Page 38 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RSD050N10TL
Rohm Semiconductor

MOSFET N-CH 100V 5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock145,020
RRH040P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 4A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock24,876
RZR040P01TL
Rohm Semiconductor

MOSFET P-CH 12V 4A TSMT3

Package: SC-96

Stock1,869,252
RSR010N10TL
Rohm Semiconductor

MOSFET N-CH 100V 1.0A TSMT3

Package: SC-96

Stock73,920
RUR040N02TL
Rohm Semiconductor

MOSFET N-CH 20V 4A TSMT3

Package: SC-96

Stock995,844
RSR020N06TL
Rohm Semiconductor

MOSFET N-CH 60V 2A TSMT3

Package: SC-96

Stock362,784
RRR030P03TL
Rohm Semiconductor

MOSFET P-CH 30V 3A TSMT3

Package: SC-96

Stock1,254,984
RQ6E050ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 5A TSMT

Package: SOT-23-6 Thin, TSOT-23-6

Stock36,360
RU1C001UNTCL
Rohm Semiconductor

MOSFET N-CH 20V 0.1A UMT3F

Package: SC-85

Stock72,000
RZM002P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.2A VMT3

Package: SOT-723

Stock4,187,820
RV1C002UNT2CL
Rohm Semiconductor

MOSFET N-CH 20V 0.15A VML0806

Package: 3-SMD, No Lead

Stock192,000
RU1C002ZPTCL
Rohm Semiconductor

MOSFET P-CH 20V 0.2A UMT3F

Package: SC-85

Stock120,012
RE1C001ZPTL
Rohm Semiconductor

MOSFET P-CH 20V 0.1A EMT3

Package: SC-89, SOT-490

Stock6,880
SCT3080KLGC11
Rohm Semiconductor

MOSFET NCH 1.2KV 31A TO247N

Package: TO-247-3

Stock4,560
SCT2160KEC
Rohm Semiconductor

MOSFET N-CH 1200V 22A TO-247

Package: TO-247-3

Stock4,512
RTR020N05TL
Rohm Semiconductor

MOSFET N-CH 45V 2A TSMT3

Package: SC-96

Stock582,828
RSD050N06TL
Rohm Semiconductor

MOSFET N-CH 60V 5A SOT428

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock15,444
RTR030N05TL
Rohm Semiconductor

