Page 7 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDS8884
Fairchild/ON Semiconductor

MOSFET N-CH 30V 8.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,507,584
FDC608PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 5.8A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock59,736
FDC610PZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 4.9A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock128,796
FDC604P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 5.5A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,892,056
FDN361BN
Fairchild/ON Semiconductor

MOSFET N-CH 30V 1.4A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock11,400
FDC634P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3.5A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock22,454,484
FDN336P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.3A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,437,084
FDC654P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 3.6A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,611,064
NDS356AP
Fairchild/ON Semiconductor

MOSFET P-CH 30V 1.1A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock2,021,436
FDG332PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.6A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock567,720
SI3443DV
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock776,412
FQN1N60CTA
Fairchild/ON Semiconductor

MOSFET N-CH 600V 300MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock184,116
FDY301NZ
Fairchild/ON Semiconductor

MOSFET N-CH 20V 200MA SC-89

Package: SC-89, SOT-490

Stock26,790
FDY100PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 350MA SC-89

Package: SC-89, SOT-490

Stock872,136
BSS123W
Fairchild/ON Semiconductor

MOSFET N-CH 100V 0.17A SOT-323

Package: SC-70, SOT-323

Stock174,414
2N7002T
Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-523F

Package: SC-89, SOT-490

Stock3,428,664
BS170_D26Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,432
BS170_D75Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock108,612
BS170_D27Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock111,228
2N7002W
Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-323

Package: SC-70, SOT-323

Stock1,182,744

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDS8884	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,507,584	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4.5V, 10V	2.5V @ 250µA	13nC @ 10V	635pF @ 15V	±20V	-	2.5W (Ta)	23 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDC608PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 5.8A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock59,736	MOSFET (Metal Oxide)	20V	5.8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1330pF @ 10V	±12V	-	1.6W (Ta)	30 mOhm @ 5.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDC610PZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 4.9A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1005pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock128,796	MOSFET (Metal Oxide)	30V	4.9A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	1005pF @ 15V	±25V	-	1.6W (Ta)	42 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDC604P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 5.5A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,892,056	MOSFET (Metal Oxide)	20V	5.5A (Ta)	1.8V, 4.5V	1.5V @ 250µA	30nC @ 4.5V	1926pF @ 10V	±8V	-	1.6W (Ta)	33 mOhm @ 5.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDN361BN	Fairchild/ON Semiconductor	MOSFET N-CH 30V 1.4A SSOT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock11,400	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4.5V, 10V	3V @ 250µA	1.8nC @ 4.5V	193pF @ 15V	±20V	-	500mW (Ta)	110 mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
FDC634P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3.5A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 779pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock22,454,484	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10nC @ 4.5V	779pF @ 10V	±8V	-	1.6W (Ta)	80 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDN336P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 1.3A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,437,084	MOSFET (Metal Oxide)	20V	1.3A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5nC @ 4.5V	330pF @ 10V	±8V	-	500mW (Ta)	200 mOhm @ 1.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
FDC654P	Fairchild/ON Semiconductor	MOSFET P-CH 30V 3.6A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 298pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,611,064	MOSFET (Metal Oxide)	30V	3.6A (Ta)	4.5V, 10V	3V @ 250µA	9nC @ 10V	298pF @ 15V	±20V	-	1.6W (Ta)	75 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
NDS356AP	Fairchild/ON Semiconductor	MOSFET P-CH 30V 1.1A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,021,436	MOSFET (Metal Oxide)	30V	1.1A (Ta)	4.5V, 10V	2.5V @ 250µA	4.4nC @ 5V	280pF @ 10V	±20V	-	500mW (Ta)	200 mOhm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
FDG332PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2.6A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock567,720	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.8V, 4.5V	1.5V @ 250µA	10.8nC @ 4.5V	560pF @ 10V	±8V	-	750mW (Ta)	95 mOhm @ 2.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
SI3443DV	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SSOT Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock776,412	MOSFET (Metal Oxide)	20V	4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10nC @ 4.5V	640pF @ 10V	±8V	-	1.6W (Ta)	65 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT	SOT-23-6 Thin, TSOT-23-6
FQN1N60CTA	Fairchild/ON Semiconductor	MOSFET N-CH 600V 300MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 3W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock184,116	MOSFET (Metal Oxide)	600V	300mA (Tc)	10V	4V @ 250µA	6.2nC @ 10V	170pF @ 25V	±30V	-	1W (Ta), 3W (Tc)	11.5 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FDY301NZ	Fairchild/ON Semiconductor	MOSFET N-CH 20V 200MA SC-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock26,790	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.5V, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	±12V	-	625mW (Ta)	5 Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
FDY100PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 350MA SC-89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock872,136	MOSFET (Metal Oxide)	20V	350mA (Ta)	1.8V, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	100pF @ 10V	±8V	-	625mW (Ta)	1.2 Ohm @ 350mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
BSS123W	Fairchild/ON Semiconductor	MOSFET N-CH 100V 0.17A SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 71pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock174,414	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	71pF @ 25V	±20V	-	200mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
2N7002T	Fairchild/ON Semiconductor	MOSFET N-CH 60V 115MA SOT-523F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523F Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock3,428,664	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 50mA, 5V	150°C (TJ)	Surface Mount	SOT-523F	SC-89, SOT-490
BS170_D26Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,432	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BS170_D75Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock108,612	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BS170_D27Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock111,228	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7002W	Fairchild/ON Semiconductor	MOSFET N-CH 60V 115MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,182,744	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
2N7000_D74Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock35,112	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7000_D26Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock235,572	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FDY302NZ	Fairchild/ON Semiconductor	MOSFET N-CH 20V SC-89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock215,760	MOSFET (Metal Oxide)	20V	600mA (Ta)	1.8V, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	±12V	-	625mW (Ta)	300 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
BSS138W	Fairchild/ON Semiconductor	MOSFET N-CH 50V 0.21A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 340mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock72,000	MOSFET (Metal Oxide)	50V	210mA (Ta)	4.5V, 10V	1.5V @ 1mA	1.1nC @ 10V	38pF @ 25V	±20V	-	340mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
BSS123L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 0.17A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock129,738	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2V @ 1mA	2.5nC @ 10V	21.5pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS138L	Fairchild/ON Semiconductor	MOSFET N-CH 50V 0.2A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.75V, 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,648	MOSFET (Metal Oxide)	50V	200mA (Ta)	2.75V, 5V	1.5V @ 1mA	2.4nC @ 10V	50pF @ 25V	±20V	-	350mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDL100N50F	Fairchild/ON Semiconductor	MOSFET N-CH 500V 100A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 238nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2500W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock8,412	MOSFET (Metal Oxide)	500V	100A (Tc)	10V	5V @ 250µA	238nC @ 10V	12000pF @ 25V	±30V	-	2500W (Tc)	55 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
FDH44N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 44A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5335pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock173,604	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	4V @ 250µA	108nC @ 10V	5335pF @ 25V	±30V	-	750W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3