Page 50 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STW9NK70Z
STMicroelectronics

MOSFET N-CH 700V 7.5A TO-247

Package: TO-247-3

Stock101,916
STP150N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A TO220

Package: TO-220-3

Stock4,560
STF12N65M5
STMicroelectronics

MOSFET N-CH 650V 8.5A TO-220FP

Package: TO-220-5 Full Pack

Stock14,616
STP9NK70ZFP
STMicroelectronics

MOSFET N-CH 700V 7.5A TO-220FP

Package: TO-220-3 Full Pack

Stock331,692
STF10NM60ND
STMicroelectronics

MOSFET N-CH 600V 8A TO-220FP

Package: TO-220-3 Full Pack

Stock17,448
STW13N60M2
STMicroelectronics

MOSFET N-CH 600V 11A TO-247

Package: TO-247-3

Stock7,392
STP10NM60ND
STMicroelectronics

MOSFET N-CH 600V 8A TO-220

Package: TO-220-3

Stock4,976
STF10N95K5
STMicroelectronics

MOSFET N-CH 950V 8A TO-220FP

Package: TO-220-3 Full Pack

Stock60,000
STP110N55F6
STMicroelectronics

MOSFET N CH 55V 110A TO-220

Package: TO-220-3

Stock828,564
STB60NF10-1
STMicroelectronics

MOSFET N-CH 100V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock168,684
STF10NK50Z
STMicroelectronics

MOSFET N-CH 500V 9A TO220FP

Package: TO-220-3 Full Pack

Stock136,272
STP16N50M2
STMicroelectronics

MOSFET N-CH 500V 13A TO-220AB

Package: TO-220-3

Stock8,364
STF11NM50N
STMicroelectronics

MOSFET N-CH 500V 8.5A TO-220FP

Package: TO-220-3 Full Pack

Stock482,364
STF16N65M2
STMicroelectronics

MOSFET N-CH 650V 11A TO220FP

Package: TO-220-3 Full Pack

Stock20,016
STP16N65M2
STMicroelectronics

MOSFET N-CH 650V 11A TO-220AB

Package: TO-220-3

Stock22,428
STF18N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220FP

Package: TO-220-3 Full Pack

Stock15,084
STP18N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220

Package: TO-220-3

Stock9,648
STFI5N95K3
STMicroelectronics

MOSFET N-CH 950V 4A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock13,728
STF110N10F7
STMicroelectronics

MOSFET N-CH 100V TO-220FP

Package: TO-220-3 Full Pack

Stock8,472
STF12N50M2
STMicroelectronics

MOSFET N-CH 500V 10A TO220FP

Package: TO-220-3 Full Pack

Stock21,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STW9NK70Z	STMicroelectronics	MOSFET N-CH 700V 7.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock101,916	MOSFET (Metal Oxide)	700V	7.5A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1370pF @ 25V	±30V	-	156W (Tc)	1.2 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP150N3LLH6	STMicroelectronics	MOSFET N-CH 30V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,560	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	40nC @ 4.5V	4040pF @ 25V	±20V	-	110W (Tc)	3.3 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF12N65M5	STMicroelectronics	MOSFET N-CH 650V 8.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-5 Full Pack	Package: TO-220-5 Full Pack	Stock14,616	MOSFET (Metal Oxide)	650V	8.5A (Tc)	10V	5V @ 250µA	22nC @ 10V	900pF @ 100V	±25V	-	25W (Tc)	430 mOhm @ 4.3A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-5 Full Pack
STP9NK70ZFP	STMicroelectronics	MOSFET N-CH 700V 7.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock331,692	MOSFET (Metal Oxide)	700V	7.5A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1370pF @ 25V	±30V	-	35W (Tc)	1.2 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF10NM60ND	STMicroelectronics	MOSFET N-CH 600V 8A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,448	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4V @ 250µA	19nC @ 10V	540pF @ 50V	±25V	-	25W (Tc)	550 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW13N60M2	STMicroelectronics	MOSFET N-CH 600V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,392	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	17nC @ 10V	580pF @ 100V	±25V	-	110W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP10NM60ND	STMicroelectronics	MOSFET N-CH 600V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 577pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,976	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	20nC @ 10V	577pF @ 50V	±25V	-	70W (Tc)	600 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF10N95K5	STMicroelectronics	MOSFET N-CH 950V 8A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock60,000	MOSFET (Metal Oxide)	950V	8A (Tc)	10V	5V @ 100µA	22nC @ 10V	630pF @ 100V	±30V	-	30W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP110N55F6	STMicroelectronics	MOSFET N CH 55V 110A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock828,564	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	120nC @ 10V	8350pF @ 25V	±20V	-	150W (Tc)	5.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STB60NF10-1	STMicroelectronics	MOSFET N-CH 100V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock168,684	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	104nC @ 10V	4270pF @ 25V	±20V	-	300W (Tc)	23 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STF10NK50Z	STMicroelectronics	MOSFET N-CH 500V 9A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1219pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock136,272	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4.5V @ 100µA	39.2nC @ 10V	1219pF @ 25V	±30V	-	30W (Tc)	700 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP16N50M2	STMicroelectronics	MOSFET N-CH 500V 13A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock8,364	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	19.5nC @ 10V	710pF @ 100V	±25V	-	110W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF11NM50N	STMicroelectronics	MOSFET N-CH 500V 8.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock482,364	MOSFET (Metal Oxide)	500V	8.5A (Tc)	10V	4V @ 250µA	19nC @ 10V	547pF @ 50V	±25V	-	25W (Tc)	470 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF16N65M2	STMicroelectronics	MOSFET N-CH 650V 11A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,016	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	4V @ 250µA	19.5nC @ 10V	718pF @ 100V	±25V	-	25W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP16N65M2	STMicroelectronics	MOSFET N-CH 650V 11A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock22,428	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	4V @ 250µA	19.5nC @ 10V	718pF @ 100V	±25V	-	110W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STF18N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock15,084	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	791pF @ 100V	±25V	-	25W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP18N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock9,648	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	791pF @ 100V	±25V	-	110W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STFI5N95K3	STMicroelectronics	MOSFET N-CH 950V 4A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock13,728	MOSFET (Metal Oxide)	950V	4A (Tc)	10V	5V @ 100µA	19nC @ 10V	460pF @ 25V	±30V	-	25W (Tc)	3.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STF110N10F7	STMicroelectronics	MOSFET N-CH 100V TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5117pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,472	MOSFET (Metal Oxide)	100V	45A (Tc)	10V	4.5V @ 250µA	72nC @ 10V	5117pF @ 50V	±20V	-	30W (Tc)	7 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF12N50M2	STMicroelectronics	MOSFET N-CH 500V 10A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock21,000	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	15nC @ 10V	560pF @ 100V	±25V	-	85W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STI76NF75	STMicroelectronics	MOSFET N-CH 75V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock14,976	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	160nC @ 10V	3700pF @ 25V	±20V	-	300W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP12N50M2	STMicroelectronics	MOSFET N-CH 500V 10A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,176	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	15nC @ 10V	560pF @ 100V	±25V	-	85W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STU16N65M2	STMicroelectronics	MOSFET N-CH 650V 11A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock17,556	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	4V @ 250µA	19.5nC @ 10V	718pF @ 100V	±25V	-	110W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STP141NF55	STMicroelectronics	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock462,024	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	142nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF10NM50N	STMicroelectronics	MOSFET N-CH 500V 7.0A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock397,380	MOSFET (Metal Oxide)	500V	7A (Tc)	10V	4V @ 250µA	17nC @ 10V	450pF @ 50V	±25V	-	25W (Tc)	630 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STI45N10F7	STMicroelectronics	MOSFET N-CH 100V 45A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock18,888	MOSFET (Metal Oxide)	100V	45A (Tc)	10V	4.5V @ 250µA	25nC @ 10V	1640pF @ 50V	20V	-	60W (Tc)	18 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
STP13N60M2	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,224	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	17nC @ 10V	580pF @ 100V	±25V	-	110W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP95N4F3	STMicroelectronics	MOSFET N-CH 40V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock460,608	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	54nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	6.2 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3