Page 54 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDMS10C4D2N
Fairchild/ON Semiconductor

PTNG 100V/20V NCH POWER TRENCH M

Package: 8-PowerSMD, Flat Leads

Stock5,968
FDMS8050
Fairchild/ON Semiconductor

PT8 N 30/20 IN POWERCLIP 56 SING

Package: 8-PowerTDFN

Stock8,616
FDB2552_F085
Fairchild/ON Semiconductor

MOSFET N CH 150V 5A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,328
FDP100N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-220

Package: TO-220-3

Stock170,160
FDMS004N08C
Fairchild/ON Semiconductor

80V/20V N-CHANNEL PTNG MOSFET

Package: -

Stock3,536
FDMS4D4N08C
Fairchild/ON Semiconductor

PTNG 80/20V NCH POWER TRENCH MOS

Package: -

Stock5,488
FDMS86181
Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A POWER56

Package: 8-PowerTDFN

Stock4,176
FDP060AN08A0
Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-220AB

Package: TO-220-3

Stock37,092
FDBL86566_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 240A MO299A

Package: 8-PowerSFN

Stock4,992
FCPF190N60_F152
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20.2A TO-220F

Package: TO-220-3 Full Pack

Stock4,768
HUF75639P3_F102
Fairchild/ON Semiconductor

PWR MOS ULTRAFET 100V/53A/0.025

Package: TO-220-3

Stock5,488
FDB9409L_F085
Fairchild/ON Semiconductor

PT8 40V LL N-CHANNEL POWERTRENCH

Package: -

Stock2,880
FQB22P10TM_F085
Fairchild/ON Semiconductor

MOSFET P-CH 100V 22A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,432
FQB7N60TM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,184
FQP6N70
Fairchild/ON Semiconductor

MOSFET N-CH 700V 6.2A TO-220

Package: TO-220-3

Stock12,480
FCPF7N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A TO220F

Package: TO-220-3 Full Pack

Stock19,392
FQPF10N50CF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 10A TO-220F

Package: TO-220-3 Full Pack

Stock18,576
FDD6796A
Fairchild/ON Semiconductor

MOSFET NCH 25V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock13,500
FQPF45N15V2
Fairchild/ON Semiconductor

MOSFET N-CH 150V 45A TO-TO-220F

Package: TO-220-3 Full Pack

Stock4,064
FDD5N50FTM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,296

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDMS10C4D2N	Fairchild/ON Semiconductor	PTNG 100V/20V NCH POWER TRENCH M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,968	MOSFET (Metal Oxide)	100V	17A (Tc)	6V, 10V	4V @ 250µA	65nC @ 10V	4500pF @ 50V	±20V	-	125W (Tc)	4.2 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerSMD, Flat Leads
FDMS8050	Fairchild/ON Semiconductor	PT8 N 30/20 IN POWERCLIP 56 SING FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22610pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock8,616	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	3V @ 750µA	285nC @ 10V	22610pF @ 15V	±20V	-	156W (Tc)	0.65 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
FDB2552_F085	Fairchild/ON Semiconductor	MOSFET N CH 150V 5A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,328	MOSFET (Metal Oxide)	150V	5A (Ta), 37A (Tc)	10V	4V @ 250µA	51nC @ 10V	2800pF @ 25V	±20V	-	150W (Tc)	36 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDP100N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 75A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock170,160	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	4.5V @ 250µA	100nC @ 10V	7300pF @ 25V	±20V	-	208W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMS004N08C	Fairchild/ON Semiconductor	80V/20V N-CHANNEL PTNG MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS4D4N08C	Fairchild/ON Semiconductor	PTNG 80/20V NCH POWER TRENCH MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS86181	Fairchild/ON Semiconductor	MOSFET N-CH 100V 44A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4125pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,176	MOSFET (Metal Oxide)	100V	44A (Ta), 124A (Tc)	6V, 10V	4V @ 250µA	59nC @ 10V	4125pF @ 50V	±20V	-	2.5W (Ta), 125W (Tc)	4.2 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDP060AN08A0	Fairchild/ON Semiconductor	MOSFET N-CH 75V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock37,092	MOSFET (Metal Oxide)	75V	16A (Ta), 80A (Tc)	6V, 10V	4V @ 250µA	95nC @ 10V	5150pF @ 25V	±20V	-	255W (Tc)	6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDBL86566_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 240A MO299A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6655pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock4,992	MOSFET (Metal Oxide)	60V	240A (Tc)	10V	4V @ 250µA	110nC @ 10V	6655pF @ 30V	±20V	-	300W (Tj)	2.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FCPF190N60_F152	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20.2A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,768	MOSFET (Metal Oxide)	600V	20.2A (Tc)	10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	±20V	-	39W (Tc)	199 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
HUF75639P3_F102	Fairchild/ON Semiconductor	PWR MOS ULTRAFET 100V/53A/0.025 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,488	MOSFET (Metal Oxide)	100V	56A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	25 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDB9409L_F085	Fairchild/ON Semiconductor	PT8 40V LL N-CHANNEL POWERTRENCH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,880	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQB22P10TM_F085	Fairchild/ON Semiconductor	MOSFET P-CH 100V 22A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,432	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	4V @ 250µA	50nC @ 10V	1500pF @ 25V	±30V	-	3.75W (Ta), 125W (Tc)	125 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB7N60TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,184	MOSFET (Metal Oxide)	600V	7.4A (Tc)	10V	5V @ 250µA	38nC @ 10V	1430pF @ 25V	±30V	-	3.13W (Ta), 142W (Tc)	1 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP6N70	Fairchild/ON Semiconductor	MOSFET N-CH 700V 6.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock12,480	MOSFET (Metal Oxide)	700V	6.2A (Tc)	10V	5V @ 250µA	40nC @ 10V	1400pF @ 25V	±30V	-	142W (Tc)	1.5 Ohm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCPF7N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,392	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	31W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF10N50CF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 10A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2096pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 610 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,576	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	56nC @ 10V	2096pF @ 25V	±30V	-	48W (Tc)	610 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDD6796A	Fairchild/ON Semiconductor	MOSFET NCH 25V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock13,500	MOSFET (Metal Oxide)	25V	20A (Ta), 40A (Tc)	4.5V, 10V	3V @ 250µA	34nC @ 10V	1780pF @ 13V	±20V	-	3.7W (Ta), 42W (Tc)	5.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF45N15V2	Fairchild/ON Semiconductor	MOSFET N-CH 150V 45A TO-TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,064	MOSFET (Metal Oxide)	150V	45A (Tc)	10V	4V @ 250µA	94nC @ 10V	3030pF @ 25V	±30V	-	66W (Tc)	40 mOhm @ 22.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDD5N50FTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 3.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,296	MOSFET (Metal Oxide)	500V	3.5A (Tc)	10V	5V @ 250µA	15nC @ 10V	650pF @ 25V	±30V	-	40W (Tc)	1.55 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDP3652	Fairchild/ON Semiconductor	MOSFET N-CH 100V 61A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 61A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock649,968	MOSFET (Metal Oxide)	100V	9A (Ta), 61A (Tc)	6V, 10V	4V @ 250µA	53nC @ 10V	2880pF @ 25V	±20V	-	150W (Tc)	16 mOhm @ 61A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCP380N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1665pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,544	MOSFET (Metal Oxide)	600V	10.2A (Tc)	10V	3.5V @ 250µA	40nC @ 10V	1665pF @ 25V	±20V	-	106W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMC013P030Z	Fairchild/ON Semiconductor	PT8 P Z -30V/-25V ZENER POWERTRE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,264	MOSFET (Metal Oxide)	30V	54A (Tc)	4.5V, 10V	3V @ 250µA	135nC @ 10V	-	±25V	-	30W (Tc)	7 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
FQPF5P20RDTU	Fairchild/ON Semiconductor	PCH 500V 2A MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,760	MOSFET (Metal Oxide)	200V	2.15A (Tc)	10V	5V @ 250µA	13nC @ 10V	430pF @ 25V	±30V	-	38W (Tc)	1.4 Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP12N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock15,816	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	63nC @ 10V	2290pF @ 25V	±30V	-	225W (Tc)	650 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQB8N60CTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock355,488	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	36nC @ 10V	1255pF @ 25V	±30V	-	3.13W (Ta), 147W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCPF11N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 11A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock161,460	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	52nC @ 10V	1490pF @ 25V	±30V	-	36W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCU5N60TU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.6A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,808	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	5V @ 250µA	16nC @ 10V	600pF @ 25V	±30V	-	54W (Tc)	950 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA