Page 51 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FQU10N20CTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock45,684
FDD86581_F085
Fairchild/ON Semiconductor

MV7 60/20V 1000A N-CHANNEL POWER

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,888
FDMA410NZT
Fairchild/ON Semiconductor

SINGLE PT4 NCH 20/8V ZENER IN ML

Package: 8-UDFN Exposed Pad

Stock4,688
SSR1N60BTM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,160
IRLM120ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.3A SOT-223

Package: TO-261-4, TO-261AA

Stock59,916
SSU1N60BTU_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,888
FDZ193P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A 8-WLCSP

Package: 6-UFBGA, WLCSP

Stock600,120
FDV045P20L
Fairchild/ON Semiconductor

PT8P 20V/8V SINGLE SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,104
FDC30N20DZ
Fairchild/ON Semiconductor

PT8 30/20 WITH ZENER IN SSOT6 DU

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,008
FDMA008P20LZ
Fairchild/ON Semiconductor

PT8PZ 20/8V VIS WITH 2.05X2.05 P

Package: 6-PowerWDFN

Stock7,680
FDN028N20
Fairchild/ON Semiconductor

PT8 20/12V NCH POWERTRENCH MOSFE

Package: TO-236-3, SC-59, SOT-23-3

Stock2,128
BSS138_F085
Fairchild/ON Semiconductor

MOSFET N-CH SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,784
FCPF165N65S3L1
Fairchild/ON Semiconductor

MOSFET N-CH 650V 19A TO220F-3

Package: TO-220-3 Full Pack

Stock3,120
FDMS86180
Fairchild/ON Semiconductor

MOSFET N-CH 100V 151A 8PQFN

Package: 8-PowerTDFN

Stock7,712
FDMC86012
Fairchild/ON Semiconductor

MOSFET N-CH 30V 23A 8MLP

Package: 8-PowerWDFN

Stock7,136
FDMS1D4N03S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 211A 8PQFN

Package: 8-PowerTDFN

Stock5,408
FDMS1D5N03
Fairchild/ON Semiconductor

MOSFET N-CH 30V 218A 8PQFN

Package: 8-PowerTDFN

Stock4,096
FDMS86183
Fairchild/ON Semiconductor

MOSFET N-CH 100V 51A 8PQFN

Package: 8-PowerTDFN

Stock6,896
FDN5632N_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 1.7A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock128,472
FCA16N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-3PN

Package: TO-3P-3, SC-65-3

Stock3,920

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQU10N20CTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock45,684	MOSFET (Metal Oxide)	200V	7.8A (Tc)	10V	4V @ 250µA	26nC @ 10V	510pF @ 25V	±30V	-	50W (Tc)	360 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDD86581_F085	Fairchild/ON Semiconductor	MV7 60/20V 1000A N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tj) Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,888	MOSFET (Metal Oxide)	60V	25A (Tc)	10V	4V @ 250µA	19nC @ 10V	-	±20V	-	48.4W (Tj)	15 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMA410NZT	Fairchild/ON Semiconductor	SINGLE PT4 NCH 20/8V ZENER IN ML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-UDFN Exposed Pad	Package: 8-UDFN Exposed Pad	Stock4,688	MOSFET (Metal Oxide)	20V	9.5A (Ta)	1.5V, 4.5V	1V @ 250µA	14nC @ 4.5V	1310pF @ 10V	±8V	-	2.4W (Ta)	23 mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	-	8-UDFN Exposed Pad
SSR1N60BTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,160	MOSFET (Metal Oxide)	600V	900mA (Tc)	10V	4V @ 250µA	7.7nC @ 10V	215pF @ 25V	±30V	-	2.5W (Ta), 28W (Tc)	12 Ohm @ 450mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLM120ATF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 2.3A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.15A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock59,916	MOSFET (Metal Oxide)	100V	2.3A (Tc)	5V	2V @ 250µA	15nC @ 5V	440pF @ 25V	±20V	-	2.7W (Tc)	220 mOhm @ 1.15A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SSU1N60BTU_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,888	MOSFET (Metal Oxide)	600V	900mA (Tc)	10V	4V @ 250µA	7.7nC @ 10V	215pF @ 25V	±30V	-	2.5W (Ta), 28W (Tc)	12 Ohm @ 450mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDZ193P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3A 8-WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP Package / Case: 6-UFBGA, WLCSP	Package: 6-UFBGA, WLCSP	Stock600,120	MOSFET (Metal Oxide)	20V	3A (Ta)	1.7V, 4.5V	1.5V @ 250µA	10nC @ 10V	660pF @ 10V	±12V	-	1.9W (Ta)	90 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WLCSP	6-UFBGA, WLCSP
FDV045P20L	Fairchild/ON Semiconductor	PT8P 20V/8V SINGLE SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,104	MOSFET (Metal Oxide)	20V	1.15A (Ta)	1.8V, 4.5V	1.5V @ 250µA	10nC @ 4.5V	1220pF @ 10V	±8V	-	1.6W (Ta)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDC30N20DZ	Fairchild/ON Semiconductor	PT8 30/20 WITH ZENER IN SSOT6 DU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,008	MOSFET (Metal Oxide)	30V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	7.9nC @ 10V	535pF @ 15V	±20V	-	960mW (Ta)	31 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6 Thin, TSOT-23-6
FDMA008P20LZ	Fairchild/ON Semiconductor	PT8PZ 20/8V VIS WITH 2.05X2.05 P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerWDFN	Package: 6-PowerWDFN	Stock7,680	MOSFET (Metal Oxide)	20V	12A (Ta)	1.5V, 4.5V	1.4V @ 250µA	39nC @ 4.5V	-	±8V	-	2.4W (Ta)	-	-55°C ~ 150°C (TJ)	Surface Mount	6-PQFN (2x2)	6-PowerWDFN
FDN028N20	Fairchild/ON Semiconductor	PT8 20/12V NCH POWERTRENCH MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,128	MOSFET (Metal Oxide)	20V	6.1A (Tc)	2.5V, 4.5V	1.5V @ 250µA	6nC @ 4.5V	600pF @ 10V	±12V	-	1.5W (Tc)	28 mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS138_F085	Fairchild/ON Semiconductor	MOSFET N-CH SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,784	MOSFET (Metal Oxide)	50V	220mA (Ta)	4.5V, 10V	1.5V @ 1mA	2.4nC @ 10V	27pF @ 25V	±20V	-	360mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FCPF165N65S3L1	Fairchild/ON Semiconductor	MOSFET N-CH 650V 19A TO220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,120	MOSFET (Metal Oxide)	650V	19A (Tc)	10V	4.5V @ 1.9mA	35nC @ 10V	1415pF @ 400V	±30V	-	35W (Tc)	165 mOhm @ 9.5A, 10V	-55°C ~ 150°C	Through Hole	TO-220F-3	TO-220-3 Full Pack
FDMS86180	Fairchild/ON Semiconductor	MOSFET N-CH 100V 151A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 151A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 370µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,712	MOSFET (Metal Oxide)	100V	151A (Tc)	6V, 10V	4V @ 370µA	54nC @ 6V	6215pF @ 50V	±20V	-	138W (Tc)	3.2 mOhm @ 67A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMC86012	Fairchild/ON Semiconductor	MOSFET N-CH 30V 23A 8MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5075pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 23A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,136	MOSFET (Metal Oxide)	30V	23A (Ta)	2.5V, 4.5V	1.5V @ 250µA	38nC @ 4.5V	5075pF @ 15V	±12V	-	2.3W (Ta), 54W (Tc)	2.7 mOhm @ 23A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerWDFN
FDMS1D4N03S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 211A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 211A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 10250pF @ 15V Vgs (Max): ±16V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.09 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,408	MOSFET (Metal Oxide)	30V	211A (Tc)	4.5V, 10V	3V @ 1mA	65nC @ 4.5V	10250pF @ 15V	±16V	Schottky Diode (Body)	74W (Tc)	1.09 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMS1D5N03	Fairchild/ON Semiconductor	MOSFET N-CH 30V 218A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 218A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9690pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,096	MOSFET (Metal Oxide)	30V	218A (Tc)	4.5V, 10V	2V @ 250µA	63nC @ 4.5V	9690pF @ 15V	±16V	-	83W (Tc)	1.15 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDMS86183	Fairchild/ON Semiconductor	MOSFET N-CH 100V 51A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,896	MOSFET (Metal Oxide)	100V	51A (Tc)	6V, 10V	4V @ 90µA	14nC @ 6V	1515pF @ 50V	±20V	-	63W (Tc)	12.8 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDN5632N_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 1.7A SSOT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 82 mOhm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock128,472	MOSFET (Metal Oxide)	60V	1.7A (Ta)	4.5V, 10V	3V @ 250µA	12nC @ 10V	475pF @ 15V	±20V	-	1.1W (Ta)	82 mOhm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
FCA16N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 134.4W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,920	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	52.3nC @ 10V	2170pF @ 100V	±30V	-	134.4W (Tc)	199 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FDP8N50NZ	Fairchild/ON Semiconductor	MOSFET N-CH 500V TO-220AB-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock13,320	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 250µA	18nC @ 10V	735pF @ 25V	±25V	-	130W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCP22N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 22A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±45V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,832	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 250µA	45nC @ 10V	1950pF @ 100V	±45V	-	205W (Tc)	165 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDA33N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 33A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock390,000	MOSFET (Metal Oxide)	250V	33A (Tc)	10V	5V @ 250µA	46.8nC @ 10V	2200pF @ 25V	±30V	-	245W (Tc)	94 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQA9N90C_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 9A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,704	MOSFET (Metal Oxide)	900V	9A (Tc)	10V	5V @ 250µA	58nC @ 10V	2730pF @ 25V	±30V	-	280W (Tc)	1.4 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQPF20N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 15A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,000	MOSFET (Metal Oxide)	60V	15A (Tc)	10V	4V @ 250µA	15nC @ 10V	590pF @ 25V	±25V	-	30W (Tc)	60 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQU2N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1.9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,496	MOSFET (Metal Oxide)	600V	1.9A (Tc)	10V	4V @ 250µA	12nC @ 10V	235pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	4.7 Ohm @ 950mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDD6530A	Fairchild/ON Semiconductor	MOSFET N-CH 20V 21A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock15,264	MOSFET (Metal Oxide)	20V	21A (Ta)	2.5V, 4.5V	1.2V @ 250µA	9nC @ 4.5V	710pF @ 10V	±8V	-	3.3W (Ta), 33W (Tc)	32 mOhm @ 8A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC7692	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock1,421,784	MOSFET (Metal Oxide)	30V	13.3A (Ta), 16A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 10V	1680pF @ 15V	±20V	-	2.3W (Ta), 29W (Tc)	8.5 mOhm @ 13.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN