Page 9 - Renesas Electronics America Products - Transistors - FETs, MOSFETs - Single

NP89N04PUK-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 90A TO-220

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,720
NP89N04NUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 89A TO-220

Package: TO-262-3 Full Pack, I2Pak

Stock3,504
NP89N04MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 89A TO-220

Package: TO-220-3 Full Pack

Stock4,320
NP88N04KUG-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 88A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,664
NP82N03PUG-E1-AY
Renesas Electronics America

MOSFET N-CH 30V 82A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,928
NP60N055VUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 60A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,280
NP60N055NUK-S18-AY
Renesas Electronics America

MOSFET N-CH 55V 60A TO-220

Package: TO-262-3 Full Pack, I2Pak

Stock3,152
NP60N055MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 55V 60A TO-220

Package: TO-220-3

Stock5,184
NP60N04VUK-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 60A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock11,004
NP60N04NUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 60A TO-220

Package: TO-262-3 Full Pack, I2Pak

Stock7,936
NP60N04MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 60A TO-220

Package: TO-220-3 Full Pack

Stock3,072
NP40N10YDF-E1-AY
Renesas Electronics America

MOSFET N-CH 100V 40A MP-25ZP

Package: 8-PowerLDFN

Stock5,488
NP40N10PDF-E1-AY
Renesas Electronics America

MOSFET N-CH 100V 40A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
NP180N055TUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 180A TO-263

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock6,608
NP180N04TUK-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 180A TO-263

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock12,084
NP160N055TUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 160A TO-263

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock3,520
NP110N055PUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 110A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,232
NP110N055PUG-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 110A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,632
NP110N04PUK-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 110A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,808
NP109N055PUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 110A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,448

