Page 10 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDS4675_F085
Fairchild/ON Semiconductor

MOSFET P-CH 40V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,190
FQP7P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 7A TO-220

Package: TO-220-3

Stock215,856
FDMC86102
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8-MLP

Package: 8-PowerTDFN

Stock873,708
FDD10AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock197,340
FDMS8680
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A POWER56

Package: 8-PowerTDFN

Stock67,344
FDS6575
Fairchild/ON Semiconductor

MOSFET P-CH 20V 10A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock88,068
FDD86567_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 100A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock22,842
FDMS86520
Fairchild/ON Semiconductor

MOSFET N-CH 60V 14A 8-PQFN

Package: 8-PowerTDFN

Stock86,256
FDMS7660AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V PWRSTAGE POWER56

Package: 8-PowerTDFN

Stock41,616
FDD8870
Fairchild/ON Semiconductor

MOSFET N-CH 30V 160A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock218,916
FQU13N10LTU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock399,996
FDD86102
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock169,236
RFD16N06LESM9A
Fairchild/ON Semiconductor

MOSFET N-CH 60V 16A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock123,348
NDS8425
Fairchild/ON Semiconductor

MOSFET N-CH 20V 7.4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,202,448
FCD5N60TM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock90,480
FCD600N60Z
Fairchild/ON Semiconductor

MOSFET N CH 600V 7.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock459,192
FDD8647L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock336,588
FDD3682
Fairchild/ON Semiconductor

MOSFET N-CH 100V 32A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock329,880
FDD8453LZ
Fairchild/ON Semiconductor

MOSFET N-CH 40V 16.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock90,012
FDS6673BZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 14.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock264,456

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDS4675_F085	Fairchild/ON Semiconductor	MOSFET P-CH 40V 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,190	MOSFET (Metal Oxide)	40V	11A (Ta)	4.5V, 10V	3V @ 250µA	56nC @ 4.5V	4350pF @ 20V	±20V	-	2.4W (Ta)	13 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FQP7P06	Fairchild/ON Semiconductor	MOSFET P-CH 60V 7A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock215,856	MOSFET (Metal Oxide)	60V	7A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	295pF @ 25V	±25V	-	45W (Tc)	410 mOhm @ 3.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMC86102	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock873,708	MOSFET (Metal Oxide)	100V	7A (Ta), 20A (Tc)	6V, 10V	4V @ 250µA	18nC @ 10V	965pF @ 50V	±20V	-	2.3W (Ta), 41W (Tc)	24 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FDD10AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 50A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock197,340	MOSFET (Metal Oxide)	60V	11A (Ta), 50A (Tc)	6V, 10V	4V @ 250µA	37nC @ 10V	1840pF @ 25V	±20V	-	135W (Tc)	10.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS8680	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock67,344	MOSFET (Metal Oxide)	30V	14A (Ta), 35A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1590pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	7 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDS6575	Fairchild/ON Semiconductor	MOSFET P-CH 20V 10A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock88,068	MOSFET (Metal Oxide)	20V	10A (Ta)	2.5V, 4.5V	1.5V @ 250µA	74nC @ 4.5V	4951pF @ 10V	±8V	-	2.5W (Ta)	13 mOhm @ 10A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD86567_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tj) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock22,842	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 250µA	82nC @ 10V	4950pF @ 30V	±20V	-	227W (Tj)	3.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS86520	Fairchild/ON Semiconductor	MOSFET N-CH 60V 14A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock86,256	MOSFET (Metal Oxide)	60V	14A (Ta), 42A (Tc)	8V, 10V	4.5V @ 250µA	40nC @ 10V	2850pF @ 30V	±20V	-	2.5W (Ta), 69W (Tc)	7.4 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMS7660AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V PWRSTAGE POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock41,616	MOSFET (Metal Oxide)	30V	26A (Ta), 42A (Tc)	4.5V, 10V	3V @ 1mA	90nC @ 10V	6120pF @ 15V	±20V	-	2.5W (Ta), 83W (Tc)	2.4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDD8870	Fairchild/ON Semiconductor	MOSFET N-CH 30V 160A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock218,916	MOSFET (Metal Oxide)	30V	21A (Ta), 160A (Tc)	4.5V, 10V	2.5V @ 250µA	118nC @ 10V	5160pF @ 15V	±20V	-	160W (Tc)	3.9 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU13N10LTU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock399,996	MOSFET (Metal Oxide)	100V	10A (Tc)	5V, 10V	2V @ 250µA	12nC @ 5V	520pF @ 25V	±20V	-	2.5W (Ta), 40W (Tc)	180 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDD86102	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock169,236	MOSFET (Metal Oxide)	100V	8A (Ta), 36A (Tc)	6V, 10V	4V @ 250µA	19nC @ 10V	1035pF @ 50V	±20V	-	3.1W (Ta), 62W (Tc)	24 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
RFD16N06LESM9A	Fairchild/ON Semiconductor	MOSFET N-CH 60V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock123,348	MOSFET (Metal Oxide)	60V	16A (Tc)	5V	3V @ 250µA	62nC @ 10V	1350pF @ 25V	+10V, -8V	-	90W (Tc)	47 mOhm @ 16A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
NDS8425	Fairchild/ON Semiconductor	MOSFET N-CH 20V 7.4A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1098pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,202,448	MOSFET (Metal Oxide)	20V	7.4A (Ta)	2.7V, 4.5V	1.5V @ 250µA	18nC @ 4.5V	1098pF @ 15V	±8V	-	2.5W (Ta)	22 mOhm @ 7.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FCD5N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock90,480	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	5V @ 250µA	16nC @ 10V	600pF @ 25V	±30V	-	54W (Tc)	950 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FCD600N60Z	Fairchild/ON Semiconductor	MOSFET N CH 600V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock459,192	MOSFET (Metal Oxide)	600V	7.4A (Tc)	10V	3.5V @ 250µA	26nC @ 10V	1120pF @ 25V	±20V	-	89W (Tc)	600 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8647L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock336,588	MOSFET (Metal Oxide)	40V	14A (Ta), 42A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 10V	1640pF @ 20V	±20V	-	3.1W (Ta), 43W (Tc)	9 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3682	Fairchild/ON Semiconductor	MOSFET N-CH 100V 32A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock329,880	MOSFET (Metal Oxide)	100V	5.5A (Ta), 32A (Tc)	6V, 10V	4V @ 250µA	28nC @ 10V	1250pF @ 25V	±20V	-	95W (Tc)	36 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8453LZ	Fairchild/ON Semiconductor	MOSFET N-CH 40V 16.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3515pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock90,012	MOSFET (Metal Oxide)	40V	16.4A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	64nC @ 10V	3515pF @ 20V	±20V	-	3.1W (Ta), 65W (Tc)	6.7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS6673BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 14.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock264,456	MOSFET (Metal Oxide)	30V	14.5A (Ta)	4.5V, 10V	3V @ 250µA	124nC @ 10V	4700pF @ 15V	±25V	-	2.5W (Ta)	7.8 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC8651	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3365pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,012	MOSFET (Metal Oxide)	30V	15A (Ta), 20A (Tc)	2.5V, 4.5V	1.5V @ 250µA	27.2nC @ 4.5V	3365pF @ 15V	±12V	-	2.3W (Ta), 41W (Tc)	6.1 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FDS6298	Fairchild/ON Semiconductor	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,012,056	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	3V @ 250µA	14nC @ 5V	1108pF @ 15V	±20V	-	3W (Ta)	9 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD2N90TM	Fairchild/ON Semiconductor	MOSFET N-CH 900V 1.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,000	MOSFET (Metal Oxide)	900V	1.7A (Tc)	10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	7.2 Ohm @ 850mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDT86106LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 3.2A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 108 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock109,440	MOSFET (Metal Oxide)	100V	3.2A (Ta)	4.5V, 10V	2.2V @ 250µA	7nC @ 10V	315pF @ 50V	±20V	-	2.2W (Ta)	108 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDD390N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 26A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,696	MOSFET (Metal Oxide)	150V	26A (Tc)	10V	4V @ 250µA	18.6nC @ 10V	1285pF @ 75V	±20V	-	63W (Tc)	40 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC2523P	Fairchild/ON Semiconductor	MOSFET P-CH 150V 3A MLP 3.3SQ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock243,600	MOSFET (Metal Oxide)	150V	3A (Tc)	10V	5V @ 250µA	9nC @ 10V	270pF @ 25V	±30V	-	42W (Tc)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDD3706	Fairchild/ON Semiconductor	MOSFET N-CH 20V 14.7A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1882pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 16.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,105,896	MOSFET (Metal Oxide)	20V	14.7A (Ta), 50A (Tc)	2.5V, 10V	1.5V @ 250µA	23nC @ 4.5V	1882pF @ 10V	±12V	-	3.8W (Ta), 44W (Tc)	9 mOhm @ 16.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMA7632	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A MICROFET2X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock388,992	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	760pF @ 15V	±20V	-	2.4W (Ta)	19 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad