Page 15 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDP5N50NZ
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4.5A TO220

Package: TO-220-3

Stock187,464
FDMS7556S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A POWER56

Package: 8-PowerTDFN

Stock55,980
FQP3N80C
Fairchild/ON Semiconductor

MOSFET N-CH 800V 3A TO-220

Package: TO-220-3

Stock406,128
FDP55N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 55A TO-220

Package: TO-220-3

Stock103,824
FDB8445
Fairchild/ON Semiconductor

MOSFET N-CH 40V 70A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,396
FDMS86101A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 13A POWER56

Package: 8-PowerTDFN

Stock4,608
FQPF20N06L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 15.7A TO-220F

Package: TO-220-3 Full Pack

Stock48,216
FDPF770N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V 10A TO-220F

Package: TO-220-3 Full Pack

Stock36,588
FQP3N60C
Fairchild/ON Semiconductor

MOSFET N-CH 600V 3A TO-220

Package: TO-220-3

Stock164,016
FDMS030N06B
Fairchild/ON Semiconductor

MOSFET N-CH 60V 22.1A POWER56

Package: 8-PowerTDFN

Stock27,780
FDS86240
Fairchild/ON Semiconductor

MOSFET N-CH 150V 7.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,196
FDMS3672
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.4A POWER56-8

Package: 8-PowerWDFN

Stock308,688
FDMS2572
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.5A POWER56

Package: 8-PowerWDFN

Stock154,440
FQU5N40TU
Fairchild/ON Semiconductor

MOSFET N-CH 400V 3.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock49,464
FQP10N20C
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9.5A TO-220

Package: TO-220-3

Stock6,592
FDS6570A
Fairchild/ON Semiconductor

MOSFET N-CH 20V 15A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock421,680
FDMC8321L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 22A 8-PQFN

Package: 8-PowerTDFN

Stock12,408
FDS4470
Fairchild/ON Semiconductor

MOSFET N-CH 40V 12.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,061,616
FDS3580
Fairchild/ON Semiconductor

MOSFET N-CH 80V 7.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock210,000
FDD86326
Fairchild/ON Semiconductor

MOSFET N-CH 80V TRENCH DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock87,102

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDP5N50NZ	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock187,464	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	5V @ 250µA	12nC @ 10V	440pF @ 25V	±25V	-	78W (Tc)	1.5 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMS7556S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8965pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock55,980	MOSFET (Metal Oxide)	25V	35A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	133nC @ 10V	8965pF @ 13V	±20V	-	2.5W (Ta), 96W (Tc)	1.2 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FQP3N80C	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock406,128	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 250µA	16.5nC @ 10V	705pF @ 25V	±30V	-	107W (Tc)	4.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDP55N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 55A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,824	MOSFET (Metal Oxide)	60V	55A (Tc)	10V	4V @ 250µA	37nC @ 10V	1510pF @ 25V	±25V	-	114W (Tc)	22 mOhm @ 27.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDB8445	Fairchild/ON Semiconductor	MOSFET N-CH 40V 70A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3805pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,396	MOSFET (Metal Oxide)	40V	70A (Tc)	10V	4V @ 250µA	62nC @ 10V	3805pF @ 25V	±20V	-	92W (Tc)	9 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS86101A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 13A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,608	MOSFET (Metal Oxide)	100V	13A (Ta), 60A (Tc)	6V, 10V	4V @ 250µA	58nC @ 10V	4120pF @ 50V	±20V	-	2.5W (Ta), 104W (Tc)	8 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FQPF20N06L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 15.7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.85A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock48,216	MOSFET (Metal Oxide)	60V	15.7A (Tc)	5V, 10V	2.5V @ 250µA	13nC @ 5V	630pF @ 25V	±20V	-	30W (Tc)	55 mOhm @ 7.85A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDPF770N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 10A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock36,588	MOSFET (Metal Oxide)	150V	10A (Tc)	10V	4V @ 250µA	11.2nC @ 10V	765pF @ 75V	±20V	-	21W (Tc)	77 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
FQP3N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock164,016	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	4V @ 250µA	14nC @ 10V	565pF @ 25V	±30V	-	75W (Tc)	3.4 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMS030N06B	Fairchild/ON Semiconductor	MOSFET N-CH 60V 22.1A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7560pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock27,780	MOSFET (Metal Oxide)	60V	22.1A (Ta), 100A (Tc)	10V	4.5V @ 250µA	75nC @ 10V	7560pF @ 30V	±20V	-	2.5W (Ta), 104W (Tc)	3 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDS86240	Fairchild/ON Semiconductor	MOSFET N-CH 150V 7.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 19.8 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,196	MOSFET (Metal Oxide)	150V	7.5A (Ta)	6V, 10V	4V @ 250µA	40nC @ 10V	2570pF @ 75V	±20V	-	2.5W (Ta), 5W (Tc)	19.8 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMS3672	Fairchild/ON Semiconductor	MOSFET N-CH 100V 7.4A POWER56-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2680pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock308,688	MOSFET (Metal Oxide)	100V	7.4A (Ta), 22A (Tc)	6V, 10V	4V @ 250µA	44nC @ 10V	2680pF @ 50V	±20V	-	2.5W (Ta), 78W (Tc)	23 mOhm @ 7.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerWDFN
FDMS2572	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.5A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock154,440	MOSFET (Metal Oxide)	150V	4.5A (Ta), 27A (Tc)	6V, 10V	4V @ 250µA	43nC @ 10V	2610pF @ 75V	±20V	-	2.5W (Ta), 78W (Tc)	47 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerWDFN
FQU5N40TU	Fairchild/ON Semiconductor	MOSFET N-CH 400V 3.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock49,464	MOSFET (Metal Oxide)	400V	3.4A (Tc)	10V	5V @ 250µA	13nC @ 10V	460pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	1.6 Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQP10N20C	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,592	MOSFET (Metal Oxide)	200V	9.5A (Tc)	10V	4V @ 250µA	26nC @ 10V	510pF @ 25V	±30V	-	72W (Tc)	360 mOhm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDS6570A	Fairchild/ON Semiconductor	MOSFET N-CH 20V 15A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock421,680	MOSFET (Metal Oxide)	20V	15A (Ta)	2.5V, 4.5V	1.5V @ 250µA	66nC @ 5V	4700pF @ 10V	±8V	-	2.5W (Ta)	7.5 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC8321L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 22A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock12,408	MOSFET (Metal Oxide)	40V	22A (Ta), 49A (Tc)	4.5V, 10V	3V @ 250µA	61nC @ 10V	3900pF @ 20V	±20V	-	2.3W (Ta), 40W (Tc)	2.5 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
FDS4470	Fairchild/ON Semiconductor	MOSFET N-CH 40V 12.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2659pF @ 20V Vgs (Max): +30V, -20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,061,616	MOSFET (Metal Oxide)	40V	12.5A (Ta)	10V	5V @ 250µA	63nC @ 10V	2659pF @ 20V	+30V, -20V	-	2.5W (Ta)	9 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS3580	Fairchild/ON Semiconductor	MOSFET N-CH 80V 7.6A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock210,000	MOSFET (Metal Oxide)	80V	7.6A (Ta)	6V, 10V	4V @ 250µA	46nC @ 10V	1800pF @ 25V	±20V	-	2.5W (Ta)	29 mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD86326	Fairchild/ON Semiconductor	MOSFET N-CH 80V TRENCH DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock87,102	MOSFET (Metal Oxide)	80V	8A (Ta), 37A (Tc)	6V, 10V	4V @ 250µA	19nC @ 10V	1035pF @ 50V	±20V	-	3.1W (Ta), 62W (Tc)	23 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS8870	Fairchild/ON Semiconductor	MOSFET N-CH 30V 18A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4615pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock261,036	MOSFET (Metal Oxide)	30V	18A (Ta)	4.5V, 10V	2.5V @ 250µA	112nC @ 10V	4615pF @ 15V	±20V	-	2.5W (Ta)	4.2 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD8444_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 145A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 153W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,000	MOSFET (Metal Oxide)	40V	145A (Tc)	10V	4V @ 250µA	116nC @ 10V	6195pF @ 25V	±20V	-	153W (Tc)	5.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5353	Fairchild/ON Semiconductor	MOSFET N-CH 60V 11.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 10.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock169,440	MOSFET (Metal Oxide)	60V	11.5A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	65nC @ 10V	3215pF @ 30V	±20V	-	3.1W (Ta), 69W (Tc)	12.3 mOhm @ 10.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU1N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock321,000	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	4V @ 250µA	6.2nC @ 10V	170pF @ 25V	±30V	-	2.5W (Ta), 28W (Tc)	11.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FCD7N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock9,876	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	83W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS8840NZ	Fairchild/ON Semiconductor	MOSFET N-CH 40V 18.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7535pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,580	MOSFET (Metal Oxide)	40V	18.6A (Ta)	4.5V, 10V	3V @ 250µA	144nC @ 10V	7535pF @ 20V	±20V	-	2.5W (Ta)	4.5 mOhm @ 18.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD5N60CTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock164,676	MOSFET (Metal Oxide)	600V	2.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	670pF @ 25V	±30V	-	2.5W (Ta), 49W (Tc)	2.5 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FCD4N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 3.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock9,696	MOSFET (Metal Oxide)	600V	3.9A (Tc)	10V	5V @ 250µA	16.6nC @ 10V	540pF @ 25V	±30V	-	50W (Tc)	1.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63