Page 53 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FDD86367
Fairchild/ON Semiconductor

MV7 80/20V 1000A N-CHANNEL POWER

Package: -

Stock7,328
FDD2670
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.6A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock67,080
FQD3P50TM_AM002BLT
Fairchild/ON Semiconductor

P-CH/500V/2.1A/4.9OHM

Package: -

Stock3,424
FQP6N60C
Fairchild/ON Semiconductor

MOSFET N-CH 600V 5.5A TO-220

Package: TO-220-3

Stock134,508
FDPF12N50FT
Fairchild/ON Semiconductor

MOSFET N-CH 500V 11.5A TO-220F

Package: TO-220-3 Full Pack

Stock19,200
FDPF33N25TRDTU
Fairchild/ON Semiconductor

UNIFET 250V

Package: TO-220-3 Full Pack

Stock2,752
FDMS8026S
Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER56

Package: 8-PowerTDFN

Stock12,480
FCPF380N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220-3

Package: TO-220-3 Full Pack

Stock6,024
FDMC008N08C
Fairchild/ON Semiconductor

80V/20V N-CHANNEL PTNG MOSFET

Package: -

Stock5,760
FDMC007N08LC
Fairchild/ON Semiconductor

80V/20V N-CHANNEL PTNG MOSFET

Package: -

Stock3,200
NDB5060L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 26A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock122,748
FQPF5N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 3A TO-220F

Package: TO-220-3 Full Pack

Stock3,504
FDMC86320
Fairchild/ON Semiconductor

MOSFET N CH 80V 10.7A 8-MLP

Package: 8-PowerWDFN

Stock3,360
FQPF70N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 35A TO-220F

Package: TO-220-3 Full Pack

Stock11,520
FQPF10N60C
Fairchild/ON Semiconductor

MOSFET N-CH 600V 9.5A TO-220F

Package: TO-220-3 Full Pack

Stock6,256
FQP6N80C
Fairchild/ON Semiconductor

MOSFET N-CH 800V 5.5A TO-220

Package: TO-220-3

Stock528,840
FQP13N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 13A TO-220

Package: TO-220-3

Stock16,632
FQP8N60C
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.5A TO-220

Package: TO-220-3

Stock4,656
FDMC8360LET40
Fairchild/ON Semiconductor

PT8 N-CH 40/20V POWER TRENCH MOS

Package: 8-PowerWDFN

Stock7,888
FDWS9408_F085
Fairchild/ON Semiconductor

N-CHANNEL POWER TRENCH MOSFET

Package: 8-PowerTDFN

Stock7,856

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDD86367	Fairchild/ON Semiconductor	MV7 80/20V 1000A N-CHANNEL POWER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDD2670	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.6A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1228pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock67,080	MOSFET (Metal Oxide)	200V	3.6A (Ta)	10V	4.5V @ 250µA	43nC @ 10V	1228pF @ 100V	±20V	-	3.2W (Ta), 70W (Tc)	130 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD3P50TM_AM002BLT	Fairchild/ON Semiconductor	P-CH/500V/2.1A/4.9OHM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,424	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQP6N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock134,508	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	±30V	-	125W (Tc)	2 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDPF12N50FT	Fairchild/ON Semiconductor	MOSFET N-CH 500V 11.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,200	MOSFET (Metal Oxide)	500V	11.5A (Tc)	10V	5V @ 250µA	30nC @ 10V	1395pF @ 25V	±30V	-	42W (Tc)	700 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDPF33N25TRDTU	Fairchild/ON Semiconductor	UNIFET 250V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2135pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,752	MOSFET (Metal Oxide)	250V	-	10V	5V @ 250µA	48nC @ 10V	2135pF @ 25V	±30V	-	37W (Tc)	94 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDMS8026S	Fairchild/ON Semiconductor	MOSFET N-CH 30V POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock12,480	MOSFET (Metal Oxide)	30V	19A (Ta), 22A (Tc)	4.5V, 10V	3V @ 1mA	37nC @ 10V	2280pF @ 15V	±20V	-	2.5W (Ta), 41W (Tc)	4.3 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FCPF380N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1665pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,024	MOSFET (Metal Oxide)	600V	10.2A (Tc)	10V	3.5V @ 250µA	40nC @ 10V	1665pF @ 25V	±20V	-	31W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDMC008N08C	Fairchild/ON Semiconductor	80V/20V N-CHANNEL PTNG MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,760	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMC007N08LC	Fairchild/ON Semiconductor	80V/20V N-CHANNEL PTNG MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NDB5060L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 26A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock122,748	MOSFET (Metal Oxide)	60V	26A (Tc)	5V, 10V	2V @ 250µA	24nC @ 5V	840pF @ 30V	±16V	-	68W (Tc)	35 mOhm @ 13A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF5N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 3A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,504	MOSFET (Metal Oxide)	900V	3A (Tc)	10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	±30V	-	51W (Tc)	2.3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDMC86320	Fairchild/ON Semiconductor	MOSFET N CH 80V 10.7A 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,360	MOSFET (Metal Oxide)	80V	10.7A (Ta), 22A (Tc)	8V, 10V	4.5V @ 250µA	41nC @ 10V	2640pF @ 40V	±20V	-	2.3W (Ta), 40W (Tc)	11.7 mOhm @ 10.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3), Power33	8-PowerWDFN
FQPF70N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 35A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,520	MOSFET (Metal Oxide)	100V	35A (Tc)	10V	4V @ 250µA	110nC @ 10V	3300pF @ 25V	±25V	-	62W (Tc)	23 mOhm @ 17.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQPF10N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 9.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,256	MOSFET (Metal Oxide)	600V	9.5A (Tc)	10V	4V @ 250µA	57nC @ 10V	2040pF @ 25V	±30V	-	50W (Tc)	730 mOhm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP6N80C	Fairchild/ON Semiconductor	MOSFET N-CH 800V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock528,840	MOSFET (Metal Oxide)	800V	5.5A (Tc)	10V	5V @ 250µA	30nC @ 10V	1310pF @ 25V	±30V	-	158W (Tc)	2.5 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQP13N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 13A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock16,632	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	56nC @ 10V	2055pF @ 25V	±30V	-	195W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQP8N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,656	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	36nC @ 10V	1255pF @ 25V	±30V	-	147W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMC8360LET40	Fairchild/ON Semiconductor	PT8 N-CH 40/20V POWER TRENCH MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 141A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,888	MOSFET (Metal Oxide)	40V	27A (Ta), 141A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	5300pF @ 20V	±20V	-	2.8W (Ta), 75W (Tc)	2.1 mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power33	8-PowerWDFN
FDWS9408_F085	Fairchild/ON Semiconductor	N-CHANNEL POWER TRENCH MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tj) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,856	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	92nC @ 10V	-	±20V	-	214W (Tj)	1.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
FDD86369	Fairchild/ON Semiconductor	MV7 80/20V 1000A N-CHANNEL POWER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,736	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQD6N60CTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,256	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	±30V	-	80W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDFMA2P857	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3A MICROFET2X2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock13,644	MOSFET (Metal Oxide)	20V	3A (Ta)	1.8V, 4.5V	1.3V @ 250µA	6nC @ 4.5V	435pF @ 10V	±8V	Schottky Diode (Isolated)	1.4W (Ta)	120 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
FDMS9409L_F085	Fairchild/ON Semiconductor	N-CHANNEL POWER TRENCH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS36101L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3945pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,832	MOSFET (Metal Oxide)	100V	38A (Tc)	4.5V, 10V	3V @ 250µA	84nC @ 10V	3945pF @ 25V	±20V	-	94W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDMC86183	Fairchild/ON Semiconductor	PTNG 100/20V NCH TRENCH MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,928	MOSFET (Metal Oxide)	100V	47A (Tc)	6V, 10V	4V @ 90µA	21nC @ 10V	1515pF @ 50V	±20V	-	52W (Tc)	12.8 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerWDFN
FDD8N50NZTM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,968	MOSFET (Metal Oxide)	500V	6.5A (Tc)	10V	5V @ 250µA	18nC @ 10V	735pF @ 25V	±25V	-	90W (Tc)	850 mOhm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQP3N50C_F080	Fairchild/ON Semiconductor	CFET 3A / 500V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,152	MOSFET (Metal Oxide)	500V	1.8A (Tc)	10V	4V @ 250µA	13nC @ 10V	365pF @ 25V	±30V	-	62W (Tc)	2.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3