Page 13 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDME820NZT
Fairchild/ON Semiconductor

MOSFET N-CH 20V 9A MICROFET 1.6

Package: 6-PowerUFDFN

Stock719,040
FDFMA3N109
Fairchild/ON Semiconductor

MOSFET N-CH 30V 2.9A MICRO2X2

Package: 6-VDFN Exposed Pad

Stock24,624
FDG330P
Fairchild/ON Semiconductor

MOSFET P-CH 12V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock378,408
FDMA7670
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6-MLP 2X2

Package: 6-VDFN Exposed Pad

Stock461,520
FDFS2P753Z
Fairchild/ON Semiconductor

MOSFET P-CH 30V 3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,439,976
FDMC8015L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 7A 8MLP

Package: 8-PowerWDFN

Stock75,984
FDC6392S
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.2A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,418,708
FDMA291P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6.6A MFET 2X2

Package: 6-VDFN Exposed Pad

Stock1,559,460
FDC8884
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.5A 6-SSOT

Package: SOT-23-6 Thin, TSOT-23-6

Stock52,224
FDN308P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.5A SSOT-3

Package: TO-236-3, SC-59, SOT-23-3

Stock291,372
FDMS7692
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A POWER56

Package: 8-PowerTDFN

Stock966,528
FDC640P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.5A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,864,080
2N7000_D75Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,488
FCH023N65S3_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 75A TO247

Package: TO-247-3

Stock6,256
FCH041N60E
Fairchild/ON Semiconductor

MOSFET N CH 600V 77A TO-247

Package: TO-247-3

Stock105,624
FCH47N60F_F133
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

Package: TO-247-3

Stock6,160
FDP8030L
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A TO220

Package: TO-220-3

Stock448,212
FDA50N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 48A TO-3P

Package: TO-3P-3, SC-65-3

Stock436,272
FDP020N06B_F102
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A TO-220-3

Package: TO-220-3

Stock13,644
FDPF2710T
Fairchild/ON Semiconductor

MOSFET N-CH 250V 25A TO-220F

Package: TO-220-3 Full Pack

Stock60,396

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDME820NZT	Fairchild/ON Semiconductor	MOSFET N-CH 20V 9A MICROFET 1.6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFet 1.6x1.6 Thin Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock719,040	MOSFET (Metal Oxide)	20V	9A (Ta)	1.8V, 4.5V	1V @ 250µA	8.5nC @ 4.5V	865pF @ 10V	±12V	-	2.1W (Ta)	18 mOhm @ 9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MicroFet 1.6x1.6 Thin	6-PowerUFDFN
FDFMA3N109	Fairchild/ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock24,624	MOSFET (Metal Oxide)	30V	2.9A (Tc)	2.5V, 4.5V	1.5V @ 250µA	3nC @ 4.5V	220pF @ 15V	±12V	Schottky Diode (Isolated)	1.5W (Ta)	123 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDG330P	Fairchild/ON Semiconductor	MOSFET P-CH 12V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 477pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock378,408	MOSFET (Metal Oxide)	12V	2A (Ta)	1.8V, 4.5V	1.5V @ 250µA	7nC @ 4.5V	477pF @ 6V	±8V	-	750mW (Ta)	110 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
FDMA7670	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6-MLP 2X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock461,520	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 10V	1360pF @ 15V	±20V	-	2.4W (Ta)	15 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDFS2P753Z	Fairchild/ON Semiconductor	MOSFET P-CH 30V 3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Vgs (Max): ±25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 115 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,439,976	MOSFET (Metal Oxide)	30V	3A (Ta)	4.5V, 10V	3V @ 250µA	9.3nC @ 10V	455pF @ 10V	±25V	Schottky Diode (Isolated)	1.6W (Ta)	115 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC8015L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 7A 8MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock75,984	MOSFET (Metal Oxide)	40V	7A (Ta), 18A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 10V	945pF @ 20V	±20V	-	2.3W (Ta), 24W (Tc)	26 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDC6392S	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2.2A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,418,708	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5.2nC @ 4.5V	369pF @ 10V	±12V	Schottky Diode (Isolated)	960mW (Ta)	150 mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDMA291P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6.6A MFET 2X2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock1,559,460	MOSFET (Metal Oxide)	20V	6.6A (Ta)	1.8V, 4.5V	1V @ 250µA	14nC @ 4.5V	1000pF @ 10V	±8V	-	2.4W (Ta)	42 mOhm @ 6.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDC8884	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.5A 6-SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SSOT Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock52,224	MOSFET (Metal Oxide)	30V	6.5A (Ta), 8A (Tc)	4.5V, 10V	3V @ 250µA	7.4nC @ 10V	465pF @ 15V	±20V	-	1.6W (Ta)	23 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT	SOT-23-6 Thin, TSOT-23-6
FDN308P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 1.5A SSOT-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 341pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock291,372	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5.4nC @ 4.5V	341pF @ 10V	±12V	-	500mW (Ta)	125 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
FDMS7692	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock966,528	MOSFET (Metal Oxide)	30V	14A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	22nC @ 10V	1350pF @ 15V	±20V	-	2.5W (Ta), 27W (Tc)	7.5 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDC640P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4.5A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,864,080	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	13nC @ 4.5V	890pF @ 10V	±12V	-	1.6W (Ta)	53 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
2N7000_D75Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,488	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FCH023N65S3_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 75A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7160pF @ 400V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock6,256	MOSFET (Metal Oxide)	650V	75A (Tc)	10V	4.5V @ 7.5mA	222nC @ 10V	7160pF @ 400V	±30V	Super Junction	595W (Tc)	23 mOhm @ 37.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FCH041N60E	Fairchild/ON Semiconductor	MOSFET N CH 600V 77A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 592W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock105,624	MOSFET (Metal Oxide)	600V	77A (Tc)	10V	3.5V @ 250µA	380nC @ 10V	13700pF @ 100V	±20V	-	592W (Tc)	41 mOhm @ 39A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH47N60F_F133	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,160	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	270nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	70 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FDP8030L	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock448,212	MOSFET (Metal Oxide)	30V	80A (Ta)	4.5V, 10V	2V @ 250µA	170nC @ 5V	10500pF @ 15V	±20V	-	187W (Tc)	3.5 mOhm @ 80A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDA50N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 48A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock436,272	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	5V @ 250µA	137nC @ 10V	6460pF @ 25V	±20V	-	625W (Tc)	105 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDP020N06B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 60V 120A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20930pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock13,644	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4.5V @ 250µA	268nC @ 10V	20930pF @ 30V	±20V	-	333W (Tc)	2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDPF2710T	Fairchild/ON Semiconductor	MOSFET N-CH 250V 25A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock60,396	MOSFET (Metal Oxide)	250V	25A (Tc)	10V	5V @ 250µA	101nC @ 10V	7280pF @ 25V	±30V	-	62.5W (Tc)	42.5 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDPF20N50FT	Fairchild/ON Semiconductor	MOSFET N-CH 500V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock10,332	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	65nC @ 10V	3390pF @ 25V	±30V	-	38.5W (Tc)	260 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDP083N15A_F102	Fairchild/ON Semiconductor	MOSFET N-CH 150V 83A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,048	MOSFET (Metal Oxide)	150V	83A (Tc)	10V	4V @ 250µA	84nC @ 10V	6040pF @ 25V	±20V	-	294W (Tc)	8.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDB2710	Fairchild/ON Semiconductor	MOSFET N-CH 250V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,132	MOSFET (Metal Oxide)	250V	50A (Tc)	10V	5V @ 250µA	101nC @ 10V	7280pF @ 25V	±30V	-	260W (Tc)	42.5 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCB20N60FTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,794	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDP038AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock108,552	MOSFET (Metal Oxide)	60V	17A (Ta), 80A (Tc)	6V, 10V	4V @ 250µA	124nC @ 10V	6400pF @ 25V	±20V	-	310W (Tc)	3.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDP2532	Fairchild/ON Semiconductor	MOSFET N-CH 150V 79A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock168,372	MOSFET (Metal Oxide)	150V	8A (Ta), 79A (Tc)	6V, 10V	4V @ 250µA	107nC @ 10V	5870pF @ 25V	±20V	-	310W (Tc)	16 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDA59N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 59A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 29.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock595,932	MOSFET (Metal Oxide)	300V	59A (Tc)	10V	5V @ 250µA	100nC @ 10V	4670pF @ 25V	±30V	-	500W (Tc)	56 mOhm @ 29.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQH8N100C	Fairchild/ON Semiconductor	MOSFET N-CH 1000V 8A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock111,564	MOSFET (Metal Oxide)	1000V	8A (Tc)	10V	5V @ 250µA	70nC @ 10V	3220pF @ 25V	±30V	-	225W (Tc)	1.45 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3