Page 35 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

R6007KNX
Rohm Semiconductor

MOSFET N-CH 600V 7A TO220-3

Package: TO-220-3 Full Pack

Stock15,336
R6015KNJTL
Rohm Semiconductor

NCH 600V 15A POWER MOSFET

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,744
R6009KNJTL
Rohm Semiconductor

MOSFET N-CH 600V 9A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock22,164
R6007KNJTL
Rohm Semiconductor

MOSFET N-CH 600V 7A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock21,000
R6025FNZC8
Rohm Semiconductor

MOSFET N-CH 600V 25A TO3PF

Package: TO-3P-3 Full Pack

Stock4,992
R6015ANX
Rohm Semiconductor

MOSFET N-CH 600V 15A TO-220FM

Package: TO-220-2 Full Pack

Stock13,860
R6015ANZC8
Rohm Semiconductor

MOSFET N-CH 600V 15A TO3PF

Package: TO-3P-3 Full Pack

Stock8,532
R6012FNX
Rohm Semiconductor

MOSFET N-CH 600V 12A TO-220FM

Package: TO-220-2 Full Pack

Stock19,896
R6015ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 15A TO3PF

Package: TO-3P-3 Full Pack

Stock9,384
RCX510N25
Rohm Semiconductor

MOSFET N-CH 250V 51A TO-220FM

Package: TO-220-2 Full Pack

Stock20,088
R6024ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 24A TO3PF

Package: TO-3P-3 Full Pack

Stock6,180
R6020ANZC8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

Package: TO-3P-3 Full Pack

Stock7,888
R6024ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 24A TO247

Package: TO-247-3

Stock6,648
R6012ANX
Rohm Semiconductor

MOSFET N-CH 600V 12A TO-220FM

Package: TO-220-2 Full Pack

Stock4,880
R6008FNX
Rohm Semiconductor

MOSFET N-CH 600V 8A TO-220FM

Package: TO-220-2 Full Pack

Stock16,344
RCX700N20
Rohm Semiconductor

MOSFET N-CH 200V 70A TO220

Package: TO-220-2 Full Pack

Stock6,168
R5009FNX
Rohm Semiconductor

MOSFET N-CH 500V 9A TO-220FM

Package: TO-220-2 Full Pack

Stock6,660
R6015ENX
Rohm Semiconductor

MOSFET N-CH 600V 15A TO220

Package: TO-220-2 Full Pack

Stock10,260
R6024ENX
Rohm Semiconductor

MOSFET N-CH 600V 24A TO220

Package: TO-220-2 Full Pack

Stock8,952
R8010ANX
Rohm Semiconductor

MOSFET N-CH 800V 10A TO220

Package: TO-220-2 Full Pack

Stock14,760

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
R6007KNX	Rohm Semiconductor	MOSFET N-CH 600V 7A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock15,336	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 1mA	14.5nC @ 10V	470pF @ 25V	±20V	Schottky Diode (Isolated)	46W (Tc)	620 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6015KNJTL	Rohm Semiconductor	NCH 600V 15A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,744	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	5V @ 1mA	37.5nC @ 10V	1050pF @ 25V	±20V	-	184W (Tc)	290 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6009KNJTL	Rohm Semiconductor	MOSFET N-CH 600V 9A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock22,164	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	5V @ 1mA	16.5nC @ 10V	540pF @ 25V	±20V	Schottky Diode (Isolated)	94W (Tc)	535 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6007KNJTL	Rohm Semiconductor	MOSFET N-CH 600V 7A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock21,000	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 1mA	14.5nC @ 10V	470pF @ 25V	±20V	Schottky Diode (Isolated)	78W (Tc)	620 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6025FNZC8	Rohm Semiconductor	MOSFET N-CH 600V 25A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock4,992	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	5V @ 1mA	85nC @ 10V	3500pF @ 25V	±30V	-	150W (Tc)	180 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6015ANX	Rohm Semiconductor	MOSFET N-CH 600V 15A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock13,860	MOSFET (Metal Oxide)	600V	15A (Ta)	10V	4.5V @ 1mA	50nC @ 10V	1700pF @ 25V	±30V	-	50W (Tc)	300 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6015ANZC8	Rohm Semiconductor	MOSFET N-CH 600V 15A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock8,532	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	4.15V @ 1mA	50nC @ 10V	1700pF @ 25V	±30V	-	110W (Tc)	300 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6012FNX	Rohm Semiconductor	MOSFET N-CH 600V 12A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 510 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock19,896	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	5V @ 1mA	35nC @ 10V	1300pF @ 25V	±30V	-	50W (Tc)	510 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6015ENZC8	Rohm Semiconductor	MOSFET N-CH 600V 15A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,384	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	4V @ 1mA	40nC @ 10V	910pF @ 25V	±20V	-	120W (Tc)	290 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
RCX510N25	Rohm Semiconductor	MOSFET N-CH 250V 51A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock20,088	MOSFET (Metal Oxide)	250V	51A (Ta)	10V	-	-	-	±30V	-	40W (Tc)	-	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6024ENZC8	Rohm Semiconductor	MOSFET N-CH 600V 24A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock6,180	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	4V @ 1mA	70nC @ 10V	1650pF @ 25V	±20V	-	120W (Tc)	165 mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6020ANZC8	Rohm Semiconductor	MOSFET N-CH 600V 20A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock7,888	MOSFET (Metal Oxide)	600V	20A (Ta)	10V	4.15V @ 1mA	65nC @ 10V	2040pF @ 25V	±30V	-	120W (Tc)	220 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6024ENZ1C9	Rohm Semiconductor	MOSFET N-CH 600V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,648	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	4V @ 1mA	70nC @ 10V	1650pF @ 25V	±20V	-	120W (Tc)	165 mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
R6012ANX	Rohm Semiconductor	MOSFET N-CH 600V 12A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock4,880	MOSFET (Metal Oxide)	600V	12A (Ta)	10V	4.5V @ 1mA	35nC @ 10V	1300pF @ 25V	±30V	-	50W (Tc)	420 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6008FNX	Rohm Semiconductor	MOSFET N-CH 600V 8A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock16,344	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4V @ 1mA	20nC @ 10V	580pF @ 25V	±30V	-	50W (Tc)	950 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX700N20	Rohm Semiconductor	MOSFET N-CH 200V 70A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 42.7 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock6,168	MOSFET (Metal Oxide)	200V	70A (Tc)	10V	5V @ 1mA	125nC @ 10V	6900pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	42.7 mOhm @ 35A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5009FNX	Rohm Semiconductor	MOSFET N-CH 500V 9A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 840 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock6,660	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 1mA	18nC @ 10V	630pF @ 25V	±30V	-	50W (Tc)	840 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6015ENX	Rohm Semiconductor	MOSFET N-CH 600V 15A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,260	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	4V @ 1mA	40nC @ 10V	910pF @ 25V	±20V	-	40W (Tc)	290 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6024ENX	Rohm Semiconductor	MOSFET N-CH 600V 24A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock8,952	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	4V @ 1mA	70nC @ 10V	1650pF @ 25V	±20V	-	40W (Tc)	165 mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R8010ANX	Rohm Semiconductor	MOSFET N-CH 800V 10A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock14,760	MOSFET (Metal Oxide)	800V	10A (Tc)	10V	5V @ 1mA	62nC @ 10V	1750pF @ 25V	±30V	-	40W (Tc)	560 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R5021ANX	Rohm Semiconductor	MOSFET N-CH 500V 21A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock9,864	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4.5V @ 1mA	64nC @ 10V	2300pF @ 25V	±30V	-	50W (Tc)	210 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX511N25	Rohm Semiconductor	MOSFET N-CH 250V 51A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock9,228	MOSFET (Metal Oxide)	250V	51A (Tc)	10V	5V @ 1mA	120nC @ 10V	7000pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	65 mOhm @ 25.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6011ENX	Rohm Semiconductor	MOSFET N-CH 600V 11A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,104	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 1mA	32nC @ 10V	670pF @ 25V	±20V	-	40W (Tc)	390 mOhm @ 3.8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX450N20	Rohm Semiconductor	MOSFET N-CH 200V 45A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock567,840	MOSFET (Metal Oxide)	200V	45A (Tc)	10V	5V @ 1mA	80nC @ 10V	4200pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	55 mOhm @ 22.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6009ENX	Rohm Semiconductor	MOSFET N-CH 600V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock8,340	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 1mA	23nC @ 10V	430pF @ 25V	±20V	-	40W (Tc)	535 mOhm @ 2.8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R8002ANX	Rohm Semiconductor	MOSFET N-CH 800V 2A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock18,936	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 1mA	12.7nC @ 10V	210pF @ 25V	±30V	-	35W (Tc)	4.3 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
RCX220N25	Rohm Semiconductor	MOSFET N-CH 250V 22A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock6,480	MOSFET (Metal Oxide)	250V	22A (Tc)	10V	5V @ 1mA	60nC @ 10V	3200pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	140 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6007ENX	Rohm Semiconductor	MOSFET N-CH 600V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock13,236	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 1mA	20nC @ 10V	390pF @ 25V	±20V	-	40W (Tc)	620 mOhm @ 2.4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack