
NTD25P03L1
ON Semiconductor

MOSFET P-CH 30V 25A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,680
NTP75N06L
ON Semiconductor

MOSFET N-CH 60V 75A TO-220AB

Package: TO-220-3

Stock2,832
NTP75N03L09
ON Semiconductor

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock402,840
NTP60N06L
ON Semiconductor

MOSFET N-CH 60V 60A TO220AB

Package: TO-220-3

Stock2,816
NTP75N03-006
ON Semiconductor

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock390,000
NTP52N10
ON Semiconductor

MOSFET N-CH 100V 60A TO220AB

Package: TO-220-3

Stock450,492
NTP45N06L
ON Semiconductor

MOSFET N-CH 60V 45A TO220AB

Package: TO-220-3

Stock450,420
NTP45N06
ON Semiconductor

MOSFET N-CH 60V 45A TO220AB

Package: TO-220-3

Stock391,440
NTP60N06
ON Semiconductor

MOSFET N-CH 60V 60A TO220AB

Package: TO-220-3

Stock390,000
NTP4302
ON Semiconductor

MOSFET N-CH 30V 74A TO220AB

Package: TO-220-3

Stock6,576
MTP3055V
ON Semiconductor

MOSFET N-CH 60V 12A TO-220AB

Package: TO-220-3

Stock3,440
MTP3055VL
ON Semiconductor

MOSFET N-CH 60V 12A TO-220AB

Package: TO-220-3

Stock186,036

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD20P06L-001	ON Semiconductor	MOSFET P-CH 60V 15.5A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,120	MOSFET (Metal Oxide)	60V	15.5A (Ta)	5V	2V @ 250µA	26nC @ 5V	1190pF @ 25V	±20V	-	65W (Tc)	150 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD20N06L-001	ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,056	MOSFET (Metal Oxide)	60V	20A (Ta)	5V	2V @ 250µA	32nC @ 5V	990pF @ 25V	±15V	-	1.36W (Ta), 60W (Tj)	48 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD15N06L-001	ON Semiconductor	MOSFET N-CH 60V 15A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock17,712	MOSFET (Metal Oxide)	60V	15A (Ta)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±15V	-	1.5W (Ta), 48W (Tj)	100 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD20N06-001	ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,000	MOSFET (Metal Oxide)	60V	20A (Ta)	10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	±20V	-	1.88W (Ta), 60W (Tj)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD18N06L-001	ON Semiconductor	MOSFET N-CH 60V 18A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,848	MOSFET (Metal Oxide)	60V	18A (Ta)	5V	2V @ 250µA	22nC @ 5V	675pF @ 25V	±15V	-	2.1W (Ta), 55W (Tj)	65 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD18N06-001	ON Semiconductor	MOSFET N-CH 60V 18A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,592	MOSFET (Metal Oxide)	60V	18A (Ta)	10V	4V @ 250µA	30nC @ 10V	710pF @ 25V	±20V	-	2.1W (Ta), 55W (Tj)	60 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD20N03L27-001	ON Semiconductor	MOSFET N-CH 30V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,432	MOSFET (Metal Oxide)	30V	20A (Ta)	4V, 5V	2V @ 250µA	18.9nC @ 10V	1260pF @ 25V	±20V	-	1.75W (Ta), 74W (Tc)	27 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD24N06-001	ON Semiconductor	MOSFET N-CH 60V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,944	MOSFET (Metal Oxide)	60V	24A (Ta)	10V	4V @ 250µA	48nC @ 10V	1200pF @ 25V	±20V	-	1.36W (Ta), 62.5W (Tj)	42 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD25P03L1	ON Semiconductor	MOSFET P-CH 30V 25A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,680	MOSFET (Metal Oxide)	30V	25A (Ta)	4V, 5V	2V @ 250µA	20nC @ 5V	1260pF @ 25V	±15V	-	75W (Tj)	80 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTP75N06L	ON Semiconductor	MOSFET N-CH 60V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Rds On (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,832	MOSFET (Metal Oxide)	60V	75A (Ta)	5V	2V @ 250µA	92nC @ 5V	4370pF @ 25V	±20V	-	2.4W (Ta), 214W (Tj)	11 mOhm @ 37.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP75N03L09	ON Semiconductor	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 37.5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock402,840	MOSFET (Metal Oxide)	30V	75A (Tc)	5V	2V @ 250µA	75nC @ 5V	5635pF @ 25V	±20V	-	2.5W (Ta), 125W (Tc)	8 mOhm @ 37.5A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP60N06L	ON Semiconductor	MOSFET N-CH 60V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,816	MOSFET (Metal Oxide)	60V	60A (Ta)	5V	2V @ 250µA	65nC @ 5V	3075pF @ 25V	±15V	-	2.4W (Ta), 150W (Tj)	16 mOhm @ 30A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP75N03-006	ON Semiconductor	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	2V @ 250µA	75nC @ 5V	5635pF @ 25V	±20V	-	2.5W (Ta), 125W (Tc)	6.5 mOhm @ 37.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP52N10	ON Semiconductor	MOSFET N-CH 100V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock450,492	MOSFET (Metal Oxide)	100V	60A (Ta)	10V	4V @ 250µA	135nC @ 10V	3150pF @ 25V	±20V	-	214W (Tc)	30 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP45N06L	ON Semiconductor	MOSFET N-CH 60V 45A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock450,420	MOSFET (Metal Oxide)	60V	45A (Ta)	5V	2V @ 250µA	32nC @ 5V	1700pF @ 25V	±15V	-	2.4W (Ta), 125W (Tj)	28 mOhm @ 22.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP45N06	ON Semiconductor	MOSFET N-CH 60V 45A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock391,440	MOSFET (Metal Oxide)	60V	45A (Ta)	10V	4V @ 250µA	46nC @ 10V	1725pF @ 25V	±20V	-	2.4W (Ta), 125W (Tj)	26 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP60N06	ON Semiconductor	MOSFET N-CH 60V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	60V	60A (Ta)	10V	4V @ 250µA	81nC @ 10V	3220pF @ 25V	±20V	-	2.4W (Ta), 150W (Tj)	14 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP4302	ON Semiconductor	MOSFET N-CH 30V 74A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,576	MOSFET (Metal Oxide)	30V	74A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 4.5V	2400pF @ 24V	±20V	-	80W (Tc)	9.3 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP3055V	ON Semiconductor	MOSFET N-CH 60V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,440	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	17nC @ 10V	500pF @ 25V	±20V	-	48W (Tc)	150 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP3055VL	ON Semiconductor	MOSFET N-CH 60V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock186,036	MOSFET (Metal Oxide)	60V	12A (Tc)	5V	4V @ 250µA	10nC @ 5V	570pF @ 25V	±15V	-	48W (Tc)	180 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTY100N10E	ON Semiconductor	MOSFET N-CH 100V 100A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock90,072	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 250µA	378nC @ 10V	10640pF @ 25V	±20V	-	300W (Tc)	11 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
NTP30N06	ON Semiconductor	MOSFET N-CH 60V 27A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,472	MOSFET (Metal Oxide)	60V	27A (Ta)	10V	4V @ 250µA	46nC @ 10V	1200pF @ 25V	±20V	-	88.2W (Tc)	42 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD85N02R-001	ON Semiconductor	MOSFET N-CH 24V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock107,100	MOSFET (Metal Oxide)	24V	12A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	17.7nC @ 5V	2050pF @ 20V	±20V	-	1.25W (Ta), 78.1W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD60N03-001	ON Semiconductor	MOSFET N-CH 28V 60A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,864	MOSFET (Metal Oxide)	28V	60A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 4.5V	2150pF @ 24V	±20V	-	75W (Tc)	7.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTP30N06L	ON Semiconductor	MOSFET N-CH 60V 30A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 15A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock522,072	MOSFET (Metal Oxide)	60V	30A (Ta)	5V	2V @ 250µA	32nC @ 5V	1150pF @ 25V	±15V	-	88.2W (Tc)	46 mOhm @ 15A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP13N10	ON Semiconductor	MOSFET N-CH 100V 13A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64.7W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,200	MOSFET (Metal Oxide)	100V	13A (Ta)	10V	4V @ 250µA	20nC @ 10V	550pF @ 25V	±20V	-	64.7W (Tc)	165 mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP18N06	ON Semiconductor	MOSFET N-CH 60V 15A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,180	MOSFET (Metal Oxide)	60V	15A (Tc)	10V	4V @ 250µA	22nC @ 10V	450pF @ 25V	±20V	-	48.4W (Tc)	90 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP18N06L	ON Semiconductor	MOSFET N-CH 60V 15A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,132	MOSFET (Metal Oxide)	60V	15A (Tc)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±10V	-	48.4W (Tc)	100 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3