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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock204,480 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 3V @ 250µA | 17nC @ 10V | 350pF @ 15V | ±20V | Schottky Diode (Isolated) | 900mW (Ta) | 35 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
- Vgs (Max): ±25V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,488 |
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MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 8nC @ 5V | 528pF @ 15V | ±25V | Schottky Diode (Isolated) | 900mW (Ta) | 59 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V
- Vgs (Max): ±25V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,168 |
|
MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 8nC @ 5V | 535pF @ 15V | ±25V | Schottky Diode (Isolated) | 900mW (Ta) | 59 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 3.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,296 |
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MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 4.5V, 10V | 2V @ 250µA | 10nC @ 10V | 270pF @ 10V | ±20V | Schottky Diode (Isolated) | 900mW (Ta) | 125 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 3.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 10V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,025,388 |
|
MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 3nC @ 5V | 182pF @ 10V | ±20V | Schottky Diode (Isolated) | 900mW (Ta) | 125 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 12.5A SSOT-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1444pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6 FLMP
- Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
|
Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
Stock842,640 |
|
MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 5V | 1444pF @ 15V | ±20V | - | 2W (Ta) | 9 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 FLMP | 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 7A SSOT-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6 FLMP
- Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
|
Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
Stock4,240 |
|
MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 38nC @ 5V | 2640pF @ 10V | ±12V | - | 2W (Ta) | 22 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 FLMP | 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 8A SSOT-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3524pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6 FLMP
- Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
|
Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
Stock7,664 |
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MOSFET (Metal Oxide) | 20V | 8A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 55nC @ 4.5V | 3524pF @ 10V | ±8V | - | 2W (Ta) | 20 mOhm @ 8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 FLMP | 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 3.7A SSOT-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1215pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6 FLMP
- Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
|
Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
Stock3,712 |
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MOSFET (Metal Oxide) | 100V | 3.7A (Ta) | 6V, 10V | 4V @ 250µA | 32nC @ 10V | 1215pF @ 50V | ±20V | - | 2W (Ta) | 70 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 FLMP | 6-SSOT Flat-lead, SuperSOT?-6 FLMP |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 20A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock160,740 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | ±30V | - | 208W (Tc) | 190 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 10.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock385,920 |
|
MOSFET (Metal Oxide) | 20V | 10.5A (Ta) | 2.7V, 4.5V | 1V @ 250µA | 60nC @ 4.5V | 2150pF @ 10V | ±8V | - | 2.5W (Ta) | 13.5 mOhm @ 10.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 1.3A SSOT-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock570,216 |
|
MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 330pF @ 10V | ±8V | - | 500mW (Ta) | 200 mOhm @ 1.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 250V 3.1A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1.55A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,080 |
|
MOSFET (Metal Oxide) | 250V | 3.1A (Tc) | 10V | 5V @ 250µA | 14nC @ 10V | 420pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 2.1 Ohm @ 1.55A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,056 |
|
MOSFET (Metal Oxide) | 250V | 3A (Tc) | 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | ±30V | - | 2.5W (Ta), 37W (Tc) | 1.75 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 1.7A SSOT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
- Vgs (Max): 8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,732,296 |
|
MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.7V, 4.5V | 1V @ 250µA | 9nC @ 4.5V | 240pF @ 10V | 8V | - | 500mW (Ta) | 110 mOhm @ 1.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 45A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 131W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock64,464 |
|
MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 4V @ 250µA | 150nC @ 20V | 2050pF @ 25V | ±20V | - | 131W (Tc) | 28 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 40A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock158,784 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 4V @ 250µA | 300nC @ 20V | - | ±20V | - | 160W (Tc) | 40 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 30A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
- Vgs (Max): +10V, -8V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 30A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock110,508 |
|
MOSFET (Metal Oxide) | 60V | 30A (Ta) | 5V | 2V @ 250µA | 62nC @ 10V | 1350pF @ 25V | +10V, -8V | - | 96W (Tc) | 47 mOhm @ 30A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 11A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock145,908 |
|
MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | ±16V | - | 38W (Tc) | 107 mOhm @ 8A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 2A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 2A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock60,012 |
|
MOSFET (Metal Oxide) | 100V | 2A (Tc) | 5V | 2V @ 250µA | - | 200pF @ 25V | ±10V | - | 25W (Tc) | 1.05 Ohm @ 2A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Fairchild/ON Semiconductor |
MOSFET P-CH 50V 15A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock91,932 |
|
MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 4V @ 250µA | 150nC @ 20V | 1150pF @ 25V | ±20V | - | 80W (Tc) | 150 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 70A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock40,440 |
|
MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 4V @ 250µA | 156nC @ 20V | 2250pF @ 25V | ±20V | - | 150W (Tc) | 14 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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|
Fairchild/ON Semiconductor |
MOSFET P-CH 50V 60A TO-247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 450nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock41,616 |
|
MOSFET (Metal Oxide) | 50V | 60A (Tc) | 10V | 4V @ 250µA | 450nC @ 20V | 7200pF @ 25V | ±20V | - | 215W (Tc) | 30 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 50V 8A I-PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock31,440 |
|
MOSFET (Metal Oxide) | 50V | 8A (Tc) | 10V | 4V @ 250µA | 80nC @ 20V | - | ±20V | - | 48W (Tc) | 300 mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 11A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock630,132 |
|
MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | ±16V | - | 38W (Tc) | 107 mOhm @ 8A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock738,072 |
|
MOSFET (Metal Oxide) | 50V | 16A (Tc) | 10V | 4V @ 250µA | 80nC @ 20V | 900pF @ 25V | ±20V | - | 72W (Tc) | 47 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock922,524 |
|
MOSFET (Metal Oxide) | 50V | 16A (Tc) | 4V, 5V | 2V @ 250mA | 80nC @ 10V | - | ±10V | - | 60W (Tc) | 47 mOhm @ 16A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 16A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock859,164 |
|
MOSFET (Metal Oxide) | 50V | 16A (Tc) | 10V | 4V @ 250µA | 80nC @ 20V | 900pF @ 25V | ±20V | - | 72W (Tc) | 47 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |