Page 41 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RSH110N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 11A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,744
RDD022N60TL
Rohm Semiconductor

MOSFET N-CH 600V CPT

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,808
RDD022N50TL
Rohm Semiconductor

MOSFET N-CH 500V CPT

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock67,392
RSD150N06TL
Rohm Semiconductor

MOSFET N-CH 60V 15A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,012
RSD080P05TL
Rohm Semiconductor

MOSFET P-CH 45V 8A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock86,148
RRS075P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock19,200
RCD050N20TL
Rohm Semiconductor

MOSFET N-CH 200V 5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock360,000
RSS050P03FU6TB
Rohm Semiconductor

MOSFET P-CH 30V 5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock211,200
RSS090P03FU7TB
Rohm Semiconductor

MOSFET P-CH 30V 9A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock73,728
RSD080N06TL
Rohm Semiconductor

MOSFET N-CH 60V 8A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,464
RSD221N06TL
Rohm Semiconductor

MOSFET N-CH 60V 22A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,480
RSD131P10TL
Rohm Semiconductor

MOSFET P-CH 100V 13A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock8,088
RXH125N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 12.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,928
RSS040P03FU6TB
Rohm Semiconductor

MOSFET P-CH 30V 4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock22,236
ZDS020N60TB
Rohm Semiconductor

MOSFET N-CH 600V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock26,724
RSH100N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 10A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock49,440
RSS065N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 6.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000
RSS065N03TB
Rohm Semiconductor

MOSFET N-CH 30V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,853,964
RQ1E100XNTR
Rohm Semiconductor

MOSFET N-CH 30V 10A TSMT8

Package: 8-SMD, Flat Lead

Stock7,728
RSD045P05TL
Rohm Semiconductor

MOSFET P-CH 45V CPT3

Package: -

Stock5,648

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RSH110N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 11A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,744	MOSFET (Metal Oxide)	30V	11A (Ta)	-	2.5V @ 1mA	17nC @ 5V	1300pF @ 10V	-	-	2W (Ta)	10.7 mOhm @ 11A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RDD022N60TL	Rohm Semiconductor	MOSFET N-CH 600V CPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 6.7 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,808	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.7V @ 1mA	7nC @ 10V	175pF @ 25V	±30V	-	20W (Tc)	6.7 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RDD022N50TL	Rohm Semiconductor	MOSFET N-CH 500V CPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 168pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 5.4 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock67,392	MOSFET (Metal Oxide)	500V	2A (Tc)	10V	4.7V @ 1mA	6.7nC @ 10V	168pF @ 25V	±30V	-	20W (Tc)	5.4 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSD150N06TL	Rohm Semiconductor	MOSFET N-CH 60V 15A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,012	MOSFET (Metal Oxide)	60V	15A (Ta)	4V, 10V	3V @ 1mA	18nC @ 10V	930pF @ 10V	±20V	-	20W (Tc)	40 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSD080P05TL	Rohm Semiconductor	MOSFET P-CH 45V 8A CPT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 91 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock86,148	MOSFET (Metal Oxide)	45V	8A (Ta)	4V, 10V	3V @ 1mA	93.4nC @ 5V	11000pF @ 10V	±20V	-	15W (Tc)	91 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RRS075P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 7.5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock19,200	MOSFET (Metal Oxide)	30V	7.5A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
RCD050N20TL	Rohm Semiconductor	MOSFET N-CH 200V 5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 618 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock360,000	MOSFET (Metal Oxide)	200V	5A (Ta)	10V	5.25V @ 1mA	9nC @ 10V	380pF @ 25V	±30V	-	20W (Tc)	618 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSS050P03FU6TB	Rohm Semiconductor	MOSFET P-CH 30V 5A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock211,200	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	13nC @ 5V	1200pF @ 10V	±20V	-	2W (Ta)	42 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSS090P03FU7TB	Rohm Semiconductor	MOSFET P-CH 30V 9A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock73,728	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	2.5V @ 1mA	39nC @ 5V	4000pF @ 10V	±20V	-	2W (Ta)	14 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSD080N06TL	Rohm Semiconductor	MOSFET N-CH 60V 8A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,464	MOSFET (Metal Oxide)	60V	8A (Ta)	4V, 10V	2.5V @ 1mA	9.4nC @ 10V	380pF @ 10V	±20V	-	15W (Tc)	80 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSD221N06TL	Rohm Semiconductor	MOSFET N-CH 60V 22A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 22A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,480	MOSFET (Metal Oxide)	60V	22A (Tc)	4V, 10V	3V @ 1mA	30nC @ 10V	1500pF @ 10V	±20V	-	850mW (Ta), 20W (Tc)	26 mOhm @ 22A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RSD131P10TL	Rohm Semiconductor	MOSFET P-CH 100V 13A CPT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock8,088	MOSFET (Metal Oxide)	100V	13A (Tc)	4V, 10V	2.5V @ 1mA	40nC @ 10V	2400pF @ 25V	±20V	-	850mW (Ta), 20W (Tc)	200 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RXH125N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 12.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,928	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4V, 10V	2.5V @ 1mA	12.7nC @ 5V	1000pF @ 10V	±20V	-	2W (Ta)	12 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSS040P03FU6TB	Rohm Semiconductor	MOSFET P-CH 30V 4A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 58 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock22,236	MOSFET (Metal Oxide)	30V	4A (Ta)	4V, 10V	2.5V @ 1mA	8nC @ 5V	800pF @ 10V	±20V	-	2W (Ta)	58 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
ZDS020N60TB	Rohm Semiconductor	MOSFET N-CH 600V 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 630mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,724	MOSFET (Metal Oxide)	600V	630mA (Tc)	10V	4V @ 1mA	20nC @ 10V	310pF @ 10V	±30V	-	2W (Tc)	5 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSH100N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 10A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock49,440	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	20nC @ 5V	1070pF @ 10V	±20V	-	2W (Ta)	13.3 mOhm @ 10A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSS065N03FU6TB	Rohm Semiconductor	MOSFET N-CH 30V 6.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4V, 10V	2.5V @ 1mA	6.1nC @ 5V	430pF @ 10V	±20V	-	2W (Ta)	26 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSS065N03TB	Rohm Semiconductor	MOSFET N-CH 30V 6.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,853,964	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4V, 10V	2.5V @ 1mA	6.1nC @ 5V	430pF @ 10V	±20V	-	2W (Ta)	26 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RQ1E100XNTR	Rohm Semiconductor	MOSFET N-CH 30V 10A TSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550mW (Ta) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock7,728	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	12.7nC @ 5V	1000pF @ 10V	±20V	-	550mW (Ta)	10.5 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RSD045P05TL	Rohm Semiconductor	MOSFET P-CH 45V CPT3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,648	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RSS050P03TB	Rohm Semiconductor	MOSFET P-CH 30V 5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,188,120	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	13nC @ 5V	1200pF @ 10V	±20V	-	2W (Ta)	42 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RSR020P05FRATL	Rohm Semiconductor	MOSFET P-CH 45V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock2,752	MOSFET (Metal Oxide)	45V	2A (Ta)	4V, 10V	3V @ 1mA	4.5nC @ 4.5V	500pF @ 10V	±20V	-	540mW (Ta)	190 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ1A070APTR	Rohm Semiconductor	MOSFET P-CH 12V 7A TSMT8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 550mW (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,424	MOSFET (Metal Oxide)	12V	7A (Ta)	1.5V, 4.5V	1V @ 1mA	80nC @ 4.5V	7800pF @ 6V	-8V	-	550mW (Ta)	14 mOhm @ 7A, 4.5V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
2SK2463T100	Rohm Semiconductor	MOSFET N-CH 60V 2A MPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 380 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	Package: TO-243AA	Stock18,564	MOSFET (Metal Oxide)	60V	2A (Ta)	4V, 10V	2.5V @ 1mA	-	200pF @ 10V	±20V	-	500mW (Ta)	380 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	MPT3	TO-243AA
2SK2103T100	Rohm Semiconductor	MOSFET N-CH 30V 2A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 400 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	Package: TO-243AA	Stock293,448	MOSFET (Metal Oxide)	30V	2A (Ta)	4V, 10V	2.5V @ 1mA	-	230pF @ 10V	±20V	-	500mW (Ta)	400 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	MPT3	TO-243AA
RSQ030P03TR	Rohm Semiconductor	MOSFET P-CH 30V 3A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock889,032	MOSFET (Metal Oxide)	30V	3A (Ta)	4V, 10V	2.5V @ 1mA	6nC @ 5V	440pF @ 10V	±20V	-	1.25W (Ta)	80 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
TT8U2TCR	Rohm Semiconductor	MOSFET P-CH 20V 2.4A TSST8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Vgs (Max): ±10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSST Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,912	MOSFET (Metal Oxide)	20V	2.4A (Ta)	1.5V, 4.5V	1V @ 1mA	6.7nC @ 4.5V	850pF @ 10V	±10V	Schottky Diode (Isolated)	1.25W (Ta)	105 mOhm @ 2.4A, 4.5V	150°C (TJ)	Surface Mount	8-TSST	8-SMD, Flat Lead
QS5U33TR	Rohm Semiconductor	MOSFET P-CH 30V 2A TSMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock3,392	MOSFET (Metal Oxide)	30V	2A (Ta)	4V, 10V	2.5V @ 1mA	3.4nC @ 5V	310pF @ 10V	±20V	Schottky Diode (Isolated)	1.25W (Ta)	135 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5