Page 23 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQD2N60CTM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 1.9A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,112
FDD120AN15A0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 150V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,544
FQU2N90TU_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 900V 1.7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock14,574
FDS8449_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 7.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,608
FDD8770
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock223,956
FQU2N90TU_WS
Fairchild/ON Semiconductor

MOSFET N-CH 900V 1.7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock44,088
FDFS6N754
Fairchild/ON Semiconductor

MOSFET N-CH 30V 4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,288
FQD12N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock179,676
FDZ3N513ZT
Fairchild/ON Semiconductor

MOSFET N-CH 30V WLCSP 1X1

Package: 4-UFBGA, WLCSP

Stock3,184
FDD86380_F085
Fairchild/ON Semiconductor

MOSFET N-CH 80V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,008
FDD86580_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,184
FDMC86244
Fairchild/ON Semiconductor

MOSFET N-CH 150V 2.8A POWER33

Package: 8-PowerWDFN

Stock12,960
FDMC7672S_F126
Fairchild/ON Semiconductor

MOSFET N-CH 30V

Package: 8-PowerWDFN

Stock6,336
FDD5810_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 37A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock510,000
FDS6676AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,667,244
FDMC8327L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 12A 8MLP

Package: 8-PowerWDFN

Stock3,376
FDD6296
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock209,340
FDMC7672S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 8-MLP

Package: 8-PowerWDFN

Stock1,012,560
FDS6680AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 11.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock48,780
FDS9400A
Fairchild/ON Semiconductor

MOSFET P-CH 30V 3.4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock193,080

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQD2N60CTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1.9A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,112	MOSFET (Metal Oxide)	600V	1.9A (Tc)	10V	4V @ 250µA	12nC @ 10V	235pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	4.7 Ohm @ 950mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD120AN15A0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 150V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,544	MOSFET (Metal Oxide)	150V	14A (Tc)	10V	4V @ 250µA	14nC @ 10V	743pF @ 25V	±20V	-	65W (Tc)	120 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU2N90TU_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 900V 1.7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock14,574	MOSFET (Metal Oxide)	900V	1.7A (Tc)	10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	7.2 Ohm @ 850mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDS8449_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 7.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,608	MOSFET (Metal Oxide)	40V	7.6A (Ta)	4.5V, 10V	3V @ 250µA	11nC @ 10V	760pF @ 20V	±20V	-	2.5W (Ta)	29 mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDD8770	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock223,956	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	73nC @ 10V	3720pF @ 13V	±20V	-	115W (Tc)	4 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU2N90TU_WS	Fairchild/ON Semiconductor	MOSFET N-CH 900V 1.7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock44,088	MOSFET (Metal Oxide)	900V	1.7A (Tc)	10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	7.2 Ohm @ 850mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDFS6N754	Fairchild/ON Semiconductor	MOSFET N-CH 30V 4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,288	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 10V	299pF @ 15V	±20V	Schottky Diode (Isolated)	1.6W (Ta)	56 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD12N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock179,676	MOSFET (Metal Oxide)	200V	9A (Tc)	5V, 10V	2V @ 250µA	21nC @ 5V	1080pF @ 25V	±20V	-	2.5W (Ta), 55W (Tc)	280 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDZ3N513ZT	Fairchild/ON Semiconductor	MOSFET N-CH 30V WLCSP 1X1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.2V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 15V Vgs (Max): +5.5V, -0.3V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 462 mOhm @ 300mA, 4.5V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (1x1) Package / Case: 4-UFBGA, WLCSP	Package: 4-UFBGA, WLCSP	Stock3,184	MOSFET (Metal Oxide)	30V	1.1A (Ta)	3.2V, 4.5V	1.5V @ 250µA	1nC @ 4.5V	85pF @ 15V	+5.5V, -0.3V	Schottky Diode (Body)	1W (Ta)	462 mOhm @ 300mA, 4.5V	-55°C ~ 125°C (TJ)	Surface Mount	4-WLCSP (1x1)	4-UFBGA, WLCSP
FDD86380_F085	Fairchild/ON Semiconductor	MOSFET N-CH 80V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,008	MOSFET (Metal Oxide)	80V	50A (Tc)	10V	4V @ 250µA	30nC @ 10V	1440pF @ 40V	±20V	-	75W (Tj)	13.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86580_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 19 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,184	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4.2V @ 250µA	30nC @ 10V	1430pF @ 30V	±20V	-	75W (Tj)	19 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC86244	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2.8A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 134 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock12,960	MOSFET (Metal Oxide)	150V	2.8A (Ta), 9.4A (Tc)	6V, 10V	4V @ 250µA	5.9nC @ 10V	345pF @ 75V	±20V	-	2.3W (Ta), 26W (Tc)	134 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDMC7672S_F126	Fairchild/ON Semiconductor	MOSFET N-CH 30V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 14.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,336	MOSFET (Metal Oxide)	30V	14.8A (Ta)	4.5V, 10V	3V @ 1mA	42nC @ 10V	2520pF @ 15V	±20V	-	2.3W (Ta), 36W (Tc)	6 mOhm @ 14.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDD5810_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 37A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,000	MOSFET (Metal Oxide)	60V	7.4A (Ta), 37A (Tc)	5V, 10V	2V @ 250µA	34nC @ 10V	1890pF @ 25V	±20V	-	72W (Tc)	22 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS6676AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,667,244	MOSFET (Metal Oxide)	30V	14.5A (Ta)	4.5V, 10V	3V @ 1mA	63nC @ 10V	2510pF @ 15V	±20V	-	2.5W (Ta)	6 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC8327L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 12A 8MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,376	MOSFET (Metal Oxide)	40V	12A (Ta), 14A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1850pF @ 20V	±20V	-	2.3W (Ta), 30W (Tc)	9.7 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDD6296	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock209,340	MOSFET (Metal Oxide)	30V	15A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	31.5nC @ 10V	1440pF @ 15V	±20V	-	3.8W (Ta), 52W (Tc)	8.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC7672S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 14.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock1,012,560	MOSFET (Metal Oxide)	30V	14.8A (Ta), 18A (Tc)	4.5V, 10V	3V @ 1mA	42nC @ 10V	2520pF @ 15V	±20V	-	2.3W (Ta), 36W (Tc)	6 mOhm @ 14.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDS6680AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 11.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock48,780	MOSFET (Metal Oxide)	30V	11.5A (Ta)	4.5V, 10V	3V @ 1mA	30nC @ 10V	1240pF @ 15V	±20V	-	2.5W (Ta)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS9400A	Fairchild/ON Semiconductor	MOSFET P-CH 30V 3.4A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock193,080	MOSFET (Metal Oxide)	30V	3.4A (Ta)	4.5V, 10V	3V @ 250µA	3.5nC @ 5V	205pF @ 15V	±25V	-	2.5W (Ta)	130 mOhm @ 1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU220BTU_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock21,636	MOSFET (Metal Oxide)	200V	4.6A (Tc)	10V	4V @ 250µA	16nC @ 10V	390pF @ 25V	±30V	-	2.5W (Ta), 40W (Tc)	800 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDMC8884_F126	Fairchild/ON Semiconductor	MOSFET N-CH 30V PWR33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,928	MOSFET (Metal Oxide)	30V	9A (Ta), 15A (Tc)	4.5V, 10V	2.5V @ 250µA	14nC @ 10V	685pF @ 15V	±20V	-	2.3W (Ta), 18W (Tc)	19 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDS8817NZ	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock257,220	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	3V @ 250µA	45nC @ 10V	2400pF @ 15V	±20V	-	2.5W (Ta)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQU2N50BTU_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock37,512	MOSFET (Metal Oxide)	500V	1.6A (Tc)	10V	3.7V @ 250µA	8nC @ 10V	230pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	5.3 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDT457N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock144,720	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	3V @ 250µA	5.9nC @ 5V	235pF @ 15V	±20V	-	3W (Ta)	60 mOhm @ 5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDD050N03B	Fairchild/ON Semiconductor	MOSFET N-CH 30V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock204,624	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	3V @ 250µA	43nC @ 10V	2875pF @ 15V	±16V	-	65W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC7692S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,294,700	MOSFET (Metal Oxide)	30V	12.5A (Ta), 18A (Tc)	4.5V, 10V	3V @ 1mA	23nC @ 10V	1385pF @ 15V	±20V	-	2.3W (Ta), 27W (Tc)	9.3 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDN86265P	Fairchild/ON Semiconductor	MOSFET P-CH 150V 0.8A 3SSOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,512	MOSFET (Metal Oxide)	150V	800mA (Ta)	6V, 10V	4V @ 250µA	4.1nC @ 10V	210pF @ 75V	±25V	-	1.5W (Ta)	1.2 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3