Page 50 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

BS170RLRPG
ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,672
BS170RLRP
ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7,648
BS170G
ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock24,288
BS108G
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,176
BS107G
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock4,544
BS107ARL1G
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock537,288
BS107ARL1
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,360
2N7002LT3
ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,912
2N7000RLRPG
ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,904
2N7000RLRMG
ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,112
2N7000G
ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock40,728
MTD6N20ET4G
ON Semiconductor

MOSFET N-CH 200V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock795,132
MTD5P06VT4G
ON Semiconductor

MOSFET P-CH 60V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock289,356
MMBF2202PT1G
ON Semiconductor

MOSFET P-CH 20V 0.3A SOT323

Package: SC-70, SOT-323

Stock3,167,004
NTP75N03RG
ON Semiconductor

MOSFET N-CH 25V 9.7A TO220AB

Package: TO-220-3

Stock390,000
NTP85N03RG
ON Semiconductor

MOSFET N-CH 28V 85A TO220AB

Package: TO-220-3

Stock3,344
NTP75N03L09G
ON Semiconductor

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock390,960
NTP60N06LG
ON Semiconductor

MOSFET N-CH 60V 60A TO220AB

Package: TO-220-3

Stock390,000
NTP60N06G
ON Semiconductor

MOSFET N-CH 60V 60A TO220AB

Package: TO-220-3

Stock450,840
NTP52N10G
ON Semiconductor

MOSFET N-CH 100V 60A TO220AB

Package: TO-220-3

Stock390,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BS170RLRPG	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,672	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BS170RLRP	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7,648	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BS170G	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock24,288	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS108G	ON Semiconductor	MOSFET N-CH 200V 0.25A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 100mA, 2.8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,176	MOSFET (Metal Oxide)	200V	250mA (Ta)	2V, 2.8V	1.5V @ 1mA	-	150pF @ 25V	±20V	-	350mW (Ta)	8 Ohm @ 100mA, 2.8V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS107G	ON Semiconductor	MOSFET N-CH 200V 0.25A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock4,544	MOSFET (Metal Oxide)	200V	250mA (Ta)	2.6V, 10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS107ARL1G	ON Semiconductor	MOSFET N-CH 200V 0.25A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock537,288	MOSFET (Metal Oxide)	200V	250mA (Ta)	10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Ta)	6.4 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BS107ARL1	ON Semiconductor	MOSFET N-CH 200V 0.25A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,360	MOSFET (Metal Oxide)	200V	250mA (Ta)	10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Ta)	6.4 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7002LT3	ON Semiconductor	MOSFET N-CH 60V 0.115A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,912	MOSFET (Metal Oxide)	60V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	225mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2N7000RLRPG	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,904	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7000RLRMG	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,112	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7000G	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock40,728	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
MTD6N20ET4G	ON Semiconductor	MOSFET N-CH 200V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock795,132	MOSFET (Metal Oxide)	200V	6A (Tc)	10V	4V @ 250µA	21nC @ 10V	480pF @ 25V	±20V	-	1.75W (Ta), 50W (Tc)	700 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
MTD5P06VT4G	ON Semiconductor	MOSFET P-CH 60V 5A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock289,356	MOSFET (Metal Oxide)	60V	5A (Tc)	10V	4V @ 250µA	20nC @ 10V	510pF @ 25V	±15V	-	2.1W (Ta), 40W (Tc)	450 mOhm @ 2.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
MMBF2202PT1G	ON Semiconductor	MOSFET P-CH 20V 0.3A SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,167,004	MOSFET (Metal Oxide)	20V	300mA (Ta)	4.5V, 10V	2.4V @ 250µA	2.7nC @ 10V	50pF @ 5V	±20V	-	150mW (Ta)	2.2 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
NTP75N03RG	ON Semiconductor	MOSFET N-CH 25V 9.7A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	25V	9.7A (Ta)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.25W (Ta), 74.4W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP85N03RG	ON Semiconductor	MOSFET N-CH 28V 85A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,344	MOSFET (Metal Oxide)	28V	85A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2150pF @ 24V	±20V	-	80W (Tc)	6.8 mOhm @ 40A, 10V	-	Through Hole	TO-220AB	TO-220-3
NTP75N03L09G	ON Semiconductor	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 37.5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,960	MOSFET (Metal Oxide)	30V	75A (Tc)	5V	2V @ 250µA	75nC @ 5V	5635pF @ 25V	±20V	-	2.5W (Ta), 125W (Tc)	8 mOhm @ 37.5A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP60N06LG	ON Semiconductor	MOSFET N-CH 60V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	60V	60A (Ta)	5V	2V @ 250µA	65nC @ 5V	3075pF @ 25V	±15V	-	2.4W (Ta), 150W (Tj)	16 mOhm @ 30A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP60N06G	ON Semiconductor	MOSFET N-CH 60V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock450,840	MOSFET (Metal Oxide)	60V	60A (Ta)	10V	4V @ 250µA	81nC @ 10V	3220pF @ 25V	±20V	-	2.4W (Ta), 150W (Tj)	14 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP52N10G	ON Semiconductor	MOSFET N-CH 100V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	100V	60A (Ta)	10V	4V @ 250µA	135nC @ 10V	3150pF @ 25V	±20V	-	214W (Tc)	30 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP45N06LG	ON Semiconductor	MOSFET N-CH 60V 45A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock459,648	MOSFET (Metal Oxide)	60V	45A (Ta)	5V	2V @ 250µA	32nC @ 5V	1700pF @ 25V	±15V	-	2.4W (Ta), 125W (Tj)	28 mOhm @ 22.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP45N06G	ON Semiconductor	MOSFET N-CH 60V 45A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock450,180	MOSFET (Metal Oxide)	60V	45A (Ta)	10V	4V @ 250µA	46nC @ 10V	1725pF @ 25V	±20V	-	2.4W (Ta), 125W (Tj)	26 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP4302G	ON Semiconductor	MOSFET N-CH 30V 74A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,096	MOSFET (Metal Oxide)	30V	74A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 4.5V	2400pF @ 24V	±20V	-	80W (Tc)	9.3 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP30N20G	ON Semiconductor	MOSFET N-CH 200V 30A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,048	MOSFET (Metal Oxide)	200V	30A (Ta)	10V	4V @ 250µA	100nC @ 10V	2335pF @ 25V	±30V	-	214W (Tc)	81 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP30N06LG	ON Semiconductor	MOSFET N-CH 60V 30A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 15A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock450,096	MOSFET (Metal Oxide)	60V	30A (Ta)	5V	2V @ 250µA	32nC @ 5V	1150pF @ 25V	±15V	-	88.2W (Tc)	46 mOhm @ 15A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP27N06G	ON Semiconductor	MOSFET N-CH 60V 27A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,864	MOSFET (Metal Oxide)	60V	27A (Ta)	10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	±20V	-	88.2W (Tc)	46 mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP18N06LG	ON Semiconductor	MOSFET N-CH 60V 15A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock451,692	MOSFET (Metal Oxide)	60V	15A (Tc)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±10V	-	48.4W (Tc)	100 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP18N06G	ON Semiconductor	MOSFET N-CH 60V 15A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock393,204	MOSFET (Metal Oxide)	60V	15A (Tc)	10V	4V @ 250µA	22nC @ 10V	450pF @ 25V	±20V	-	48.4W (Tc)	90 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3