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NP89N04PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 45A, 5V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,720	MOSFET (Metal Oxide)	40V	90A (Tc)	10V	4V @ 250µA	102nC @ 10V	5850pF @ 25V	±20V	-	1.8W (Ta), 147W (Tc)	2.95 mOhm @ 45A, 5V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP89N04NUK-S18-AY	Renesas Electronics America	MOSFET N-CH 40V 89A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock3,504	MOSFET (Metal Oxide)	40V	90A (Tc)	10V	4V @ 250µA	102nC @ 10V	5850pF @ 25V	±20V	-	1.8W (Ta), 147W (Tc)	3.3 mOhm @ 45A, 10V	175°C (TJ)	Through Hole	TO-262	TO-262-3 Full Pack, I2Pak
NP89N04MUK-S18-AY	Renesas Electronics America	MOSFET N-CH 40V 89A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,320	MOSFET (Metal Oxide)	40V	90A (Tc)	10V	4V @ 250µA	102nC @ 10V	5850pF @ 25V	±20V	-	1.8W (Ta), 147W (Tc)	3.3 mOhm @ 45A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3 Full Pack
NP88N04KUG-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 88A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 44A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,664	MOSFET (Metal Oxide)	40V	88A (Tc)	10V	4V @ 250µA	250nC @ 10V	15000pF @ 25V	±20V	-	1.8W (Ta), 200W (Tc)	2.9 mOhm @ 44A, 10V	175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP82N03PUG-E1-AY	Renesas Electronics America	MOSFET N-CH 30V 82A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 41A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,928	MOSFET (Metal Oxide)	30V	82A (Tc)	10V	4V @ 250µA	160nC @ 10V	9080pF @ 25V	±20V	-	1.8W (Ta), 143W (Tc)	2.8 mOhm @ 41A, 10V	175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP60N055VUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 60A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,280	MOSFET (Metal Oxide)	55V	60A (Tc)	10V	4V @ 253µA	63nC @ 10V	3750pF @ 25V	±20V	-	1.2W (Ta), 105W (Tc)	5.5 mOhm @ 30A, 10V	175°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NP60N055NUK-S18-AY	Renesas Electronics America	MOSFET N-CH 55V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock3,152	MOSFET (Metal Oxide)	55V	60A (Tc)	10V	4V @ 250µA	63nC @ 10V	3750pF @ 25V	±20V	-	1.8W (Ta), 105W (Tc)	6 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-262	TO-262-3 Full Pack, I2Pak
NP60N055MUK-S18-AY	Renesas Electronics America	MOSFET N-CH 55V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,184	MOSFET (Metal Oxide)	55V	60A (Tc)	10V	4V @ 250µA	63nC @ 10V	3750pF @ 25V	±20V	-	1.8W (Ta), 105W (Tc)	6 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
NP60N04VUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 60A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 3.85 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock11,004	MOSFET (Metal Oxide)	40V	60A (Tc)	10V	4V @ 250µA	63nC @ 10V	3680pF @ 25V	±20V	-	1.2W (Ta), 105W (Tc)	3.85 mOhm @ 30A, 10V	175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
NP60N04NUK-S18-AY	Renesas Electronics America	MOSFET N-CH 40V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock7,936	MOSFET (Metal Oxide)	40V	60A (Tc)	10V	4V @ 250µA	63nC @ 10V	3680pF @ 25V	±20V	-	1.8W (Ta), 105W (Tc)	4.3 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Full Pack, I2Pak
NP60N04MUK-S18-AY	Renesas Electronics America	MOSFET N-CH 40V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,072	MOSFET (Metal Oxide)	40V	60A (Tc)	10V	4V @ 250µA	63nC @ 10V	3680pF @ 25V	±20V	-	1.8W (Ta), 105W (Tc)	4.3 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3 Full Pack
NP40N10YDF-E1-AY	Renesas Electronics America	MOSFET N-CH 100V 40A MP-25ZP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSON Package / Case: 8-PowerLDFN	Package: 8-PowerLDFN	Stock5,488	MOSFET (Metal Oxide)	100V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	71nC @ 10V	3150pF @ 25V	±20V	-	1W (Ta), 120W (Tc)	25 mOhm @ 20A, 10V	175°C (TJ)	Surface Mount	8-HSON	8-PowerLDFN
NP40N10PDF-E1-AY	Renesas Electronics America	MOSFET N-CH 100V 40A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	100V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	71nC @ 10V	3150pF @ 25V	±20V	-	1.8W (Ta), 120W (Tc)	27 mOhm @ 20A, 10V	175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP180N055TUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 180A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 90A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,608	MOSFET (Metal Oxide)	55V	180A (Tc)	10V	4V @ 250µA	294nC @ 10V	16050pF @ 25V	±20V	-	1.8W (Ta), 348W (Tc)	1.4 mOhm @ 90A, 10V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2Pak (6 Leads + Tab)
NP180N04TUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 180A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 297nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 90A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock12,084	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4V @ 250µA	297nC @ 10V	15750pF @ 25V	±20V	-	1.8W (Ta), 348W (Tc)	1.05 mOhm @ 90A, 10V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2Pak (6 Leads + Tab)
NP160N055TUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 160A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 80A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock3,520	MOSFET (Metal Oxide)	55V	160A (Tc)	10V	4V @ 250µA	189nC @ 10V	11250pF @ 25V	±20V	-	1.8W (Ta), 250W (Tc)	2.1 mOhm @ 80A, 10V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2Pak (6 Leads + Tab)
NP110N055PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,232	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	294nC @ 10V	16050pF @ 25V	±20V	-	1.8W (Ta), 348W (Tc)	1.75 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP110N055PUG-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,632	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	380nC @ 10V	25700pF @ 25V	±20V	-	1.8W (Ta), 288W (Tc)	2.4 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP110N04PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 297nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,808	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	297nC @ 10V	15750pF @ 25V	±20V	-	1.8W (Ta), 348W (Tc)	1.4 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP109N055PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,448	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	189nC @ 10V	11250pF @ 25V	±20V	-	1.8W (Ta), 250W (Tc)	2.2 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP109N04PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,824	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	189nC @ 10V	10800pF @ 25V	±20V	-	1.8W (Ta), 250W (Tc)	1.75 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP109N04PUG-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,272	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	270nC @ 10V	15750pF @ 25V	±20V	-	1.8W (Ta), 220W (Tc)	2.3 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP100N055PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 100A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 50A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,688	MOSFET (Metal Oxide)	55V	100A (Tc)	10V	4V @ 250µA	120nC @ 10V	7350pF @ 25V	±20V	-	1.8W (Ta), 176W (Tc)	3.25 mOhm @ 50A, 10V	175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP100N04PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 100A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock3,264	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	-	120nC @ 10V	7050pF @ 25V	±20V	-	1.8W (Ta), 176W (Tc)	2.3 mOhm @ 50A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
N0601N-ZK-E1-AY	Renesas Electronics America	MOSFET N-CH 60V 100A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,976	MOSFET (Metal Oxide)	60V	100A (Ta)	10V	-	133nC @ 10V	7730pF @ 25V	±20V	-	1.5W (Ta), 156W (Tc)	4.2 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
N0413N-ZK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 100A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,160	MOSFET (Metal Oxide)	40V	100A (Ta)	10V	-	100nC @ 10V	5550pF @ 25V	±20V	-	1.5W (Ta), 119W (Tc)	3.3 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HS54095TZ-E	Renesas Electronics America	MOSFET N-CH 600V 0.2A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 16.5 Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 Short Body	Package: TO-226-3, TO-92-3 Short Body	Stock6,464	MOSFET (Metal Oxide)	600V	200mA (Ta)	10V	-	4.8nC @ 10V	66pF @ 25V	±30V	-	750mW (Ta)	16.5 Ohm @ 100mA, 10V	150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 Short Body
2SK4151TZ-E	Renesas Electronics America	MOSFET N-CH 150V 1A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 500mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,712	MOSFET (Metal Oxide)	150V	1A (Ta)	2.5V, 4V	-	3.5nC @ 4V	98pF @ 10V	±10V	-	750mW (Ta)	1.95 Ohm @ 500mA, 4V	150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)