Page 20 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDMC7692S_F126
Fairchild/ON Semiconductor

MOSFET N-CH 30V

Package: 8-PowerWDFN

Stock6,144
FDMC7692S_F127
Fairchild/ON Semiconductor

MOSFET N-CH 30V

Package: 8-PowerWDFN

Stock6,976
FDFM2P110
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3.5A 3X3 MLP

Package: 6-MLP, Power33

Stock182,484
FDZ661PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.6A 4-WLCSP

Package: 4-XFBGA, WLCSP

Stock4,096
FDT86244
Fairchild/ON Semiconductor

MOSFET N-CH 150V 2.8A SOT-223

Package: TO-261-4, TO-261AA

Stock67,500
FDMS7558S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 32A POWER56

Package: 8-PowerTDFN

Stock228,840
FDMA510PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 7.8A 6-MICROFET

Package: 6-VDFN Exposed Pad

Stock276,036
FQU8P10TU
Fairchild/ON Semiconductor

MOSFET P-CH 100V 6.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock26,994
FQT13N06TF
Fairchild/ON Semiconductor

MOSFET N-CH 60V 2.8A SOT-223

Package: TO-261-4, TO-261AA

Stock2,384
FDFME2P823ZT
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.6A 6MICROFET

Package: 6-UFDFN Exposed Pad

Stock2,016
FDMA8884
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.5A 6-MLP 2X2

Package: 6-VDFN Exposed Pad

Stock2,160
FQD13N10TM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock588,996
FDME510PZT
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6-MICROFET

Package: 6-PowerUDFN

Stock15,360
FDFME3N311ZT
Fairchild/ON Semiconductor

MOSFET N-CH 30V 1.8A 6MICROFET

Package: 6-UFDFN Exposed Pad

Stock307,464
FQT4N25TF
Fairchild/ON Semiconductor

MOSFET N-CH 250V 0.83A SOT-223

Package: TO-261-4, TO-261AA

Stock1,044,876
SSN1N45BTA
Fairchild/ON Semiconductor

MOSFET N-CH 450V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock305,988
FDG315N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock601,764
FDT86246L
Fairchild/ON Semiconductor

MOSFET N-CH 150V 2A SOT-223

Package: TO-261-4, TO-261AA

Stock7,456
FDT1600N10ALZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V SOT-223-4

Package: TO-261-4, TO-261AA

Stock4,992
FDZ191P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A 6WLCSP

Package: 6-UFBGA, WLCSP

Stock208,320

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDMC7692S_F126	Fairchild/ON Semiconductor	MOSFET N-CH 30V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,144	MOSFET (Metal Oxide)	30V	12.5A (Ta), 18A (Tc)	4.5V, 10V	3V @ 1mA	23nC @ 10V	1385pF @ 15V	±20V	-	2.3W (Ta), 27W (Tc)	9.3 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDMC7692S_F127	Fairchild/ON Semiconductor	MOSFET N-CH 30V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,976	MOSFET (Metal Oxide)	30V	12.5A (Ta), 18A (Tc)	4.5V, 10V	3V @ 1mA	23nC @ 10V	1385pF @ 15V	±20V	-	2.3W (Ta), 27W (Tc)	9.3 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDFM2P110	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3.5A 3X3 MLP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFET 3x3mm Package / Case: 6-MLP, Power33	Package: 6-MLP, Power33	Stock182,484	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	4nC @ 4.5V	280pF @ 10V	±12V	Schottky Diode (Isolated)	2W (Ta)	140 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MicroFET 3x3mm	6-MLP, Power33
FDZ661PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2.6A 4-WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (0.80x0.80) Package / Case: 4-XFBGA, WLCSP	Package: 4-XFBGA, WLCSP	Stock4,096	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.5V, 4.5V	1.2V @ 250µA	8.8nC @ 4.5V	555pF @ 10V	±8V	-	1.3W (Ta)	140 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-WLCSP (0.80x0.80)	4-XFBGA, WLCSP
FDT86244	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2.8A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 128 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock67,500	MOSFET (Metal Oxide)	150V	2.8A (Tc)	6V, 10V	4V @ 250µA	7nC @ 10V	395pF @ 75V	±20V	-	2.2W (Ta)	128 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDMS7558S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 32A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock228,840	MOSFET (Metal Oxide)	25V	32A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	119nC @ 10V	7770pF @ 13V	±20V	-	2.5W (Ta), 89W (Tc)	1.25 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMA510PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 7.8A 6-MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock276,036	MOSFET (Metal Oxide)	20V	7.8A (Ta)	1.5V, 4.5V	1.5V @ 250µA	27nC @ 4.5V	1480pF @ 10V	±8V	-	2.4W (Ta)	30 mOhm @ 7.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FQU8P10TU	Fairchild/ON Semiconductor	MOSFET P-CH 100V 6.6A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock26,994	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	530 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQT13N06TF	Fairchild/ON Semiconductor	MOSFET N-CH 60V 2.8A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,384	MOSFET (Metal Oxide)	60V	2.8A (Tc)	10V	4V @ 250µA	7.5nC @ 10V	310pF @ 25V	±25V	-	2.1W (Tc)	140 mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDFME2P823ZT	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (1.6x1.6) Package / Case: 6-UFDFN Exposed Pad	Package: 6-UFDFN Exposed Pad	Stock2,016	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.8V, 4.5V	1V @ 250µA	7.7nC @ 4.5V	405pF @ 10V	±8V	Schottky Diode (Isolated)	1.4W (Ta)	142 mOhm @ 2.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (1.6x1.6)	6-UFDFN Exposed Pad
FDMA8884	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.5A 6-MLP 2X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock2,160	MOSFET (Metal Oxide)	30V	6.5A (Ta), 8A (Tc)	4.5V, 10V	3V @ 250µA	7.5nC @ 10V	450pF @ 15V	±20V	-	1.9W (Ta)	23 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FQD13N10TM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock588,996	MOSFET (Metal Oxide)	100V	10A (Tc)	10V	4V @ 250µA	16nC @ 10V	450pF @ 25V	±25V	-	2.5W (Ta), 40W (Tc)	180 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDME510PZT	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6-MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFet 1.6x1.6 Thin Package / Case: 6-PowerUDFN	Package: 6-PowerUDFN	Stock15,360	MOSFET (Metal Oxide)	20V	6A (Ta)	1.5V, 4.5V	1V @ 250µA	22nC @ 4.5V	1490pF @ 10V	±8V	-	2.1W (Ta)	37 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MicroFet 1.6x1.6 Thin	6-PowerUDFN
FDFME3N311ZT	Fairchild/ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 299 mOhm @ 1.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (1.6x1.6) Package / Case: 6-UFDFN Exposed Pad	Package: 6-UFDFN Exposed Pad	Stock307,464	MOSFET (Metal Oxide)	30V	1.8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	75pF @ 15V	±12V	Schottky Diode (Isolated)	1.4W (Ta)	299 mOhm @ 1.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (1.6x1.6)	6-UFDFN Exposed Pad
FQT4N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 0.83A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 830mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 415mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,044,876	MOSFET (Metal Oxide)	250V	830mA (Tc)	10V	5V @ 250µA	5.6nC @ 10V	200pF @ 25V	±30V	-	2.5W (Tc)	1.75 Ohm @ 415mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SSN1N45BTA	Fairchild/ON Semiconductor	MOSFET N-CH 450V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±50V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock305,988	MOSFET (Metal Oxide)	450V	500mA (Tc)	10V	3.7V @ 250µA	8.5nC @ 10V	240pF @ 25V	±50V	-	900mW (Ta)	4.25 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FDG315N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 2A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock601,764	MOSFET (Metal Oxide)	30V	2A (Ta)	4.5V, 10V	3V @ 250µA	4nC @ 5V	220pF @ 15V	±20V	-	750mW (Ta)	120 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
FDT86246L	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 228 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,456	MOSFET (Metal Oxide)	150V	2A (Ta)	4.5V, 10V	2.5V @ 250µA	6.3nC @ 10V	335pF @ 75V	±20V	-	1W (Ta)	228 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDT1600N10ALZ	Fairchild/ON Semiconductor	MOSFET N-CH 100V SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10.42W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,992	MOSFET (Metal Oxide)	100V	5.6A (Tc)	5V, 10V	2.8V @ 250µA	3.77nC @ 10V	225pF @ 50V	±20V	-	10.42W (Tc)	160 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDZ191P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3A 6WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP Package / Case: 6-UFBGA, WLCSP	Package: 6-UFBGA, WLCSP	Stock208,320	MOSFET (Metal Oxide)	20V	3A (Ta)	1.5V, 4.5V	1.5V @ 250µA	13nC @ 10V	800pF @ 10V	±8V	-	1.9W (Ta)	85 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WLCSP	6-UFBGA, WLCSP
FDZ391P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3A 6-WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP (1.0x1.5) Package / Case: 6-XFBGA, WLCSP	Package: 6-XFBGA, WLCSP	Stock7,872	MOSFET (Metal Oxide)	20V	3A (Ta)	1.5V, 4.5V	1.5V @ 250µA	13nC @ 4.5V	1065pF @ 10V	±8V	-	1.9W (Ta)	85 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WLCSP (1.0x1.5)	6-XFBGA, WLCSP
FDC855N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.1A 6-SSOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock293,100	MOSFET (Metal Oxide)	30V	6.1A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	655pF @ 15V	±20V	-	1.6W (Ta)	27 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDS8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 10.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 897pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,105,728	MOSFET (Metal Oxide)	30V	10.2A (Ta)	4.5V, 10V	2.5V @ 250µA	26nC @ 10V	897pF @ 15V	±20V	-	2.5W (Ta)	14 mOhm @ 10.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
HUFA75307T3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 2.6A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,540	MOSFET (Metal Oxide)	55V	2.6A (Ta)	10V	4V @ 250µA	17nC @ 20V	250pF @ 25V	±20V	-	1.1W (Ta)	90 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDMS7672	Fairchild/ON Semiconductor	MOSFET N-CH 30V 19A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2960pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock342,960	MOSFET (Metal Oxide)	30V	19A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 10V	2960pF @ 15V	±20V	-	2.5W (Ta), 48W (Tc)	5 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FQD5N15TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock240,744	MOSFET (Metal Oxide)	150V	4.3A (Tc)	10V	4V @ 250µA	7nC @ 10V	230pF @ 25V	±25V	-	2.5W (Ta), 30W (Tc)	800 mOhm @ 2.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS7678	Fairchild/ON Semiconductor	MOSFET N-CH 30V 17.5A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock53,424	MOSFET (Metal Oxide)	30V	17.5A (Ta), 26A (Tc)	4.5V, 10V	3V @ 250µA	39nC @ 10V	2410pF @ 15V	±20V	-	2.3W (Ta), 41W (Tc)	5.5 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDG313N	Fairchild/ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock1,449,624	MOSFET (Metal Oxide)	25V	950mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	±8V	-	750mW (Ta)	450 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363