Page 18 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

2N7002KW
Fairchild/ON Semiconductor

MOSFET N-CH 60V 0.31A SOT323

Package: SC-70, SOT-323

Stock1,149,648
FDMC8884
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9A POWER33

Package: 8-PowerWDFN

Stock4,551,480
FCH040N65S3_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 65A TO247-3

Package: TO-247-3

Stock9,324
FCH043N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 75A TO247

Package: TO-247-3

Stock392,724
FCP16N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 16A TO-220

Package: TO-220-3

Stock20,244
FDBL86210_F085
Fairchild/ON Semiconductor

MOSFET N-CH 150V 169A PSOF8

Package: 8-PowerSFN

Stock15,726
FCP650N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 10A

Package: TO-220-3

Stock21,192
FDP027N08B_F102
Fairchild/ON Semiconductor

MOSFET N-CH 80V 120A TO-220-3

Package: TO-220-3

Stock17,064
FDP045N10A_F102
Fairchild/ON Semiconductor

MOSFET N-CH 100V 120A TO-220-3

Package: TO-220-3

Stock16,932
FCPF16N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 16A TO-220F

Package: TO-220-3 Full Pack

Stock6,080
FCP11N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A TO-220

Package: TO-220-3

Stock19,752
FCU850N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock21,150
FCPF11N60F
Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A TO-220F

Package: TO-220-3 Full Pack

Stock5,504
FDB060AN08A0
Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock31,848
FQPF8N60CFT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 6.26A TO-220F

Package: TO-220-3 Full Pack

Stock23,220
FDPF10N60NZ
Fairchild/ON Semiconductor

MOSFET N-CH 600V 10A TO-220F

Package: TO-220-3 Full Pack

Stock423,060
FDPF390N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V 15A TO-220F

Package: TO-220-3 Full Pack

Stock390,000
FQPF16N25C
Fairchild/ON Semiconductor

MOSFET N-CH 250V 15.6A TO-220F

Package: TO-220-3 Full Pack

Stock607,140
FQP7N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 6.6A TO-220

Package: TO-220-3

Stock103,464
FQPF7P20
Fairchild/ON Semiconductor

MOSFET P-CH 200V 5.2A TO-220F

Package: TO-220-3 Full Pack

Stock97,080

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2N7002KW	Fairchild/ON Semiconductor	MOSFET N-CH 60V 0.31A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,149,648	MOSFET (Metal Oxide)	60V	310mA (Ta)	5V, 10V	2.1V @ 250µA	-	50pF @ 25V	±20V	-	350mW (Ta)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
FDMC8884	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,551,480	MOSFET (Metal Oxide)	30V	9A (Ta), 15A (Tc)	4.5V, 10V	2.5V @ 250µA	14nC @ 10V	685pF @ 15V	±20V	-	2.3W (Ta), 18W (Tc)	19 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FCH040N65S3_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 65A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 6.5mA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4740pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,324	MOSFET (Metal Oxide)	650V	65A (Tc)	10V	4.5V @ 6.5mA	136nC @ 10V	4740pF @ 400V	±30V	-	417W (Tc)	40 mOhm @ 32.5A, 10V	-55°C ~ 150°C	Through Hole	TO-247-3	TO-247-3
FCH043N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 75A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12225pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 592W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock392,724	MOSFET (Metal Oxide)	600V	75A (Tc)	10V	3.5V @ 250µA	215nC @ 10V	12225pF @ 400V	±20V	-	592W (Tc)	43 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCP16N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 16A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock20,244	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	5V @ 250µA	70nC @ 10V	2250pF @ 25V	±30V	-	167W (Tc)	260 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDBL86210_F085	Fairchild/ON Semiconductor	MOSFET N-CH 150V 169A PSOF8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5805pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tj) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock15,726	MOSFET (Metal Oxide)	150V	169A (Tc)	10V	4V @ 250µA	90nC @ 10V	5805pF @ 75V	±20V	-	500W (Tj)	6.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FCP650N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 10A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1565pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock21,192	MOSFET (Metal Oxide)	800V	10A (Tc)	10V	4.5V @ 800µA	35nC @ 10V	1565pF @ 100V	±20V	-	162W (Tc)	650 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FDP027N08B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 80V 120A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 246W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock17,064	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4.5V @ 250µA	178nC @ 10V	13530pF @ 40V	±20V	-	246W (Tc)	2.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDP045N10A_F102	Fairchild/ON Semiconductor	MOSFET N-CH 100V 120A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock16,932	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 250µA	74nC @ 10V	5270pF @ 50V	±20V	-	263W (Tc)	4.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCPF16N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 16A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37.9W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,080	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	5V @ 250µA	70nC @ 10V	2250pF @ 25V	±30V	-	37.9W (Tc)	260 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
FCP11N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock19,752	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	52nC @ 10V	1490pF @ 25V	±30V	-	125W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCU850N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock21,150	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	4.5V @ 600µA	29nC @ 10V	1315pF @ 100V	±20V	-	75W (Tc)	850 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FCPF11N60F	Fairchild/ON Semiconductor	MOSFET N-CH 600V 11A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,504	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	52nC @ 10V	1490pF @ 25V	±30V	-	36W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDB060AN08A0	Fairchild/ON Semiconductor	MOSFET N-CH 75V 80A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock31,848	MOSFET (Metal Oxide)	75V	16A (Ta), 80A (Tc)	6V, 10V	4V @ 250µA	95nC @ 10V	5150pF @ 25V	±20V	-	255W (Tc)	6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF8N60CFT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 6.26A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock23,220	MOSFET (Metal Oxide)	600V	6.26A (Tc)	10V	4V @ 250µA	36nC @ 10V	1255pF @ 25V	±30V	-	48W (Tc)	1.5 Ohm @ 3.13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDPF10N60NZ	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1475pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock423,060	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	1475pF @ 25V	±25V	-	38W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDPF390N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 15A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock390,000	MOSFET (Metal Oxide)	150V	15A (Tc)	10V	4V @ 250µA	18.6nC @ 10V	1285pF @ 75V	±20V	-	22W (Tc)	40 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
FQPF16N25C	Fairchild/ON Semiconductor	MOSFET N-CH 250V 15.6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock607,140	MOSFET (Metal Oxide)	250V	15.6A (Tc)	10V	4V @ 250µA	53.5nC @ 10V	1080pF @ 25V	±30V	-	43W (Tc)	270 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP7N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 6.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	200V	6.6A (Tc)	10V	5V @ 250µA	10nC @ 10V	400pF @ 25V	±30V	-	63W (Tc)	690 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQPF7P20	Fairchild/ON Semiconductor	MOSFET P-CH 200V 5.2A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock97,080	MOSFET (Metal Oxide)	200V	5.2A (Tc)	10V	5V @ 250µA	25nC @ 10V	770pF @ 25V	±30V	-	45W (Tc)	690 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDMS86102LZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V 7A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock37,188	MOSFET (Metal Oxide)	100V	7A (Ta), 22A (Tc)	4.5V, 10V	2.5V @ 250µA	22nC @ 10V	1305pF @ 50V	±20V	-	2.5W (Ta), 69W (Tc)	25 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMS3500	Fairchild/ON Semiconductor	MOSFET N-CH 75V 9.2A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4765pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock36,000	MOSFET (Metal Oxide)	75V	9.2A (Ta), 49A (Tc)	4.5V, 10V	3V @ 250µA	91nC @ 10V	4765pF @ 40V	±20V	-	2.5W (Ta), 96W (Tc)	14.5 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMC8622	Fairchild/ON Semiconductor	MOSFET N-CH 100V 4A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 402pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock12,120	MOSFET (Metal Oxide)	100V	4A (Ta), 16A (Tc)	6V, 10V	4V @ 250µA	7.3nC @ 10V	402pF @ 50V	±20V	-	2.5W (Ta), 31W (Tc)	56 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDMS86369_F085	Fairchild/ON Semiconductor	MOSFET N-CH 80V 65A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock29,994	MOSFET (Metal Oxide)	80V	65A (Tc)	10V	4V @ 250µA	46nC @ 10V	2470pF @ 40V	±20V	-	107W (Tc)	7.5 mOhm @ 65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMA86251	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2.4A 6-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 175 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock22,902	MOSFET (Metal Oxide)	150V	2.4A (Ta)	6V, 10V	4V @ 250µA	5.8nC @ 10V	363pF @ 75V	±20V	-	2.4W (Ta)	175 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-WDFN Exposed Pad
FQD12P10TM_F085	Fairchild/ON Semiconductor	MOSFET P-CH 100V 9.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 4.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock23,214	MOSFET (Metal Oxide)	100V	9.4A (Tc)	10V	4V @ 250µA	27nC @ 10V	800pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	290 mOhm @ 4.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI3457DV	Fairchild/ON Semiconductor	MOSFET P-CH 30V 4A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,719,504	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	3V @ 250µA	8.1nC @ 5V	470pF @ 25V	±25V	-	1.6W (Ta)	50 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDMS0309AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 21A PT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock389,064	MOSFET (Metal Oxide)	30V	21A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	47nC @ 10V	3000pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	3.5 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN