Page 14 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDD6N50FTM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock22,008
FDFS6N548
Fairchild/ON Semiconductor

MOSFET N-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock24,690
FDS3590
Fairchild/ON Semiconductor

MOSFET N-CH 80V 6.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock538,404
FDD5N50NZTM
Fairchild/ON Semiconductor

MOSFET N-CH 500V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock82,368
FDMS7670AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V SYNCFET POWER56

Package: 8-PowerTDFN

Stock10,488
FDD8874
Fairchild/ON Semiconductor

MOSFET N-CH 30V 116A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock223,512
FDD390N15ALZ
Fairchild/ON Semiconductor

MOSFET N-CH 150V 26A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,894
FDS5690
Fairchild/ON Semiconductor

MOSFET N-CH 60V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock379,728
FDD8445_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock660,012
RFD16N05SM9A
Fairchild/ON Semiconductor

MOSFET N-CH 50V 16A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock444,636
FQD7N30TM
Fairchild/ON Semiconductor

MOSFET N-CH 300V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock502,140
FDD120AN15A0
Fairchild/ON Semiconductor

MOSFET N-CH 150V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock186,732
FDT86256
Fairchild/ON Semiconductor

MOSFET N-CH 150V 1.2A SOT-223-4

Package: TO-261-4, TO-261AA

Stock180,120
FDD24AN06LA0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 40A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,388
FDS6690AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock730,896
FDS4435BZ_F085
Fairchild/ON Semiconductor

MOSFET P-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock23,358
RFD12N06RLESM9A
Fairchild/ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock27,324
FDD8451
Fairchild/ON Semiconductor

MOSFET N-CH 40V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,818,848
FDD5612
Fairchild/ON Semiconductor

MOSFET N-CH 60V 5.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,183,776
FQNL2N50BTA
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.35A TO-92-3

Package: TO-226-3, TO-92-3 Long Body (Formed Leads)

Stock34,080

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDD6N50FTM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 5.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock22,008	MOSFET (Metal Oxide)	500V	5.5A (Tc)	10V	5V @ 250µA	19.8nC @ 10V	960pF @ 25V	±30V	-	89W (Tc)	1.15 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDFS6N548	Fairchild/ON Semiconductor	MOSFET N-CH 30V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock24,690	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2.5V @ 250µA	13nC @ 10V	700pF @ 15V	±20V	Schottky Diode (Isolated)	1.6W (Ta)	23 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS3590	Fairchild/ON Semiconductor	MOSFET N-CH 80V 6.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock538,404	MOSFET (Metal Oxide)	80V	6.5A (Ta)	6V, 10V	4V @ 250µA	35nC @ 10V	1180pF @ 40V	±20V	-	2.5W (Ta)	39 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD5N50NZTM	Fairchild/ON Semiconductor	MOSFET N-CH 500V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock82,368	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	5V @ 250µA	12nC @ 10V	440pF @ 25V	±25V	-	62W (Tc)	1.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS7670AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V SYNCFET POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4225pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock10,488	MOSFET (Metal Oxide)	30V	22A (Ta), 42A (Tc)	4.5V, 10V	3V @ 1mA	66nC @ 10V	4225pF @ 15V	±20V	-	2.5W (Ta), 65W (Tc)	3 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDD8874	Fairchild/ON Semiconductor	MOSFET N-CH 30V 116A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock223,512	MOSFET (Metal Oxide)	30V	18A (Ta), 116A (Tc)	4.5V, 10V	2.5V @ 250µA	72nC @ 10V	2990pF @ 15V	±20V	-	110W (Tc)	5.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD390N15ALZ	Fairchild/ON Semiconductor	MOSFET N-CH 150V 26A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,894	MOSFET (Metal Oxide)	150V	26A (Tc)	4.5V, 10V	2.8V @ 250µA	39nC @ 10V	1760pF @ 75V	±20V	-	63W (Tc)	42 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS5690	Fairchild/ON Semiconductor	MOSFET N-CH 60V 7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1107pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock379,728	MOSFET (Metal Oxide)	60V	7A (Ta)	6V, 10V	4V @ 250µA	32nC @ 10V	1107pF @ 30V	±20V	-	2.5W (Ta)	28 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD8445_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock660,012	MOSFET (Metal Oxide)	40V	70A (Tc)	10V	4V @ 250µA	59nC @ 10V	4050pF @ 25V	±20V	-	79W (Tc)	8.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
RFD16N05SM9A	Fairchild/ON Semiconductor	MOSFET N-CH 50V 16A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock444,636	MOSFET (Metal Oxide)	50V	16A (Tc)	10V	4V @ 250µA	80nC @ 20V	900pF @ 25V	±20V	-	72W (Tc)	47 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7N30TM	Fairchild/ON Semiconductor	MOSFET N-CH 300V 5.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock502,140	MOSFET (Metal Oxide)	300V	5.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	610pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	700 mOhm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD120AN15A0	Fairchild/ON Semiconductor	MOSFET N-CH 150V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock186,732	MOSFET (Metal Oxide)	150V	2.8A (Ta), 14A (Tc)	6V, 10V	4V @ 250µA	14.5nC @ 10V	770pF @ 25V	±20V	-	65W (Tc)	120 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDT86256	Fairchild/ON Semiconductor	MOSFET N-CH 150V 1.2A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Rds On (Max) @ Id, Vgs: 845 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock180,120	MOSFET (Metal Oxide)	150V	1.2A (Ta), 3A (Tc)	6V, 10V	4V @ 250µA	2nC @ 10V	73pF @ 75V	±20V	-	2.3W (Ta), 10W (Tc)	845 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDD24AN06LA0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 40A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	60V	7.1A (Ta), 40A (Tc)	5V, 10V	2V @ 250µA	21nC @ 5V	1850pF @ 25V	±20V	-	75W (Tc)	19 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS6690AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 10A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock730,896	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	3V @ 1mA	23nC @ 10V	910pF @ 15V	±20V	-	2.5W (Ta)	12 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS4435BZ_F085	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1845pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock23,358	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1845pF @ 15V	±25V	-	2.5W (Ta)	20 mOhm @ 8.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RFD12N06RLESM9A	Fairchild/ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock27,324	MOSFET (Metal Oxide)	60V	18A (Tc)	4.5V, 10V	3V @ 250µA	15nC @ 10V	485pF @ 25V	±16V	-	49W (Tc)	63 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8451	Fairchild/ON Semiconductor	MOSFET N-CH 40V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,818,848	MOSFET (Metal Oxide)	40V	9A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	990pF @ 20V	±20V	-	30W (Tc)	24 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5612	Fairchild/ON Semiconductor	MOSFET N-CH 60V 5.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,183,776	MOSFET (Metal Oxide)	60V	5.4A (Ta)	6V, 10V	3V @ 250µA	11nC @ 10V	660pF @ 30V	±20V	-	3.8W (Ta), 42W (Tc)	55 mOhm @ 5.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
FQNL2N50BTA	Fairchild/ON Semiconductor	MOSFET N-CH 500V 0.35A TO-92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)	Package: TO-226-3, TO-92-3 Long Body (Formed Leads)	Stock34,080	MOSFET (Metal Oxide)	500V	350mA (Tc)	10V	3.7V @ 250µA	8nC @ 10V	230pF @ 25V	±30V	-	1.5W (Tc)	5.3 Ohm @ 175mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 Long Body (Formed Leads)
FDD6612A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock364,908	MOSFET (Metal Oxide)	30V	9.5A (Ta), 30A (Tc)	4.5V, 10V	3V @ 250µA	9.4nC @ 5V	660pF @ 15V	±20V	-	2.8W (Ta), 36W (Tc)	20 mOhm @ 9.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD8P10TM	Fairchild/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock210,180	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	530 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8876	Fairchild/ON Semiconductor	MOSFET N-CH 30V 73A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock151,308	MOSFET (Metal Oxide)	30V	15A (Ta), 73A (Tc)	4.5V, 10V	2.5V @ 250µA	47nC @ 10V	1700pF @ 15V	±20V	-	70W (Tc)	8.2 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD9N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock25,500	MOSFET (Metal Oxide)	250V	7.4A (Tc)	10V	5V @ 250µA	20nC @ 10V	700pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	420 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,684	MOSFET (Metal Oxide)	200V	3.8A (Tc)	5V, 10V	2V @ 250µA	6.2nC @ 5V	325pF @ 25V	±20V	-	2.5W (Ta), 37W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD20N06TM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 16.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock242,232	MOSFET (Metal Oxide)	60V	16.8A (Tc)	10V	4V @ 250µA	15nC @ 10V	590pF @ 25V	±25V	-	2.5W (Ta), 38W (Tc)	63 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,936	MOSFET (Metal Oxide)	30V	11A (Ta), 40A (Tc)	4.5V, 10V	2.5V @ 250µA	26nC @ 10V	880pF @ 15V	±20V	-	40W (Tc)	15 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76407D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,060	MOSFET (Metal Oxide)	60V	12A (Tc)	4.5V, 10V	3V @ 250µA	11.3nC @ 10V	350pF @ 25V	±16V	-	38W (Tc)	92 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63