EPC Products

TRANS GAN 100V 2.5A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 50V
• Vgs (Max): +6V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 40V 2.7A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.18nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 20V
• Vgs (Max): +6V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 325 mOhm @ 500mA, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 80V 31A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 12mA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 40V 60A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 19mA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 80V 60A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 14mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 50V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 60V 1A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V 48A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 11mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V 25A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
• Vgs (Max): +6V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die Outline (11-Solder Bar)
• Package / Case: Die

TRANS GAN 40V 33A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 9mA
• Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 200V 8.5A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V 6A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die Outline (5-Solder Bar)
• Package / Case: Die

TRANS GAN 3N-CH 100V BUMPED DIE

• FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
• FET Feature: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
• Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 9-VFBGA
• Supplier Device Package: 9-BGA (1.35x1.35)

TRANS GAN ASYMMETRICAL HALF BRID

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
• Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

TEXT WIRELESS POWER HANDBOOK

• Accessory Type: Guide
• For Use With/Related Products: -

200 V GAN IC FET DRIVER

• Output Configuration: Low Side
• Applications: DC-DC Converters
• Interface: On/Off
• Load Type: Inductive
• Technology: MOSFET (Metal Oxide)
• Rds On (Typ): 32 mOhm
• Current - Output / Channel: 10A
• Current - Peak Output: 40A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: -
• Fault Protection: -
• Mounting Type: Surface Mount
• Package / Case: 10-XFBGA
• Supplier Device Package: 10-BGA (2.9x1.1)

IC LASER DRVR 40V 10A LVDSLOGIC

• Type: Laser Diode Driver
• Data Rate: -
• Number of Channels: 1
• Voltage - Supply: 10V ~ 30V
• Current - Supply: 47 mA
• Current - Modulation: -
• Current - Bias: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: Die
• Supplier Device Package: Die
• Mounting Type: Surface Mount

IC GAN LASER DRVR 80V

• Type: Laser Diode Driver
• Data Rate: -
• Number of Channels: 1
• Voltage - Supply: 80V
• Current - Supply: -
• Current - Modulation: -
• Current - Bias: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

Linear IC's

• Applications: Switching Regulator
• Current - Supply: 37mA
• Voltage - Supply: 10V ~ 80V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 14-PowerWFQFN
• Supplier Device Package: 14-QFN (3.5x5)

TRANS GAN 80V .006OHM AECQ101

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 80V .0033OHM 6LGA

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
• Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 150V .003OHM 3X5MM QFN

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 11mA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
• Vgs (Max): 6V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 7-QFN (3x5)
• Package / Case: 7-PowerWQFN

GANFET 2N-CH 60V 23A DIE

• FET Type: GaNFET (Gallium Nitride)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 23A
• Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 7mA
• Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

GANFET 2N-CH 60V 9.5A/38A DIE

• FET Type: GaNFET (Gallium Nitride)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
• Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
• Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

GANFET 2N-CH 120V 3.4A DIE

• FET Type: GaNFET (Gallium Nitride)
• FET Feature: -
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 3.4A
• Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: Die
• Supplier Device Package: Die

TRANSISTOR GAN 40V .0105OHM

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V .0022OHM 21BMPD

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 13mA
• Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V EPOWER STAGE

• Output Configuration: Half Bridge
• Applications: General Purpose
• Interface: Logic
• Load Type: Inductive, Capacitive, Resistive
• Technology: Gallium Nitride (GaN) FETs
• Rds On (Typ): 3.3mOhm
• Current - Output / Channel: 65A
• Current - Peak Output: -
• Voltage - Supply: 10V ~ 80V
• Voltage - Load: 10V ~ 80V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Bootstrap Circuit, Slew Rate Controlled
• Fault Protection: ESD, UVLO
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 14-PowerWFQFN
• Supplier Device Package: 14-QFN (3.5x5)