MOSFET N-CH 45V 3A TSMT3

Package: SC-96

Stock719,388
RSR030N06TL
Rohm Semiconductor

MOSFET N-CH 60V 3A TSMT3

Package: SC-96

Stock684,852
RE1C002UNTCL
Rohm Semiconductor

MOSFET N-CH 20V 0.2A EMT3

Package: SC-89, SOT-490

Stock1,080,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RSD050N10TL	Rohm Semiconductor	MOSFET N-CH 100V 5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock145,020	MOSFET (Metal Oxide)	100V	5A (Ta)	4V, 10V	2.5V @ 1mA	14nC @ 10V	530pF @ 25V	±20V	-	15W (Tc)	190 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RRH040P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 4A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock24,876	MOSFET (Metal Oxide)	30V	4A (Ta)	4V, 10V	2.5V @ 1mA	5.2nC @ 5V	480pF @ 10V	±20V	-	650mW (Ta)	75 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RZR040P01TL	Rohm Semiconductor	MOSFET P-CH 12V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock1,869,252	MOSFET (Metal Oxide)	12V	4A (Ta)	1.5V, 4.5V	1V @ 1mA	30nC @ 4.5V	2350pF @ 6V	±10V	-	1W (Ta)	30 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RSR010N10TL	Rohm Semiconductor	MOSFET N-CH 100V 1.0A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock73,920	MOSFET (Metal Oxide)	100V	1A (Ta)	4V, 10V	2.5V @ 1mA	3.5nC @ 5V	140pF @ 25V	±20V	-	540mW (Ta)	520 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RUR040N02TL	Rohm Semiconductor	MOSFET N-CH 20V 4A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock995,844	MOSFET (Metal Oxide)	20V	4A (Ta)	1.5V, 4.5V	1.3V @ 1mA	8nC @ 4.5V	680pF @ 10V	±10V	-	1W (Ta)	35 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RSR020N06TL	Rohm Semiconductor	MOSFET N-CH 60V 2A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock362,784	MOSFET (Metal Oxide)	60V	2A (Ta)	4V, 10V	2.5V @ 1mA	4.9nC @ 10V	180pF @ 10V	±20V	-	540mW (Ta)	170 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RRR030P03TL	Rohm Semiconductor	MOSFET P-CH 30V 3A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock1,254,984	MOSFET (Metal Oxide)	30V	3A (Ta)	4V, 10V	2.5V @ 1mA	5.2nC @ 5V	480pF @ 10V	±20V	-	1W (Ta)	75 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ6E050ATTCR	Rohm Semiconductor	MOSFET P-CH 30V 5A TSMT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock36,360	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	2.5V @ 1mA	20.8nC @ 10V	940pF @ 15V	±20V	-	1.25W (Ta)	27 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RU1C001UNTCL	Rohm Semiconductor	MOSFET N-CH 20V 0.1A UMT3F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Package: SC-85	Stock72,000	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	7.1pF @ 10V	±12V	-	150mW (Ta)	3.5 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	UMT3F	SC-85
RZM002P02T2L	Rohm Semiconductor	MOSFET P-CH 20V 0.2A VMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock4,187,820	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 4.5V	1V @ 100µA	1.4nC @ 4.5V	115pF @ 10V	±10V	-	150mW (Ta)	1.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
RV1C002UNT2CL	Rohm Semiconductor	MOSFET N-CH 20V 0.15A VML0806 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 150mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML0806 Package / Case: 3-SMD, No Lead	Package: 3-SMD, No Lead	Stock192,000	MOSFET (Metal Oxide)	20V	150mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	12pF @ 10V	±8V	-	100mW (Ta)	2 Ohm @ 150mA, 4.5V	150°C (TJ)	Surface Mount	VML0806	3-SMD, No Lead
RU1C002ZPTCL	Rohm Semiconductor	MOSFET P-CH 20V 0.2A UMT3F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Package: SC-85	Stock120,012	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 4.5V	1V @ 100µA	1.4nC @ 4.5V	115pF @ 10V	±10V	-	150mW (Ta)	1.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	UMT3F	SC-85
RE1C001ZPTL	Rohm Semiconductor	MOSFET P-CH 20V 0.1A EMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock6,880	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	15pF @ 10V	±10V	-	150mW (Ta)	3.8 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
SCT3080KLGC11	Rohm Semiconductor	MOSFET NCH 1.2KV 31A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 800V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock4,560	SiCFET (Silicon Carbide)	1200V	31A (Tc)	18V	5.6V @ 5mA	60nC @ 18V	785pF @ 800V	+22V, -4V	-	165W (Tc)	104 mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT2160KEC	Rohm Semiconductor	MOSFET N-CH 1200V 22A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 208 mOhm @ 7A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,512	SiCFET (Silicon Carbide)	1200V	22A (Tc)	18V	4V @ 2.5mA	62nC @ 18V	1200pF @ 800V	+22V, -6V	-	165W (Tc)	208 mOhm @ 7A, 18V	175°C (TJ)	Through Hole	TO-247	TO-247-3
RTR020N05TL	Rohm Semiconductor	MOSFET N-CH 45V 2A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock582,828	MOSFET (Metal Oxide)	45V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.1nC @ 4.5V	200pF @ 10V	±12V	-	1W (Ta)	180 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RSD050N06TL	Rohm Semiconductor	MOSFET N-CH 60V 5A SOT428 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 109 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock15,444	MOSFET (Metal Oxide)	60V	5A (Ta)	4V, 10V	3V @ 1mA	8nC @ 10V	290pF @ 10V	±20V	-	15W (Tc)	109 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RTR030N05TL	Rohm Semiconductor	MOSFET N-CH 45V 3A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 67 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock719,388	MOSFET (Metal Oxide)	45V	3A (Ta)	2.5V, 4.5V	1.5V @ 1mA	6.2nC @ 4.5V	510pF @ 10V	±12V	-	1W (Ta)	67 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RSR030N06TL	Rohm Semiconductor	MOSFET N-CH 60V 3A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock684,852	MOSFET (Metal Oxide)	60V	3A (Ta)	4V, 10V	2.5V @ 1mA	-	380pF @ 10V	±20V	-	540mW (Ta)	85 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RE1C002UNTCL	Rohm Semiconductor	MOSFET N-CH 20V 0.2A EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock1,080,000	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 2.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1.2 Ohm @ 100mA, 2.5V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
R6020FNJTL	Rohm Semiconductor	MOSFET N-CH 600V 20A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock7,408	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 1mA	60nC @ 10V	2350pF @ 25V	±30V	-	50W (Tc)	280 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RSJ550N10TL	Rohm Semiconductor	MOSFET N-CH 100V 55A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 16.8 mOhm @ 27.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock6,192	MOSFET (Metal Oxide)	100V	55A (Ta)	4V, 10V	2.5V @ 1mA	143nC @ 10V	6150pF @ 25V	±20V	-	100W (Tc)	16.8 mOhm @ 27.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
R6024KNJTL	Rohm Semiconductor	NCH 600V 24A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock6,000	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 1mA	45nC @ 10V	2000pF @ 25V	±20V	-	245W (Tc)	165 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LPTS	SC-83
R6015ENJTL	Rohm Semiconductor	MOSFET N-CH 600V 15A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,544	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	4V @ 1mA	40nC @ 10V	910pF @ 25V	±20V	-	40W (Tc)	290 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	LPTS (D2PAK)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6015FNJTL	Rohm Semiconductor	MOSFET N-CH 600V 15A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock5,376	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	5V @ 1mA	42nC @ 10V	1660pF @ 25V	±30V	-	50W (Tc)	350 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
RSJ400N10TL	Rohm Semiconductor	MOSFET N-CH 100V 40A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: SC-83	Package: SC-83	Stock6,800	MOSFET (Metal Oxide)	100V	40A (Tc)	4V, 10V	2.5V @ 1mA	90nC @ 10V	3600pF @ 25V	±20V	-	1.35W (Ta), 50W (Tc)	27 mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	LPTS (SC-83)	SC-83
R6024ENJTL	Rohm Semiconductor	MOSFET N-CH 600V 24A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,736	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	4V @ 1mA	70nC @ 10V	1650pF @ 25V	±20V	-	40W (Tc)	165 mOhm @ 11.3A, 10V	150°C (TJ)	Surface Mount	LPTS (D2PAK)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6011ENJTL	Rohm Semiconductor	MOSFET N-CH 600V 11A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,032	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 1mA	32nC @ 10V	670pF @ 25V	±20V	-	40W (Tc)	390 mOhm @ 3.8A, 10V	150°C (TJ)	Surface Mount	LPTS (D2PAK)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB