|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock4,192 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,184 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N -CH 600V 30.8A DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V
- Operating Temperature: 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
|
Package: 4-VSFN Exposed Pad |
Stock19,758 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SSM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock3,504 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A USM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock139,338 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock5,328 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE VARACTOR 15V USC
- Capacitance @ Vr, F: 2pF @ 10V, 1MHz
- Capacitance Ratio: 2.4
- Capacitance Ratio Condition: C2/C10
- Voltage - Peak Reverse (Max): 15V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
|
Package: SC-76, SOD-323 |
Stock142,524 |
|
|
|
Toshiba Semiconductor and Storage |
IC EEPROM 8GBIT 25NS 67VFBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 8Gb (1G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 67-VFBGA
- Supplier Device Package: 67-VFBGA (6.5x8)
|
Package: 67-VFBGA |
Stock7,536 |
|
|
|
Toshiba Semiconductor and Storage |
IC MULTIPLEXER QUAD 2-CH 16TSSOP
- Type: Multiplexer
- Circuit: 4 x 2:1
- Independent Circuits: 1
- Current - Output High, Low: 24mA, 24mA
- Voltage Supply Source: Single Supply
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
Package: 16-TSSOP (0.173", 4.40mm Width) |
Stock5,104 |
|
|
|
Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14SOP
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 3 V ~ 18 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 3.4mA, 3.4mA
- Logic Level - Low: 1.5 V ~ 4 V
- Logic Level - High: 3.5 V ~ 11 V
- Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOP
- Package / Case: 14-SOIC (0.209", 5.30mm Width)
|
Package: 14-SOIC (0.209", 5.30mm Width) |
Stock19,056 |
|
|
|
Toshiba Semiconductor and Storage |
IC C0MP GP CMOS PUSH-PULL SMV
- Type: General Purpose
- Number of Elements: 1
- Output Type: Push-Pull
- Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
- Voltage - Input Offset (Max): 1mV @ 5V
- Current - Input Bias (Max): 1pA @ 5V
- Current - Output (Typ): 25mA
- Current - Quiescent (Max): 22µA
- CMRR, PSRR (Typ): -
- Propagation Delay (Max): 680ns
- Hysteresis: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: SC-74A, SOT-753
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
|
Package: SC-74A, SOT-753 |
Stock25,074 |
|
|
|
Toshiba Semiconductor and Storage |
TXRX MOD OPTICAL 10MBPS 650NM
- Data Rate: 10Mbps
- Wavelength: 650nm
- Applications: General Purpose
- Voltage - Supply: 4.75 V ~ 5.25 V
- Connector Type: JIS F07
- Mounting Type: Through Hole
|
Package: - |
Stock6,048 |
|
|
|
Toshiba Semiconductor and Storage |
BLUETOOTH V4.1 LOW ENERGY STANDA
- Type: -
- RF Family/Standard: -
- Protocol: -
- Modulation: -
- Frequency: -
- Data Rate (Max): -
- Power - Output: -
- Sensitivity: -
- Memory Size: -
- Serial Interfaces: -
- GPIO: -
- Voltage - Supply: -
- Current - Receiving: -
- Current - Transmitting: -
- Operating Temperature: -
- Package / Case: 40-VFQFN Exposed Pad
|
Package: 40-VFQFN Exposed Pad |
Stock4,428 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTOCOUPLER PHOTORELAY 6-DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 100 mOhm
- Load Current: 2.5A
- Voltage - Input: 1.33VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
- Supplier Device Package: 6-DIP (Cut), 5 Lead
- Relay Type: Relay
|
Package: 6-DIP (0.300", 7.62mm), 5 Leads |
Stock26,556 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 2.5KV 2CH PUSH PULL 8SO
- Number of Channels: 2
- Inputs - Side 1/Side 2: 2/0
- Voltage - Isolation: 2500Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 10mA
- Data Rate: 15MBd
- Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
- Rise / Fall Time (Typ): 3ns, 3ns
- Voltage - Forward (Vf) (Typ): 1.5V
- Current - DC Forward (If) (Max): 10mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock148,584 |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR ARRAY INTERFACE DRIVE
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 8:8
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: -
- Voltage - Load: 0 ~ 50 V
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Current - Output (Max): 500mA
- Rds On (Typ): 1 Ohm
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 18-SOP
|
Package: 18-SOIC (0.295", 7.50mm Width) |
Stock16,608 |
|
|
|
Toshiba Semiconductor and Storage |
ISO AMP ANALOG OUTPUT GAIN SAFE
- Amplifier Type: Isolation
- Number of Circuits: 1
- Output Type: Differential
- Slew Rate: -
- Gain Bandwidth Product: -
- -3db Bandwidth: 230kHz
- Current - Input Bias: 5.5nA
- Voltage - Input Offset: 730µV
- Current - Supply: 12mA
- Current - Output / Channel: -
- Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock6,992 |
|
|
|
Toshiba Semiconductor and Storage |
X34 L-MOS LVP SERIES BUFFER 3-ST
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: 3-State
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 0.9V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-953
- Supplier Device Package: fSV
|
Package: SOT-953 |
Stock203,868 |
|
|
|
Toshiba Semiconductor and Storage |
200MA LDO VOUT=0.95V DROPOUT=200
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.95V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.46V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 2µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
|
Package: 4-XFDFN Exposed Pad |
Stock4,640 |
|
|
|
Toshiba Semiconductor and Storage |
200MA LDO VOUT1.3V DROPOUT220MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock4,960 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 20V 2W MFLAT
- Voltage - Zener (Nom) (Vz): 20 V
- Tolerance: ±10%
- Power - Max: 2 W
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 14 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
|
Package: - |
Stock8,700 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: - |
Stock15,507 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 1.8V 300MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.464V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680 nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock22,500 |
|
|
|
Toshiba Semiconductor and Storage |
IC PWR RELAY 7NPN 1:1 16SOL
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 1.25W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOL
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
IC ELECTRONIC FUSE 10WSON
- Function: Electronic Fuse
- Sensing Method: -
- Accuracy: -
- Voltage - Input: 4.4V ~ 18V
- Current - Output: 5A
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-WSONB (3x3)
|
Package: - |
Stock121,023 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 6.2V 700MW SFLAT
- Voltage - Zener (Nom) (Vz): 6.2 V
- Tolerance: ±9.68%
- Power - Max: 700 mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 3 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
|
Package: - |
Stock7,800 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 157W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock29,772 |
|