Page 24 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQD5N60CTM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2.8A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,016
FQU20N06LTU
Fairchild/ON Semiconductor

MOSFET N-CH 60V 17.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,648
FDD26AN06A0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 7A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,688
FDPF4N60NZ
Fairchild/ON Semiconductor

MOSFET N-CH 600V 3.8A TO220F

Package: TO-220-3 Full Pack

Stock11,052
FDMS7672AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V SYNCFET POWER56

Package: 8-PowerTDFN

Stock36,996
FQT1N80TF_WS
Fairchild/ON Semiconductor

MOSFET N-CH 800V 0.2A SOT-223

Package: TO-261-4, TO-261AA

Stock2,624
FQU1N80TU
Fairchild/ON Semiconductor

MOSFET N-CH 800V 1A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock116,388
FDB3502
Fairchild/ON Semiconductor

MOSFET N-CH 75V 6A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock184,368
FDT86246
Fairchild/ON Semiconductor

MOSFET N-CH 150V 2A SOT-223

Package: TO-261-4, TO-261AA

Stock39,300
FDS3692
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.5A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock437,484
FQD10N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock30,000
FQD17N08LTM
Fairchild/ON Semiconductor

MOSFET N-CH 80V 12.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,088
FDMA7672
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6-MLP 2X2

Package: 6-VDFN Exposed Pad

Stock527,964
FDMC86265P
Fairchild/ON Semiconductor

MOSFET P-CH 150V 1A MLP

Package: 8-PowerWDFN

Stock2,400
FCD3400N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,312
FDD850N10LD
Fairchild/ON Semiconductor

MOSFET N-CH 100V 15.3A DPAK

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock426,144
NDT451AN
Fairchild/ON Semiconductor

MOSFET N-CH 30V 7.2A SOT-223-4

Package: TO-261-4, TO-261AA

Stock919,116
FCU3400N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock16,128
FDMS9410_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 50A 8PQFN

Package: 8-PowerTDFN

Stock3,232
FDMC6675BZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 9.5A POWER33

Package: 8-PowerWDFN

Stock137,796

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQD5N60CTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2.8A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,016	MOSFET (Metal Oxide)	600V	2.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	670pF @ 25V	±30V	-	2.5W (Ta), 49W (Tc)	2.5 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU20N06LTU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 17.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 8.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,648	MOSFET (Metal Oxide)	60V	17.2A (Tc)	5V, 10V	2.5V @ 250µA	13nC @ 5V	630pF @ 25V	±20V	-	2.5W (Ta), 38W (Tc)	60 mOhm @ 8.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDD26AN06A0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 7A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,688	MOSFET (Metal Oxide)	60V	7A (Ta), 36A (Tc)	10V	4V @ 250µA	17nC @ 10V	800pF @ 25V	±20V	-	75W (Tc)	26 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDPF4N60NZ	Fairchild/ON Semiconductor	MOSFET N-CH 600V 3.8A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,052	MOSFET (Metal Oxide)	600V	3.8A (Tc)	10V	5V @ 250µA	10.8nC @ 10V	510pF @ 25V	±25V	-	28W (Tc)	2.5 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDMS7672AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V SYNCFET POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock36,996	MOSFET (Metal Oxide)	30V	19A (Ta), 42A (Tc)	4.5V, 10V	3V @ 1mA	46nC @ 10V	2820pF @ 15V	±20V	-	2.5W (Ta), 46W (Tc)	4 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FQT1N80TF_WS	Fairchild/ON Semiconductor	MOSFET N-CH 800V 0.2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-3 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,624	MOSFET (Metal Oxide)	800V	200mA (Tc)	10V	5V @ 250µA	7.2nC @ 10V	195pF @ 25V	±30V	-	2.1W (Tc)	20 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
FQU1N80TU	Fairchild/ON Semiconductor	MOSFET N-CH 800V 1A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock116,388	MOSFET (Metal Oxide)	800V	1A (Tc)	10V	5V @ 250µA	7.2nC @ 10V	195pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	20 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDB3502	Fairchild/ON Semiconductor	MOSFET N-CH 75V 6A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock184,368	MOSFET (Metal Oxide)	75V	6A (Ta), 14A (Tc)	10V	4.5V @ 250µA	15nC @ 10V	815pF @ 40V	±20V	-	3.1W (Ta), 41W (Tc)	47 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDT86246	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 236 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock39,300	MOSFET (Metal Oxide)	150V	2A (Ta)	6V, 10V	4V @ 250µA	4nC @ 10V	215pF @ 75V	±20V	-	2.2W (Ta)	236 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDS3692	Fairchild/ON Semiconductor	MOSFET N-CH 100V 4.5A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 746pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock437,484	MOSFET (Metal Oxide)	100V	4.5A (Ta)	6V, 10V	4V @ 250µA	15nC @ 10V	746pF @ 25V	±20V	-	2.5W (Ta)	60 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD10N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock30,000	MOSFET (Metal Oxide)	200V	7.6A (Tc)	5V, 10V	2V @ 250µA	17nC @ 5V	830pF @ 25V	±20V	-	2.5W (Ta), 51W (Tc)	360 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD17N08LTM	Fairchild/ON Semiconductor	MOSFET N-CH 80V 12.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 6.45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,088	MOSFET (Metal Oxide)	80V	12.9A (Tc)	5V, 10V	2V @ 250µA	11.5nC @ 5V	520pF @ 25V	±20V	-	2.5W (Ta), 40W (Tc)	100 mOhm @ 6.45A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMA7672	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6-MLP 2X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock527,964	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	760pF @ 15V	±20V	-	2.4W (Ta)	21 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDMC86265P	Fairchild/ON Semiconductor	MOSFET P-CH 150V 1A MLP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 16W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,400	MOSFET (Metal Oxide)	150V	1A (Ta), 1.8A (Tc)	6V, 10V	4V @ 250µA	4nC @ 10V	210pF @ 75V	±25V	-	2.3W (Ta), 16W (Tc)	1.2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3), Power33	8-PowerWDFN
FCD3400N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,312	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	4.5V @ 200µA	9.6nC @ 10V	400pF @ 100V	±20V	-	32W (Tc)	3.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD850N10LD	Fairchild/ON Semiconductor	MOSFET N-CH 100V 15.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-5 Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock426,144	MOSFET (Metal Oxide)	100V	15.3A (Tc)	5V, 10V	2.5V @ 250µA	28.9nC @ 10V	1465pF @ 25V	±20V	-	42W (Tc)	75 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5	TO-252-5, DPak (4 Leads + Tab), TO-252AD
NDT451AN	Fairchild/ON Semiconductor	MOSFET N-CH 30V 7.2A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.2A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock919,116	MOSFET (Metal Oxide)	30V	7.2A (Ta)	4.5V, 10V	3V @ 250µA	30nC @ 10V	720pF @ 15V	±20V	-	3W (Ta)	35 mOhm @ 7.2A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FCU3400N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock16,128	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	4.5V @ 200µA	9.6nC @ 10V	400pF @ 100V	±20V	-	32W (Tc)	3.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDMS9410_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 50A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,232	MOSFET (Metal Oxide)	40V	50A (Tc)	10V	4V @ 250µA	36nC @ 10V	1790pF @ 20V	±20V	-	75W (Tj)	4.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMC6675BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 9.5A POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock137,796	MOSFET (Metal Oxide)	30V	9.5A (Ta), 20A (Tc)	4.5V, 10V	3V @ 250µA	65nC @ 10V	2865pF @ 15V	±25V	-	2.3W (Ta), 36W (Tc)	14.4 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FDMS9410L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 50A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,576	MOSFET (Metal Oxide)	40V	50A (Tc)	10V	3V @ 250µA	45nC @ 10V	1960pF @ 20V	±20V	-	75W (Tj)	4.1 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDD7N25LZTM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 6.2A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock52,800	MOSFET (Metal Oxide)	250V	6.2A (Tc)	5V, 10V	2V @ 250µA	16nC @ 10V	635pF @ 25V	±20V	-	56W (Tc)	550 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FCU900N60Z	Fairchild/ON Semiconductor	MOSFET N CH 600V 4.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock12,510	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	3.5V @ 250µA	17nC @ 10V	710pF @ 25V	±20V	-	52W (Tc)	900 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPak
HUFA75321D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,060	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	36 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75321D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock379,536	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	36 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FCD900N60Z	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.5A TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,072	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	3.5V @ 250µA	17nC @ 10V	720pF @ 25V	±20V	-	52W (Tc)	900 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS5361L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 35A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,872	MOSFET (Metal Oxide)	60V	35A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 10V	1980pF @ 25V	±20V	-	75W (Tc)	15 mOhm @ 16.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDB390N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 27A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,372	MOSFET (Metal Oxide)	150V	27A (Tc)	10V	4V @ 250µA	18.6nC @ 10V	1285pF @ 75V	±20V	-	75W (Tc)	39 mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB