Page 51 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STS6P3LLH6
STMicroelectronics

MOSFET P-CH 30V 6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,296
STN4NF03L
STMicroelectronics

MOSFET N-CH 30V 6.5A SOT223

Package: TO-261-4, TO-261AA

Stock1,330,308
STD3NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 2.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock639,432
STD9N40M2
STMicroelectronics

MOSFET N-CH 400V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,728
STD10P10F6
STMicroelectronics

MOSFET P-CH 100V 10A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock29,880
STD75N3LLH6
STMicroelectronics

MOSFET N-CH 30V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock871,740
STL62P3LLH6
STMicroelectronics

MOSFET P-CH 30V 62A 8POWERFLAT

Package: 8-PowerSMD, Flat Leads

Stock6,672
STS6NF20V
STMicroelectronics

MOSFET N-CH 20V 6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock172,488
STN4NF06L
STMicroelectronics

MOSFET N-CH 60V 4A SOT-223

Package: TO-261-4, TO-261AA

Stock263,892
STL51N3LLH5
STMicroelectronics

MOSFET N-CH 30V 51A POWERFLAT56

Package: 8-PowerSMD, Flat Leads

Stock5,360
STQ3N45K3-AP
STMicroelectronics

MOSFET N-CH 450V 600MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,216
STD27N3LH5
STMicroelectronics

MOSFET N-CH 30V 27A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock183,888
STS12N3LLH5
STMicroelectronics

MOSFET N-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock475,920
STW57N65M5-4
STMicroelectronics

MOSFET N CH 650V 42A TO247-4

Package: TO-247-4

Stock6,224
STY130NF20D
STMicroelectronics

MOSFET N-CH 200V 130A MAX247

Package: TO-247-3

Stock5,392
STF57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A TO-220FP

Package: TO-220-3 Full Pack

Stock3,968
STW43NM60N
STMicroelectronics

MOSFET N-CH 600V 35A TO-247

Package: TO-247-3

Stock9,444
STW21N65M5
STMicroelectronics

MOSFET N-CH 650V 17A TO-247

Package: TO-247-3

Stock397,536
STW15NM60N
STMicroelectronics

MOSFET N-CH 600V 14A TO-247

Package: TO-247-3

Stock14,604
STP28NM60ND
STMicroelectronics

MOSFET N-CH 600V 23A TO220

Package: TO-220-3

Stock6,912

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STS6P3LLH6	STMicroelectronics	MOSFET P-CH 30V 6A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,296	MOSFET (Metal Oxide)	30V	6A (Ta)	4.5V, 10V	1V @ 250µA (Min)	12nC @ 4.5V	1450pF @ 24V	±20V	-	2.7W (Ta)	30 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STN4NF03L	STMicroelectronics	MOSFET N-CH 30V 6.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.3W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,330,308	MOSFET (Metal Oxide)	30V	6.5A (Tc)	5V, 10V	1V @ 250µA	9nC @ 10V	330pF @ 25V	±16V	-	3.3W (Tc)	50 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STD3NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 2.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock639,432	MOSFET (Metal Oxide)	500V	2.3A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	3.3 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD9N40M2	STMicroelectronics	MOSFET N-CH 400V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,728	MOSFET (Metal Oxide)	400V	6A (Tc)	10V	4V @ 250µA	8.8nC @ 10V	270pF @ 100V	±25V	-	60W (Tc)	800 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD10P10F6	STMicroelectronics	MOSFET P-CH 100V 10A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 80V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock29,880	MOSFET (Metal Oxide)	100V	10A (Tc)	10V	4V @ 250µA	16.5nC @ 10V	864pF @ 80V	±20V	-	40W (Tc)	180 mOhm @ 5A, 10V	175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD75N3LLH6	STMicroelectronics	MOSFET N-CH 30V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock871,740	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	2.5V @ 250µA	17nC @ 4.5V	1690pF @ 25V	±20V	-	60W (Tc)	5.5 mOhm @ 37.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL62P3LLH6	STMicroelectronics	MOSFET P-CH 30V 62A 8POWERFLAT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 7A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock6,672	MOSFET (Metal Oxide)	30V	62A (Tc)	4.5V, 10V	1V @ 250µA (Min)	33nC @ 4.5V	3350pF @ 25V	±20V	-	100W (Tc)	10.5 mOhm @ 7A, 10V	175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STS6NF20V	STMicroelectronics	MOSFET N-CH 20V 6A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock172,488	MOSFET (Metal Oxide)	20V	6A (Tc)	1.95V, 4.5V	600mV @ 250µA	11.5nC @ 4.5V	460pF @ 15V	±12V	-	2.5W (Tc)	40 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STN4NF06L	STMicroelectronics	MOSFET N-CH 60V 4A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.3W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock263,892	MOSFET (Metal Oxide)	60V	4A (Tc)	5V, 10V	2.8V @ 250µA	9nC @ 5V	340pF @ 25V	±16V	-	3.3W (Tc)	100 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STL51N3LLH5	STMicroelectronics	MOSFET N-CH 30V 51A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,360	MOSFET (Metal Oxide)	30V	51A (Tc)	4.5V, 10V	2.5V @ 250µA	5nC @ 4.5V	724pF @ 25V	±22V	-	62.5W (Tc)	14.5 mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STQ3N45K3-AP	STMicroelectronics	MOSFET N-CH 450V 600MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,216	MOSFET (Metal Oxide)	450V	600mA (Tc)	10V	4.5V @ 50µA	6nC @ 10V	150pF @ 25V	±30V	-	3W (Tc)	3.8 Ohm @ 500mA, 10V	150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STD27N3LH5	STMicroelectronics	MOSFET N-CH 30V 27A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock183,888	MOSFET (Metal Oxide)	30V	27A (Tc)	4.5V, 10V	1V @ 250µA	4.6nC @ 5V	475pF @ 25V	±22V	-	30W (Tc)	19 mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STS12N3LLH5	STMicroelectronics	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V Vgs (Max): +22V, -20V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock475,920	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	1V @ 250µA	8nC @ 4.5V	1290pF @ 25V	+22V, -20V	-	2.7W (Tc)	7.5 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STW57N65M5-4	STMicroelectronics	MOSFET N CH 650V 42A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: TO-247-4	Stock6,224	MOSFET (Metal Oxide)	650V	42A (Tc)	10V	5V @ 250µA	98nC @ 10V	4200pF @ 100V	±25V	-	250W (Tc)	63 mOhm @ 21A, 10V	150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
STY130NF20D	STMicroelectronics	MOSFET N-CH 200V 130A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock5,392	MOSFET (Metal Oxide)	200V	130A (Tc)	10V	4V @ 250µA	338nC @ 10V	11100pF @ 25V	±20V	-	450W (Tc)	12 mOhm @ 65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	MAX247?	TO-247-3
STF57N65M5	STMicroelectronics	MOSFET N-CH 650V 42A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,968	MOSFET (Metal Oxide)	650V	42A (Tc)	10V	5V @ 250µA	98nC @ 10V	4200pF @ 100V	±25V	-	40W (Tc)	63 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW43NM60N	STMicroelectronics	MOSFET N-CH 600V 35A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,444	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 250µA	130nC @ 10V	4200pF @ 50V	±30V	-	255W (Tc)	88 mOhm @ 17.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW21N65M5	STMicroelectronics	MOSFET N-CH 650V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock397,536	MOSFET (Metal Oxide)	650V	17A (Tc)	10V	5V @ 250µA	50nC @ 10V	1950pF @ 100V	±25V	-	125W (Tc)	190 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock14,604	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 250µA	37nC @ 10V	1250pF @ 50V	±25V	-	125W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP28NM60ND	STMicroelectronics	MOSFET N-CH 600V 23A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 11.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,912	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	5V @ 250µA	62.5nC @ 10V	2090pF @ 100V	±25V	-	190W (Tc)	150 mOhm @ 11.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STB21NM50N-1	STMicroelectronics	MOSFET N-CH 500V 18A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock18,492	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	4V @ 250µA	65nC @ 10V	1950pF @ 25V	±25V	-	140W (Tc)	190 mOhm @ 9A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP210N75F6	STMicroelectronics	MOSFET N-CH 75V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock52,032	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 250µA	171nC @ 10V	11800pF @ 25V	±20V	-	300W (Tc)	3.7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STF15N95K5	STMicroelectronics	MOSFET N-CH 950V 12A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,400	MOSFET (Metal Oxide)	950V	12A (Tc)	10V	5V @ 100µA	40nC @ 10V	900pF @ 100V	±30V	-	30W (Tc)	500 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP14NM65N	STMicroelectronics	MOSFET N-CH 650V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,060	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	45nC @ 10V	1300pF @ 50V	±25V	-	125W (Tc)	380 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STI22NM60N	STMicroelectronics	MOSFET N-CH 600V 16A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,032	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	44nC @ 10V	1330pF @ 50V	±30V	-	125W (Tc)	220 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP150NF04	STMicroelectronics	MOSFET N-CH 40V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock903,636	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	3650pF @ 25V	±20V	-	300W (Tc)	7 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP10NK70Z	STMicroelectronics	MOSFET N-CH 700V 8.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,040	MOSFET (Metal Oxide)	700V	8.6A (Tc)	10V	4.5V @ 100µA	90nC @ 10V	2000pF @ 25V	±30V	-	150W (Tc)	850 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF7N95K3	STMicroelectronics	MOSFET N-CH 950V 7.2A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock23,616	MOSFET (Metal Oxide)	950V	7.2A (Tc)	10V	5V @ 100µA	33nC @ 10V	1031pF @ 100V	±30V	-	35W (Tc)	1.35 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack