Page 48 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD80N02-1G
ON Semiconductor

MOSFET N-CH 24V 80A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock48,708
NTD70N03R-1G
ON Semiconductor

MOSFET N-CH 25V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock347,220
NTD40N03R-1G
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock72,960
NTD23N03R-1G
ON Semiconductor

MOSFET N-CH 25V 3.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,288
NTD14N03R-1G
ON Semiconductor

MOSFET N-CH 25V 2.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,184
NTB85N03T4G
ON Semiconductor

MOSFET N-CH 28V 85A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,400
NTB75N03RG
ON Semiconductor

MOSFET N-CH 25V 9.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,952
NTB65N02RT4G
ON Semiconductor

MOSFET N-CH 25V 7.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock38,724
NTB125N02RT4G
ON Semiconductor

MOSFET N-CH 24V 15.9A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock442,800
MTW32N20EG
ON Semiconductor

MOSFET N-CH 200V 32A TO247

Package: TO-247-3

Stock6,128
MTP50P03HDLG
ON Semiconductor

MOSFET P-CH 30V 50A TO220AB

Package: TO-220-3

Stock438,000
MTP2P50EG
ON Semiconductor

MOSFET P-CH 500V 2A TO220AB

Package: TO-220-3

Stock59,880
MTP23P06VG
ON Semiconductor

MOSFET P-CH 60V 23A TO220AB

Package: TO-220-3

Stock459,372
MTP12P10G
ON Semiconductor

MOSFET P-CH 100V 12A TO220AB

Package: TO-220-3

Stock450,048
MTP10N10ELG
ON Semiconductor

MOSFET N-CH 100V 10A TO220AB

Package: TO-220-3

Stock390,000
MMFT960T1G
ON Semiconductor

MOSFET N-CH 60V 300MA SOT223

Package: TO-261-4, TO-261AA

Stock791,472
BS107AG
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,232
BS170RLRAG
ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock107,484
2N7000RLRAG
ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock206,172
NIF9N05CLT1
ON Semiconductor

MOSFET N-CH 52V 2.6A SOT223

Package: TO-261-4, TO-261AA

Stock7,184

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD80N02-1G	ON Semiconductor	MOSFET N-CH 24V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock48,708	MOSFET (Metal Oxide)	24V	80A (Tc)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	2600pF @ 20V	±20V	-	75W (Tc)	5.8 mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD70N03R-1G	ON Semiconductor	MOSFET N-CH 25V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock347,220	MOSFET (Metal Oxide)	25V	10A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.36W (Ta), 62.5W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD40N03R-1G	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock72,960	MOSFET (Metal Oxide)	25V	7.8A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	5.78nC @ 4.5V	584pF @ 20V	±20V	-	1.5W (Ta), 50W (Tc)	16.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD23N03R-1G	ON Semiconductor	MOSFET N-CH 25V 3.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,288	MOSFET (Metal Oxide)	25V	3.8A (Ta), 17.1A (Tc)	4V, 5V	2V @ 250µA	3.76nC @ 4.5V	225pF @ 20V	±20V	-	1.14W (Ta), 22.3W (Tc)	45 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD14N03R-1G	ON Semiconductor	MOSFET N-CH 25V 2.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,184	MOSFET (Metal Oxide)	25V	2.5A (Ta)	4.5V, 10V	2V @ 250µA	1.8nC @ 5V	115pF @ 20V	±20V	-	1.04W (Ta), 20.8W (Tc)	95 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTB85N03T4G	ON Semiconductor	MOSFET N-CH 28V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,400	MOSFET (Metal Oxide)	28V	85A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2150pF @ 24V	±20V	-	80W (Tc)	6.8 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N03RG	ON Semiconductor	MOSFET N-CH 25V 9.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,952	MOSFET (Metal Oxide)	25V	9.7A (Ta), 75A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 10V	1333pF @ 20V	±20V	-	1.25W (Ta), 74.4W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB65N02RT4G	ON Semiconductor	MOSFET N-CH 25V 7.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock38,724	MOSFET (Metal Oxide)	25V	7.6A (Tc)	4.5V, 10V	2V @ 250µA	9.5nC @ 4.5V	1330pF @ 20V	±20V	-	1.04W (Ta), 62.5W (Tc)	8.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB125N02RT4G	ON Semiconductor	MOSFET N-CH 24V 15.9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock442,800	MOSFET (Metal Oxide)	24V	95A (Ta), 120.5A (Tc)	4.5V, 10V	2V @ 250µA	28nC @ 4.5V	3440pF @ 20V	±20V	-	1.98W (Ta), 113.6W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MTW32N20EG	ON Semiconductor	MOSFET N-CH 200V 32A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,128	MOSFET (Metal Oxide)	200V	32A (Tc)	10V	4V @ 250µA	120nC @ 10V	5000pF @ 25V	±20V	-	180W (Tc)	75 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
MTP50P03HDLG	ON Semiconductor	MOSFET P-CH 30V 50A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock438,000	MOSFET (Metal Oxide)	30V	50A (Tc)	5V	2V @ 250µA	100nC @ 5V	4900pF @ 25V	±15V	-	125W (Tc)	25 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP2P50EG	ON Semiconductor	MOSFET P-CH 500V 2A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock59,880	MOSFET (Metal Oxide)	500V	2A (Tc)	10V	4V @ 250µA	27nC @ 10V	1183pF @ 25V	±20V	-	75W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP23P06VG	ON Semiconductor	MOSFET P-CH 60V 23A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock459,372	MOSFET (Metal Oxide)	60V	23A (Tc)	10V	4V @ 250µA	50nC @ 10V	1620pF @ 25V	±15V	-	90W (Tc)	120 mOhm @ 11.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP12P10G	ON Semiconductor	MOSFET P-CH 100V 12A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock450,048	MOSFET (Metal Oxide)	100V	12A (Tc)	10V	4.5V @ 1mA	50nC @ 10V	920pF @ 25V	±20V	-	75W (Tc)	300 mOhm @ 6A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MTP10N10ELG	ON Semiconductor	MOSFET N-CH 100V 10A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	100V	10A (Tc)	5V	2V @ 250µA	15nC @ 5V	1040pF @ 25V	±15V	-	1.75W (Ta), 40W (Tc)	220 mOhm @ 5A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MMFT960T1G	ON Semiconductor	MOSFET N-CH 60V 300MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock791,472	MOSFET (Metal Oxide)	60V	300mA (Tc)	10V	3.5V @ 1mA	3.2nC @ 10V	65pF @ 25V	±30V	-	800mW (Ta)	1.7 Ohm @ 1A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BS107AG	ON Semiconductor	MOSFET N-CH 200V 0.25A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,232	MOSFET (Metal Oxide)	200V	250mA (Ta)	10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Ta)	6.4 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS170RLRAG	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock107,484	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7000RLRAG	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock206,172	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	60pF @ 25V	±20V	-	350mW (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
NIF9N05CLT1	ON Semiconductor	MOSFET N-CH 52V 2.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 52V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.69W (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,184	MOSFET (Metal Oxide)	52V	2.6A (Ta)	3V, 10V	2.5V @ 100µA	7nC @ 4.5V	250pF @ 35V	±15V	-	1.69W (Ta)	125 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTMS4700NR2	ON Semiconductor	MOSFET N-CH 30V 8.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,128	MOSFET (Metal Oxide)	30V	8.6A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 4.5V	1600pF @ 24V	±20V	-	860mW (Ta)	7.2 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMS4503NR2	ON Semiconductor	MOSFET N-CH 28V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,768	MOSFET (Metal Oxide)	28V	9A (Ta)	4.5V, 10V	2V @ 250µA	23nC @ 4.5V	2400pF @ 16V	±20V	-	930mW (Ta)	8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTHS4501NT1G	ON Semiconductor	MOSFET N-CH 30V 4.9A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock180,588	MOSFET (Metal Oxide)	30V	4.9A (Ta)	4.5V, 10V	2V @ 250µA	9.1nC @ 10V	462pF @ 24V	±20V	-	1.3W (Ta)	38 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTHS4111PT1G	ON Semiconductor	MOSFET P-CH 30V 3.3A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,000	MOSFET (Metal Oxide)	30V	3.3A (Ta)	4.5V, 10V	3V @ 250µA	28nC @ 10V	1500pF @ 24V	±20V	-	700mW (Ta)	45 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTTD4401FR2	ON Semiconductor	MOSFET P-CH 20V 2.4A 8MICRO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Vgs (Max): ±10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 780mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock11,280	MOSFET (Metal Oxide)	20V	2.4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	18nC @ 4.5V	750pF @ 16V	±10V	Schottky Diode (Isolated)	780mW (Ta)	90 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
NTMS4404NR2	ON Semiconductor	MOSFET N-CH 30V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,208	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	3V @ 250µA	70nC @ 10V	2500pF @ 24V	±20V	-	830mW (Ta)	11.5 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTD14N03R	ON Semiconductor	MOSFET N-CH 25V 2.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock154,092	MOSFET (Metal Oxide)	25V	2.5A (Ta)	4.5V, 10V	2V @ 250µA	1.8nC @ 5V	115pF @ 20V	±20V	-	1.04W (Ta), 20.8W (Tc)	95 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD15N06-001	ON Semiconductor	MOSFET N-CH 60V 15A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,280	MOSFET (Metal Oxide)	60V	15A (Ta)	10V	4V @ 250µA	20nC @ 10V	450pF @ 25V	±20V	-	1.5W (Ta), 48W (Tj)	90 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA