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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,704 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 26A SOP8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,352 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 60V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock4,496 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 120V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
- Power - Max: 900mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock4,384 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V SC71
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock5,072 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,320 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ESV
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Package: SOT-553 |
Stock3,696 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SMV
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock22,548 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.2W US6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,100 |
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Toshiba Semiconductor and Storage |
DIODE SW GP 80V 100MA ESC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10nA @ 80V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SC-79
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-79, SOD-523 |
Stock80,424 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 150MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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Package: TO-226-3, TO-92-3 Long Body |
Stock5,344 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 250MA 3HSIP
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: 3-HSIP
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Package: TO-220-3 Full Pack |
Stock2,032 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.8V 200MA 4WCSP
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 70µA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLCSP
- Supplier Device Package: 4-WCSP (0.79x0.79)
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Package: 4-XFBGA, WLCSP |
Stock26,082 |
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Toshiba Semiconductor and Storage |
IC LOAD SWITCH 8CH 0.5A 18DIP
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.8A
- Rds On (Typ): -
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
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Package: 18-DIP (0.300", 7.62mm) |
Stock7,992 |
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Toshiba Semiconductor and Storage |
X34 PB-F LCX TSSOP 20 CMOS LOGIC
- Logic Type: D-Type Latch
- Circuit: 8:8
- Output Type: Tri-State
- Voltage - Supply: 1.65 V ~ 3.6 V
- Independent Circuits: 1
- Delay Time - Propagation: 8ns
- Current - Output High, Low: 24mA, 24mA
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOPB
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock48,420 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 1CH 2-INP ESV
- Logic Type: NAND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 32mA, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: ESV
- Package / Case: SOT-553
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Package: SOT-553 |
Stock31,782 |
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Toshiba Semiconductor and Storage |
IC INVERTER DUAL 4-INPUT 20TSSOP
- Logic Type: Buffer, Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 4mA, 4mA
- Voltage - Supply: 2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock5,008 |
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Toshiba Semiconductor and Storage |
IC INVERTER DUAL 1-INPUT 8SSOP
- Logic Type: Buffer, Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 6mA, 6mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
- Supplier Device Package: SM8
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Package: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
Stock58,266 |
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Toshiba Semiconductor and Storage |
IC COMP GP CMOS DUAL SM8
- Type: General Purpose
- Number of Elements: 2
- Output Type: Push-Pull
- Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
- Voltage - Input Offset (Max): 7mV @ 5V
- Current - Input Bias (Max): 1pA @ 5V
- Current - Output (Typ): 25mA
- Current - Quiescent (Max): 40µA
- CMRR, PSRR (Typ): -
- Propagation Delay (Max): 680ns
- Hysteresis: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
- Mounting Type: Surface Mount
- Supplier Device Package: SM8
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Package: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
Stock5,328 |
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Toshiba Semiconductor and Storage |
IC DRIVER DARL SNK 16HSOP
- Type: Driver
- Protocol: -
- Number of Drivers/Receivers: 4/0
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
- Supplier Device Package: 16-HSOP
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Package: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs |
Stock7,200 |
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Toshiba Semiconductor and Storage |
TRANSISTOR ARRAY INTERFACE DRIVE
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: 18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 18-SOP
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Package: 18-SOIC (0.295", 7.50mm Width) |
Stock16,944 |
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Toshiba Semiconductor and Storage |
3A/50V 1CH BRUSHED
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver
- Output Configuration: Half Bridge
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 3.5A
- Voltage - Supply: -
- Voltage - Load: 4.5V ~ 44V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-HSOP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock2,224 |
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Toshiba Semiconductor and Storage |
IC REG LIN 1V 500MA 5DFNB
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.14V @ 500mA
- Current - Output: 500mA
- Current - Quiescent (Iq): 36µA
- Current - Supply (Max): -
- PSRR: 98dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
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Package: 4-XDFN Exposed Pad |
Stock42,444 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock17,007 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 40V 1A S-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60 µA @ 40 V
- Capacitance @ Vr, F: 35pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock8,562 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INVERT 3.6V US8
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 2
- Input Type: -
- Output Type: 3-State
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 0.9V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: US8
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Package: - |
Stock17,877 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Stock8,310 |
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