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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.7A TSM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 413pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSM
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock35,436 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 525V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,128 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 35A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,816 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,904 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,736 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock28,476 |
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Toshiba Semiconductor and Storage |
TRANS PNP 30V 0.5A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 100mW
- Frequency - Transition: 200MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock3,440 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP 50V 0.15A SMV
- Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Package: SC-74A, SOT-753 |
Stock6,160 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA ESV
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.6ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Package: SOT-553 |
Stock32,328 |
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Toshiba Semiconductor and Storage |
IC LOAD SWITCH 7CH 0.5A 16DIP
- Switch Type: General Purpose
- Number of Outputs: 7
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.8A
- Rds On (Typ): -
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
|
Package: 16-DIP (0.300", 7.62mm) |
Stock17,172 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 16SSOP
- Motor Type - Stepper: Unipolar
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: 1, 1/2
- Applications: General Purpose
- Current - Output: 1A
- Voltage - Supply: 2.7 V ~ 5.5 V
- Voltage - Load: 2.5 V ~ 15 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-SSOP
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Package: 16-LSSOP (0.173", 4.40mm Width) |
Stock7,712 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 48QFN
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: PWM
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 2A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Package: 48-VFQFN Exposed Pad |
Stock7,152 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 16SSOP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 800mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Voltage - Load: 2.5 V ~ 15 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-SSOP
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Package: 16-LSSOP (0.173", 4.40mm Width) |
Stock7,696 |
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Toshiba Semiconductor and Storage |
IC EEPROM 1GBIT 25NS 63FBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-TFBGA (9x11)
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Package: 63-VFBGA |
Stock4,048 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 1CH 2-INP SMV
- Logic Type: NAND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: Open Drain
- Voltage - Supply: 1.65 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: -, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock3,696 |
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Toshiba Semiconductor and Storage |
IC DRIVER DARL SINK 8-CH 18-SSOP
- Type: Driver
- Protocol: -
- Number of Drivers/Receivers: 8/0
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 5V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 18-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 18-SSOP
|
Package: 18-LSSOP (0.173", 4.40mm Width) |
Stock2,112 |
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Toshiba Semiconductor and Storage |
IC DRIVER DARL SNK TTL 7CH 16DIP
- Type: Driver
- Protocol: -
- Number of Drivers/Receivers: 7/0
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 0 V ~ 50 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
|
Package: 16-DIP (0.300", 7.62mm) |
Stock4,352 |
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Toshiba Semiconductor and Storage |
TVS DIODE 12VWM
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 12V
- Voltage - Breakdown (Min): 15.3V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 10pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: CST2
|
Package: SOD-882 |
Stock77,208 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 2.5KV PHVOLT 6-DIP
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 200µs, 3ms
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Photovoltaic
- Voltage - Output (Max): 7V
- Current - Output / Channel: 24µA
- Voltage - Forward (Vf) (Typ): 1.4V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): -
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
- Supplier Device Package: 6-DIP, 5 Lead
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Package: 6-DIP (0.300", 7.62mm), 5 Leads |
Stock17,160 |
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Toshiba Semiconductor and Storage |
TRANSISTOR ARRAY INTERFACE DRIVE
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
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Package: 18-DIP (0.300", 7.62mm) |
Stock16,350 |
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Toshiba Semiconductor and Storage |
3 PHASE BLDC CONTROLLER
- Motor Type - Stepper: Multiphase
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Controller - Speed
- Output Configuration: High Side, Low Side
- Interface: PWM
- Technology: -
- Step Resolution: -
- Applications: Fan Controller
- Current - Output: 2mA
- Voltage - Supply: 6V ~ 16.5V
- Voltage - Load: 4.5V ~ 5.3V
- Operating Temperature: -40°C ~ 115°C
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-VQFN (5x5)
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Package: 32-VFQFN Exposed Pad |
Stock30,276 |
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Toshiba Semiconductor and Storage |
MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 120MHz
- Connectivity: I2C, SPI, UART/USART
- Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
- Number of I/O: 57
- Program Memory Size: 512KB (512K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 64K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 12x12b SAR; D/A 2x8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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Package: - |
Stock4,800 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A 6UDFNB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q TR NPN+PNP Q1BSR=47KO
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock24,000 |
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Toshiba Semiconductor and Storage |
NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Package: - |
Stock315 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 46A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
IC
- Type: Linear
- Topology: Shift Register
- Internal Switch(s): No
- Number of Outputs: 16
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 17V
- Current - Output / Channel: 90mA
- Frequency: -
- Dimming: No
- Applications: LED Lighting
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-SSOP (0.154", 3.90mm Width)
- Supplier Device Package: 24-SSOP
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
PNP + NPN BRT Q1BSR4.7KOHM Q1BER
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock990 |
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