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Renesas Electronics America |
MOSFET N-CH 450V 22A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock3,536 |
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MOSFET (Metal Oxide) | 450V | 22A (Ta) | 10V | - | 46nC @ 10V | 1800pF @ 25V | ±30V | - | 150W (Tc) | 300 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 450V 14A LDPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 510 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-LDPAK
- Package / Case: SC-83
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Package: SC-83 |
Stock4,240 |
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MOSFET (Metal Oxide) | 450V | 14A (Ta) | 10V | - | 29nC @ 10V | 1100pF @ 25V | ±30V | - | 100W (Tc) | 510 mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 400V 43A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 21.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock7,648 |
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MOSFET (Metal Oxide) | 400V | 43A (Ta) | 10V | - | 99nC @ 10V | 4100pF @ 25V | ±30V | - | 200W (Tc) | 100 mOhm @ 21.5A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 400V 17A LDPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-LDPAK
- Package / Case: SC-83
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Package: SC-83 |
Stock3,168 |
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MOSFET (Metal Oxide) | 400V | 17A (Ta) | 10V | - | 38nC @ 10V | 1450pF @ 25V | ±30V | - | 100W (Tc) | 300 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 400V 7.6A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FL
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,208 |
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MOSFET (Metal Oxide) | 400V | 7.6A (Ta) | 10V | - | 24.5nC @ 10V | 850pF @ 25V | ±30V | - | 32W (Tc) | 550 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 400V 8A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FL
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,088 |
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MOSFET (Metal Oxide) | 400V | 8A (Ta) | 10V | - | 20nC @ 10V | 620pF @ 25V | ±30V | - | 29W (Tc) | 800 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 400V 8A MP3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,008 |
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MOSFET (Metal Oxide) | 400V | 8A (Ta) | 10V | - | 20nC @ 10V | 620pF @ 25V | ±30V | - | 65W (Tc) | 800 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 400V 3A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 100V
- Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FL
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,104 |
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MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | - | 6nC @ 100V | 165pF @ 25V | ±30V | - | 20W (Tc) | 2.9 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 250V 17A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 128 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock30,000 |
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MOSFET (Metal Oxide) | 250V | 17A (Ta) | 10V | - | 20nC @ 10V | 1250pF @ 25V | ±30V | - | 30W (Tc) | 128 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 250V 17A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 104 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock11,172 |
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MOSFET (Metal Oxide) | 250V | 17A (Ta) | 10V | - | 39nC @ 10V | 2400pF @ 25V | ±30V | - | 30W (Tc) | 104 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 250V 65A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 32.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock3,936 |
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MOSFET (Metal Oxide) | 250V | 65A (Ta) | 10V | - | 120nC @ 10V | 4900pF @ 25V | ±30V | - | 200W (Tc) | 34 mOhm @ 32.5A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 200V 20A WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock14,388 |
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MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | - | 19nC @ 10V | 1250pF @ 25V | ±30V | - | 30W (Tc) | 85 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 200V 40A TO3PFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PFM
- Package / Case: TO-3PFM, SC-93-3
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Package: TO-3PFM, SC-93-3 |
Stock3,328 |
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MOSFET (Metal Oxide) | 200V | 40A (Ta) | 10V | - | 72nC @ 10V | 2900pF @ 25V | ±30V | - | 60W (Tc) | 36 mOhm @ 20A, 10V | - | Through Hole | TO-3PFM | TO-3PFM, SC-93-3 |
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Renesas Electronics America |
MOSFET N-CH 200V 40A LDPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-LDPAK
- Package / Case: SC-83
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Package: SC-83 |
Stock5,936 |
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MOSFET (Metal Oxide) | 200V | 40A (Ta) | 10V | - | 43nC @ 10V | 1800pF @ 25V | ±30V | - | 100W (Tc) | 59 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 60V 40A WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-WFDFN Exposed Pad
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Package: 8-WFDFN Exposed Pad |
Stock3,360 |
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MOSFET (Metal Oxide) | 60V | 40A (Ta) | 10V | - | 45nC @ 10V | 3600pF @ 10V | ±20V | - | 65W (Tc) | 5.1 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 60V 30A WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-WFDFN Exposed Pad
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Package: 8-WFDFN Exposed Pad |
Stock6,096 |
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MOSFET (Metal Oxide) | 60V | 30A (Ta) | 10V | - | 30.6nC @ 10V | 2400pF @ 10V | ±20V | - | 55W (Tc) | 8 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 60V 25A WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 12.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-WFDFN Exposed Pad
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Package: 8-WFDFN Exposed Pad |
Stock2,672 |
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MOSFET (Metal Oxide) | 60V | 25A (Ta) | 10V | - | 19.4nC @ 10V | 1580pF @ 10V | ±20V | - | 50W (Tc) | 11.1 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 60V 110A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 55A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,656 |
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MOSFET (Metal Oxide) | 60V | 110A (Ta) | 10V | - | 141nC @ 10V | 10000pF @ 10V | ±20V | - | 200W (Tc) | 3.1 mOhm @ 55A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 55V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Full Pack, I2Pak
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Package: TO-262-3 Full Pack, I2Pak |
Stock3,824 |
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MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 3.8 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Full Pack, I2Pak |
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Renesas Electronics America |
MOSFET N-CH 55V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,928 |
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MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 3.8 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 40V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,896 |
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MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 102nC @ 10V | 5850pF @ 25V | ±20V | - | 1.2W (Ta), 147W (Tc) | 2.8 mOhm @ 45A, 10V | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 40V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Full Pack, I2Pak
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Package: TO-262-3 Full Pack, I2Pak |
Stock6,128 |
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MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7050pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 2.8 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Full Pack, I2Pak |
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Renesas Electronics America |
MOSFET N-CH 40V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,152 |
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MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7050pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 2.8 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock9,660 |
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MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135nC @ 10V | 7500pF @ 25V | ±20V | - | 1.2W (Ta), 105W (Tc) | 3.2 mOhm @ 45A, 10V | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock9,768 |
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MOSFET (Metal Oxide) | 30V | 90A (Tc) | 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | ±20V | - | 1.2W (Ta), 105W (Tc) | 3.2 mOhm @ 45A, 10V | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 55V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,640 |
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MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 4V @ 250µA | 102nC @ 10V | 6000pF @ 25V | ±20V | - | 1.8W (Ta), 147W (Tc) | 4 mOhm @ 45A, 10V | 175°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Full Pack, I2Pak
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Package: TO-262-3 Full Pack, I2Pak |
Stock3,120 |
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MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 4V @ 250µA | 102nC @ 10V | 6000pF @ 25V | ±20V | - | 1.8W (Ta), 147W (Tc) | 4.4 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Full Pack, I2Pak |
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Renesas Electronics America |
MOSFET N-CH 55V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,992 |
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MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 4V @ 250µA | 102nC @ 10V | 6000pF @ 25V | ±20V | - | 1.8W (Ta), 147W (Tc) | 4.4 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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