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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PW-MOLD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,928 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A 8SOP-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,288 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 300V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock8,064 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,192 |
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Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A SMINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock67,398 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock3,440 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock7,392 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SM6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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Package: SC-74, SOT-457 |
Stock2,016 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: L-FLAT? |
Stock6,736 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.7V 200MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.7V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock6,224 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1V 200MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock3,568 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 9SIP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: Bipolar
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 400mA
- Voltage - Supply: 4.5 V ~ 20 V
- Voltage - Load: 0 V ~ 20 V
- Operating Temperature: -30°C ~ 75°C (TA)
- Mounting Type: Through Hole
- Package / Case: 9-SIP
- Supplier Device Package: 9-SIP
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Package: 9-SIP |
Stock5,776 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 10HSIP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: Bipolar
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1A
- Voltage - Supply: 4.5 V ~ 20 V
- Voltage - Load: 0 V ~ 20 V
- Operating Temperature: -30°C ~ 75°C (TA)
- Mounting Type: Through Hole
- Package / Case: 10-SIP, Exposed Tab
- Supplier Device Package: 10-HSIP
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Package: 10-SIP, Exposed Tab |
Stock4,000 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 32VQFN
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel, PWM
- Technology: Bi-CMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1.5A
- Voltage - Supply: 10 V ~ 45 V
- Voltage - Load: 10 V ~ 45 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-VQFN (5x5)
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Package: 32-VFQFN Exposed Pad |
Stock21,996 |
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Toshiba Semiconductor and Storage |
IC MULTIVIBRATR 22NS 16SOP
- Logic Type: Monostable
- Independent Circuits: 2
- Schmitt Trigger Input: Yes
- Propagation Delay: 22ns
- Current - Output High, Low: 5.2mA, 5.2mA
- Voltage - Supply: 2 V ~ 6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 16-SOP
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Package: 16-SOIC (0.209", 5.30mm Width) |
Stock6,048 |
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Toshiba Semiconductor and Storage |
TRANSFERJET WIRELESS TRANSCEIVER
- Type: -
- RF Family/Standard: -
- Protocol: -
- Modulation: -
- Frequency: -
- Data Rate (Max): -
- Power - Output: -
- Sensitivity: -
- Memory Size: -
- Serial Interfaces: -
- GPIO: -
- Voltage - Supply: -
- Current - Receiving: -
- Current - Transmitting: -
- Operating Temperature: -
- Package / Case: Module
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Package: Module |
Stock4,194 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 500µA
- Current Transfer Ratio (Max): 600% @ 500µA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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Package: 16-SOIC (0.179", 4.55mm Width) |
Stock6,876 |
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Toshiba Semiconductor and Storage |
IC MUX 2 X 4:1 4 OHM 16SOIC
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 130 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm
- Voltage - Supply, Single (V+): 2 V ~ 6 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 34ns, 32ns
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 10pF
- Current - Leakage (IS(off)) (Max): 1µA
- Crosstalk: -50dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock5,056 |
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Toshiba Semiconductor and Storage |
IC MUX 8:1 4 OHM 16SOIC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 130 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm
- Voltage - Supply, Single (V+): 2 V ~ 6 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 34ns, 32ns
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 10pF
- Current - Leakage (IS(off)) (Max): 1µA
- Crosstalk: -50dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock5,664 |
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Toshiba Semiconductor and Storage |
8 H-BRIDGE DRIVER, CAN BE CONFIG
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,528 |
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Toshiba Semiconductor and Storage |
200MA LDO VOUT3.2V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,192 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock87,855 |
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Toshiba Semiconductor and Storage |
IC GATE XOR 1CH 2-INP USV
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2.3V ~ 3.6V
- Current - Quiescent (Max): 1 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.1V ~ 0.4V
- Logic Level - High: 2V ~ 2.48V
- Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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Package: - |
Stock17,625 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: - |
Stock35,895 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
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Package: - |
Stock7,500 |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INVERT 3.6V USV
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Open Drain
- Current - Output High, Low: -, 8mA
- Voltage - Supply: 0.9V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Package: - |
Stock34,125 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 90A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 157W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock28,932 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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