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Toshiba Semiconductor and Storage |
IGBT 600V 10A 60W TO220SM
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 10A
- Current - Collector Pulsed (Icm): 20A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 60W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 400ns/400ns
- Test Condition: 300V, 10A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 200ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-220SM
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,992 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: DP
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,600 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 8A TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)IS
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock5,424 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A T0247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock21,132 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH SMQ
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: 22.5dB
- Voltage - Test: 6V
- Current Rating: 30mA
- Noise Figure: 2.5dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 12.5V
- Package / Case: SC-61AA
- Supplier Device Package: SMQ
|
Package: SC-61AA |
Stock54,072 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock58,632 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock4,304 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock27,378 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC59-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
- Operating Temperature - Junction: 125°C (Max)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock30,000 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 150MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock6,688 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR POS ADJ 1A 5HSIP
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 1.5V
- Voltage - Output (Max): 9V
- Voltage Dropout (Max): 0.5V @ 500mA
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1.7mA ~ 20mA
- PSRR: 63dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-6, DPak (5 Leads + Tab)
- Supplier Device Package: 5-HSIP
|
Package: TO-252-6, DPak (5 Leads + Tab) |
Stock4,944 |
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Toshiba Semiconductor and Storage |
IC REG BUCK 3.3V 1A SYNC 8SON
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Fixed
- Number of Outputs: 1
- Voltage - Input (Min): 4.3V
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Current - Output: 1A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: PS-8 (2.9x2.4)
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Package: 8-SMD, Flat Lead |
Stock68,400 |
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Toshiba Semiconductor and Storage |
IC LOAD SWITCH 7CH 0.3A 16DIP
- Switch Type: General Purpose
- Number of Outputs: 7
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.75A
- Rds On (Typ): -
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
|
Package: 16-DIP (0.300", 7.62mm) |
Stock7,668 |
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Toshiba Semiconductor and Storage |
IC PWR SWITCH P-CHAN 1:1 WCSP6E
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.4 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): 1.54A
- Rds On (Typ): 31 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge
- Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSPE (0.80x1.2)
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Package: 6-UFBGA, WLCSP |
Stock48,708 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14-TSSOP
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 3.6 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 4mA, 4mA
- Logic Level - Low: 0.5 V ~ 0.8 V
- Logic Level - High: 1.5 V ~ 2.4 V
- Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
|
Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock3,456 |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INV DUAL 6SSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.8 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,824 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 20VC
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 20V
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: 40W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.2pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: SL2
|
Package: 0201 (0603 Metric) |
Stock4,842 |
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Toshiba Semiconductor and Storage |
TVS DIODE 23VWM
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 23V (Max)
- Voltage - Breakdown (Min): 28V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 7pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
|
Package: SOD-923 |
Stock945,546 |
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Toshiba Semiconductor and Storage |
OPTOISO 2.5KV TRANS W/BASE 6DIP
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): 40% @ 10mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: 100mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
|
Package: 6-DIP (0.300", 7.62mm) |
Stock3,834 |
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Toshiba Semiconductor and Storage |
200MA LDO VOUT1.4V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,096 |
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Toshiba Semiconductor and Storage |
200MA LDO VOUT1.25V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock4,896 |
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Toshiba Semiconductor and Storage |
LOW DROPOUT (LDO) LINEAR VOLTAGE
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.327V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
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Package: 4-UDFN Exposed Pad |
Stock3,280 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: - |
Stock17,640 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1.8V 300MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.464V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680 nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Package: - |
Stock21,660 |
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Toshiba Semiconductor and Storage |
TRANSISTOR NPN TO-3PN
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock150 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock23,532 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 18A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
|
Package: - |
Stock14,850 |
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