EPC Products

TRANS GAN 300V 150MO BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 200V 31A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 7mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 150V 12A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
• Vgs (Max): +6V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 200V 22A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die Outline (7-Solder Bar)
• Package / Case: Die

TRANS GAN 30V 60A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 60V 60A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 16mA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 60V 60A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 16mA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

MOSFET N-CH 100V 1.7A DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 50V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 73 mOhm @ 1A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 200V BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 7mA
• Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 100V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V 550MOHM BUMPED DI

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: -

TRANS GAN 100V BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 50V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN 100V 36A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die Outline (11-Solder Bar)
• Package / Case: Die

TRANS GAN 2N-CH 80V BUMPED DIE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
• Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

MOSFET 2NCH 100V 23A DIE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 23A
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

TRANS GAN 2N-CH 120V BUMPED DIE

• FET Type: 2 N-Channel (Dual) Common Source
• FET Feature: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 3.4A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

MOSFET 3N-CH 100V 9BGA

• FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
• FET Feature: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
• Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 9-VFBGA
• Supplier Device Package: 9-BGA (1.35x1.35)

TRANS GAN 2N-CH 100V BUMPED DIE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

150 V GAN IC DUAL FET DRIVER

• Output Configuration: Low Side
• Applications: DC-DC Converters
• Interface: On/Off
• Load Type: Inductive
• Technology: MOSFET (Metal Oxide)
• Rds On (Typ): 70 mOhm
• Current - Output / Channel: 5A
• Current - Peak Output: 18A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: -
• Fault Protection: -
• Mounting Type: Surface Mount
• Package / Case: 10-VFBGA
• Supplier Device Package: 10-BGA (2.9x1.1)

TRANS GAN 200V .010OHM 7QFN

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 7-QFN (3x5)
• Package / Case: 7-PowerWQFN

IC GATE DRVR HALF-BRIDGE 12WLCSP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: Enhanced Mode GaN FET
• Voltage - Supply: 4.5V ~ 5.5V
• Logic Voltage - VIL, VIH: 0.5V, 2.3V
• Current - Peak Output (Source, Sink): 7.1A, 12.5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 85 V
• Rise / Fall Time (Typ): 8ns, 4ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 12-UFBGA, WLCSP
• Supplier Device Package: 12-WLCSP-B (1.6x1.6)

IC LASER DRVR 40V 10A LVDS 6BMPD

• Type: -
• Data Rate: -
• Number of Channels: -
• Voltage - Supply: -
• Current - Supply: -
• Current - Modulation: -
• Current - Bias: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

Linear IC's

• Output Configuration: Half Bridge
• Applications: DC Motors, DC-DC Converters
• Interface: Logic
• Load Type: Capacitive and Resistive
• Technology: NMOS
• Rds On (Typ): 7.6mOhm LS + HS
• Current - Output / Channel: 15A
• Current - Peak Output: 78A
• Voltage - Supply: 10V ~ 80V
• Voltage - Load: 10V ~ 80V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Bootstrap Circuit, Slew Rate Controlled
• Fault Protection: ESD, Over Voltage, Short Circuit
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 13-PowerWFQFN
• Supplier Device Package: 13-WQFN-HR (3.5x5)

GANFET 2N-CH 80V 28A DIE

• FET Type: GaNFET (Gallium Nitride)
• FET Feature: -
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 28A
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 7mA
• Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

GANFET 2N-CH 80V 9.5A/38A DIE

• FET Type: GaNFET (Gallium Nitride)
• FET Feature: -
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
• Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

TRANS GAN 170V DIE .009OHM

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 170 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

TRANS GAN BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 350 V
• Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

GANFET N-CH 100V 8.2A DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

GAN FET 40V .002OHM 8BUMP DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -