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Renesas Electronics America |
MOSFET N-CH 30V 4.5A SC96
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V (Typ)
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SC-96-3, Thin Mini Mold
- Package / Case: SC-96
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Package: SC-96 |
Stock608,844 |
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MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4.5V, 10V | - | 7.4nC @ 10V (Typ) | 350pF @ 10V | ±20V | - | 1.25W (Ta) | 50 mOhm @ 2A, 10V | 150°C | Surface Mount | SC-96-3, Thin Mini Mold | SC-96 |
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Renesas Electronics America |
MOSFET N-CH 60V 85A LDPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 85A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 43A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-LDPAK
- Package / Case: SC-83
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Package: SC-83 |
Stock4,208 |
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MOSFET (Metal Oxide) | 60V | 85A (Ta) | 4.5V, 10V | - | 85nC @ 10V | 4100pF @ 10V | ±20V | - | 100W (Tc) | 4.5 mOhm @ 43A, 10V | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 250V 10A WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,608 |
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MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | - | 15nC @ 10V | 710pF @ 25V | ±30V | - | 25W (Tc) | 230 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UPAK
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock7,568 |
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MOSFET (Metal Oxide) | 60V | 2.4A (Ta) | 2.5V, 4.5V | - | 2nC @ 4.5V | 170pF @ 10V | ±12V | - | 1.5W (Ta) | 270 mOhm @ 1.2A, 4.5V | 150°C (TJ) | Surface Mount | UPAK | TO-243AA |
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Renesas Electronics America |
MOSFET N-CH 600V 0.4A LDPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,456 |
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