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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO220SM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock15,324 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 46A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,696 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 5A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.43 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,392 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A CST3B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V
- Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 215 mOhm @ 1A, 8V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CST3B
- Package / Case: 3-SMD, No Lead
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Package: 3-SMD, No Lead |
Stock85,272 |
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Toshiba Semiconductor and Storage |
TRANS NPN 3A 100V TO220-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock4,784 |
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Toshiba Semiconductor and Storage |
TRANS NPN 1A 160V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock7,088 |
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Toshiba Semiconductor and Storage |
TRANS NPN 12V 0.5A USM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
- Power - Max: 100mW
- Frequency - Transition: 130MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock4,096 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.2W SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock48,924 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock4,672 |
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Toshiba Semiconductor and Storage |
DIODE ZENER 7.5V 700MW SFLAT
- Voltage - Zener (Nom) (Vz): 7.5V
- Tolerance: ±10%
- Power - Max: 700mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 4.5V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
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Package: SOD-123F |
Stock3,440 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.8V 200MA 4-SDFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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Package: 4-XFDFN Exposed Pad |
Stock211,728 |
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Toshiba Semiconductor and Storage |
IC PWR SWITCH P-CHAN 1:1 WCSP6E
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.1 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 31 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Over Temperature, Reverse Current, UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSPE (0.80x1.2)
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Package: 6-UFBGA, WLCSP |
Stock41,532 |
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Toshiba Semiconductor and Storage |
IC STEP MOTOR DRVR PAR 48WQFN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1 ~ 1/32
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 47 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-WFQFN Exposed Pad
- Supplier Device Package: 48-WQFN (7x7)
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Package: 48-WFQFN Exposed Pad |
Stock207,768 |
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Toshiba Semiconductor and Storage |
IC EEPROM 32GBIT 25NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 32Gb (4G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock8,292 |
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Toshiba Semiconductor and Storage |
IC OPAMP AUDIO 1CH 16TSSOP
- Type: Class AB
- Output Type: 1-Channel (Mono)
- Max Output Power x Channels @ Load: 3W x 1 @ 8 Ohm
- Voltage - Supply: 6 V ~ 16 V
- Features: Mute, Short-Circuit and Thermal Protection, Standby
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 110°C (TA)
- Supplier Device Package: 16-HSSOP
- Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
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Package: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad |
Stock16,626 |
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Toshiba Semiconductor and Storage |
IC DRIVER DARL SNK 16SOP
- Type: Driver
- Protocol: -
- Number of Drivers/Receivers: 7/0
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 16-SOP
|
Package: 16-SOIC (0.173", 4.40mm Width) |
Stock5,264 |
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Toshiba Semiconductor and Storage |
LED WHITE 2SMD
- Color: White
- Configuration: -
- Lens Color: -
- Lens Transparency: -
- Millicandela Rating: 3200mcd
- Lens Style/Size: Oval with Flat Top
- Voltage - Forward (Vf) (Typ): 3.5V
- Current - Test: 40mA
- Viewing Angle: -
- Mounting Type: Surface Mount
- Wavelength - Dominant: -
- Wavelength - Peak: -
- Features: -
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: SMD
- Size / Dimension: 3.20mm L x 2.90mm W
- Height (Max): 2.10mm
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Package: 2-SMD, J-Lead |
Stock2,520 |
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Toshiba Semiconductor and Storage |
OPTOISOLATR 5KV TRANSISTOR 6-DIP
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 100% @ 1mA
- Current Transfer Ratio (Max): 1200% @ 1mA
- Turn On / Turn Off Time (Typ): 10µs, 8µs
- Rise / Fall Time (Typ): 8µs, 8µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 55V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
|
Package: 6-DIP (0.300", 7.62mm) |
Stock6,408 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS 4-SO
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 300% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 4-SOIC (0.179", 4.55mm)
- Supplier Device Package: 4-SO
|
Package: 4-SOIC (0.179", 4.55mm) |
Stock2,664 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 500µA
- Current Transfer Ratio (Max): 600% @ 500µA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
|
Package: 16-SOIC (0.179", 4.55mm Width) |
Stock5,328 |
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Toshiba Semiconductor and Storage |
OPTOISO 2.5KV GATE DRIVER 8DIP
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Common Mode Transient Immunity (Min): 5kV/µs
- Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
- Pulse Width Distortion (Max): -
- Rise / Fall Time (Typ): -
- Current - Output High, Low: 500mA, 500mA
- Current - Peak Output: 1.5A
- Voltage - Forward (Vf) (Typ): 1.6V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -20°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
- Approvals: UR
|
Package: 8-DIP (0.300", 7.62mm) |
Stock124,056 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV GATE DRIVER 6SO-5
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 15kV/µs
- Propagation Delay tpLH / tpHL (Max): 170ns, 170ns
- Pulse Width Distortion (Max): -
- Rise / Fall Time (Typ): 35ns, 15ns
- Current - Output High, Low: 400mA, 400mA
- Current - Peak Output: 600mA
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
- Approvals: CSA, cUL, UL
|
Package: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Stock28,440 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX DUAL 4X1 16SOIC
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 150 Ohm
- Channel-to-Channel Matching (ΔRon): 6 Ohm
- Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
- Voltage - Supply, Dual (V±): ±1 V ~ 5 V
- Switch Time (Ton, Toff) (Max): 60ns, 48ns
- -3db Bandwidth: 180MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 3.5pF
- Current - Leakage (IS(off)) (Max): 2µA
- Crosstalk: -60dB @ 1MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
Package: 16-SOIC (0.154", 3.90mm Width) |
Stock295,020 |
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Toshiba Semiconductor and Storage |
16 CHANNEL CONSTANT CURRENT LED
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,296 |
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Toshiba Semiconductor and Storage |
IC DECODER 1 X 3:8 16DIP
- Type: Decoder
- Circuit: 1 x 3:8
- Independent Circuits: 1
- Current - Output High, Low: 75mA, 75mA
- Voltage Supply Source: Single Supply
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
|
Package: 16-DIP (0.300", 7.62mm) |
Stock4,240 |
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Toshiba Semiconductor and Storage |
AUTOMOTIVE BLDC MOTOR CONTROLLER
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (3)
- Interface: Parallel
- Technology: Bi-CMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: -
- Voltage - Supply: 5.5V ~ 18V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-LSSOP (0.220", 5.60mm Width)
- Supplier Device Package: 24-SSOP
|
Package: 24-LSSOP (0.220", 5.60mm Width) |
Stock21,168 |
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Toshiba Semiconductor and Storage |
LOW DROPOUT (LDO) LINEAR VOLTAGE
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.273V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 580nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
|
Package: 4-UDFN Exposed Pad |
Stock100,920 |
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Toshiba Semiconductor and Storage |
IC BRIDGE 64VFBGA
- Type: Bridge
- Applications: -
- Mounting Type: Surface Mount
- Package / Case: 64-VFBGA
- Supplier Device Package: 64-VFBGA (6x6)
|
Package: - |
Stock22,488 |
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