Page 40 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

QS5U21TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

Package: SOT-23-5 Thin, TSOT-23-5

Stock36,000
RSQ025P03TR
Rohm Semiconductor

MOSFET P-CH 30V 2.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock537,456
RAL045P01TCR
Rohm Semiconductor

MOSFET P-CH 12V 4.5A TUMT6

Package: 6-SMD, Flat Leads

Stock72,000
US5U29TR
Rohm Semiconductor

MOSFET P-CH 20V 1A TUMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock62,448
US5U30TR
Rohm Semiconductor

MOSFET P-CH 20V 1A TUMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock14,052
RTQ035P02TR
Rohm Semiconductor

MOSFET P-CH 20V 3.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock551,316
QS5U26TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

Package: SOT-23-5 Thin, TSOT-23-5

Stock5,648
QS5U23TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

Package: SOT-23-5 Thin, TSOT-23-5

Stock3,472
US5U2TR
Rohm Semiconductor

MOSFET N-CH 30V 1.4A TUMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock36,000
US5U1TR
Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock72,000
QS6U22TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock7,184
QS5U16TR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT5

Package: SOT-23-5 Thin, TSOT-23-5

Stock36,000
RSR020P03TL
Rohm Semiconductor

MOSFET P-CH 30V 2A TSMT3

Package: SC-96

Stock1,070,232
RTQ030P02TR
Rohm Semiconductor

MOSFET P-CH 20V 3A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock659,460
RXR035N03TCL
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT3

Package: SC-96

Stock36,000
RTQ025P02TR
Rohm Semiconductor

MOSFET P-CH 20V 2.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock380,760
RW1C020UNT2R
Rohm Semiconductor

MOSFET N-CH 20V 2A WEMT6

Package: SOT-563, SOT-666

Stock36,000
ES6U42T2R
Rohm Semiconductor

MOSFET P-CH 20V 1A WEMT6

Package: SOT-563, SOT-666

Stock3,264
RTQ020N05TR
Rohm Semiconductor

MOSFET N-CH 45V 2A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock396,372
RW1C015UNT2R
Rohm Semiconductor

MOSFET N-CH 20V 1.5A WEMT6

Package: SOT-563, SOT-666

Stock96,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
QS5U21TR	Rohm Semiconductor	MOSFET P-CH 20V 1.5A TSMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock36,000	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	2V @ 1mA	4.2nC @ 4.5V	325pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	200 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
RSQ025P03TR	Rohm Semiconductor	MOSFET P-CH 30V 2.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock537,456	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4V, 10V	2.5V @ 1mA	4.4nC @ 5V	320pF @ 10V	±20V	-	1.25W (Ta)	110 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RAL045P01TCR	Rohm Semiconductor	MOSFET P-CH 12V 4.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock72,000	MOSFET (Metal Oxide)	12V	4.5A (Ta)	1.5V, 4.5V	1V @ 1mA	40nC @ 4.5V	4200pF @ 6V	-8V	-	1W (Ta)	30 mOhm @ 4.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
US5U29TR	Rohm Semiconductor	MOSFET P-CH 20V 1A TUMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock62,448	MOSFET (Metal Oxide)	20V	1A (Ta)	2.5V, 4.5V	2V @ 1mA	2.1nC @ 5V	150pF @ 10V	±12V	Schottky Diode (Isolated)	1W (Ta)	390 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	TUMT5	6-SMD (5 Leads), Flat Lead
US5U30TR	Rohm Semiconductor	MOSFET P-CH 20V 1A TUMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock14,052	MOSFET (Metal Oxide)	20V	1A (Ta)	2.5V, 4.5V	2V @ 1mA	2.1nC @ 4.5V	150pF @ 10V	±12V	Schottky Diode (Isolated)	1W (Ta)	390 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	TUMT5	6-SMD (5 Leads), Flat Lead
RTQ035P02TR	Rohm Semiconductor	MOSFET P-CH 20V 3.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock551,316	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.5V, 4.5V	2V @ 1mA	10.5nC @ 4.5V	1200pF @ 10V	±12V	-	1.25W (Ta)	65 mOhm @ 3.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
QS5U26TR	Rohm Semiconductor	MOSFET P-CH 20V 1.5A TSMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock5,648	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	2V @ 1mA	4.2nC @ 4.5V	325pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	200 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
QS5U23TR	Rohm Semiconductor	MOSFET P-CH 20V 1.5A TSMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock3,472	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	2V @ 1mA	4.2nC @ 4.5V	325pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	200 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
US5U2TR	Rohm Semiconductor	MOSFET N-CH 30V 1.4A TUMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock36,000	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4V, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	±20V	Schottky Diode (Isolated)	1W (Ta)	240 mOhm @ 1.4A, 10V	150°C (TJ)	Surface Mount	TUMT5	6-SMD (5 Leads), Flat Lead
US5U1TR	Rohm Semiconductor	MOSFET N-CH 30V 1.5A TUMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock72,000	MOSFET (Metal Oxide)	30V	1.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	2.2nC @ 4.5V	80pF @ 10V	±12V	Schottky Diode (Isolated)	1W (Ta)	240 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT5	6-SMD (5 Leads), Flat Lead
QS6U22TR	Rohm Semiconductor	MOSFET P-CH 20V 1.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,184	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	2V @ 1mA	3nC @ 4.5V	270pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	215 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
QS5U16TR	Rohm Semiconductor	MOSFET N-CH 30V 2A TSMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	Package: SOT-23-5 Thin, TSOT-23-5	Stock36,000	MOSFET (Metal Oxide)	30V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	3.9nC @ 4.5V	175pF @ 10V	±12V	Schottky Diode (Isolated)	900mW (Ta)	100 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT5	SOT-23-5 Thin, TSOT-23-5
RSR020P03TL	Rohm Semiconductor	MOSFET P-CH 30V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock1,070,232	MOSFET (Metal Oxide)	30V	2A (Ta)	4V, 10V	-	4.3nC @ 5V	370pF @ 10V	±20V	-	1W (Ta)	120 mOhm @ 2A, 10V	-	Surface Mount	TSMT3	SC-96
RTQ030P02TR	Rohm Semiconductor	MOSFET P-CH 20V 3A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock659,460	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	2V @ 1mA	9nC @ 4.5V	800pF @ 10V	±12V	-	1.25W (Ta)	80 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RXR035N03TCL	Rohm Semiconductor	MOSFET N-CH 30V 3.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock36,000	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4V, 10V	2.5V @ 1mA	3.3nC @ 5V	180pF @ 10V	±20V	-	1W (Ta)	50 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RTQ025P02TR	Rohm Semiconductor	MOSFET P-CH 20V 2.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock380,760	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	2V @ 1mA	6.4nC @ 4.5V	580pF @ 10V	±12V	-	1.25W (Ta)	100 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RW1C020UNT2R	Rohm Semiconductor	MOSFET N-CH 20V 2A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock36,000	MOSFET (Metal Oxide)	20V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	2nC @ 4.5V	180pF @ 10V	±10V	-	400mW (Ta)	105 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
ES6U42T2R	Rohm Semiconductor	MOSFET P-CH 20V 1A WEMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,264	MOSFET (Metal Oxide)	20V	1A (Ta)	2.5V, 4.5V	2V @ 1mA	2.1nC @ 4.5V	150pF @ 10V	±12V	Schottky Diode (Body)	700mW (Ta)	390 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
RTQ020N05TR	Rohm Semiconductor	MOSFET N-CH 45V 2A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock396,372	MOSFET (Metal Oxide)	45V	2A (Ta)	2.5V, 4.5V	1.5V @ 1mA	2.3nC @ 4.5V	150pF @ 10V	±12V	-	600mW (Ta)	190 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RW1C015UNT2R	Rohm Semiconductor	MOSFET N-CH 20V 1.5A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock96,000	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.5V, 4.5V	1V @ 1mA	1.8nC @ 4.5V	110pF @ 10V	±10V	-	400mW (Ta)	180 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
RAL035P01TCR	Rohm Semiconductor	MOSFET P-CH 12V 3.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock7,024	MOSFET (Metal Oxide)	12V	3.5A (Ta)	1.5V, 4.5V	1V @ 1mA	22nC @ 4.5V	2700pF @ 6V	-8V	-	1W (Ta)	42 mOhm @ 3.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
RTR011P02TL	Rohm Semiconductor	MOSFET P-CH 20V 1.1A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock5,712	MOSFET (Metal Oxide)	20V	1.1A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	TSMT3	SC-96
RSF010P05TL	Rohm Semiconductor	MOSFET P-CH 45V 1A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 460 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock36,000	MOSFET (Metal Oxide)	45V	1A (Ta)	4V, 10V	2.5V @ 1mA	2.3nC @ 5V	160pF @ 10V	±20V	-	800mW (Ta)	460 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
RRQ020P03TCR	Rohm Semiconductor	MOSFET P-CH 30V 2A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock396,360	MOSFET (Metal Oxide)	30V	2A (Ta)	4V, 10V	2.5V @ 1mA	3.2nC @ 5V	230pF @ 10V	±20V	-	1.25W (Ta)	160 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
ES6U41T2R	Rohm Semiconductor	MOSFET N-CH 30V 1.5A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock5,824	MOSFET (Metal Oxide)	30V	1.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	2.2nC @ 4.5V	80pF @ 10V	±12V	Schottky Diode (Isolated)	700mW (Ta)	240 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
RAQ045P01MGTCR	Rohm Semiconductor	1.5V DRIVE PCH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,656	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RSF015N06TL	Rohm Semiconductor	MOSFET N-CH 60V 1.5A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 290 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock45,240	MOSFET (Metal Oxide)	60V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	2nC @ 5V	110pF @ 10V	20V	-	800mW (Ta)	290 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
ES6U2T2R	Rohm Semiconductor	MOSFET N-CH 20V 1.5A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): ±10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,648	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.5V, 4.5V	1V @ 1mA	1.8nC @ 4.5V	110pF @ 10V	±10V	Schottky Diode (Isolated)	700mW (Ta)	180 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666