Page 57 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NDT453N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 8A SOT-223-4

Package: TO-261-4, TO-261AA

Stock60,000
NDC652P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 2.4A SSOT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,162,144
NDC651N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 3.2A SSOT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock585,360
NDS356P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.1A SSOT-3

Package: TO-236-3, SC-59, SOT-23-3

Stock515,232
NDS352P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 0.85A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,062,456
NDP7050L
Fairchild/ON Semiconductor

MOSFET N-CH 50V 75A TO-220AB

Package: TO-220-3

Stock7,472
NDP7050
Fairchild/ON Semiconductor

MOSFET N-CH 50V 75A TO-220AB

Package: TO-220-3

Stock7,856
NDP603AL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 25A TO-220AB

Package: TO-220-3

Stock525,456
NDP4060L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 15A TO-220

Package: TO-220-3

Stock39,240
NDP4060
Fairchild/ON Semiconductor

MOSFET N-CH 60V 15A TO-220

Package: TO-220-3

Stock19,668
NDP4050L
Fairchild/ON Semiconductor

MOSFET N-CH 50V 15A TO-220

Package: TO-220-3

Stock4,368
FCA76N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 76A TO-3PN

Package: TO-3P-3, SC-65-3

Stock83,940
FCH47N60NF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 45.8A TO-247

Package: TO-247-3

Stock4,544
FCH47N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

Package: TO-247-3

Stock105,636
FCA47N60_F109
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,248
FCA47N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-3P

Package: TO-3P-3, SC-65-3

Stock106,200
FCH099N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO247

Package: TO-247-3

Stock6,480
FCP067N65S3
Fairchild/ON Semiconductor

MOSFET N-CH 650V 44A TO220

Package: TO-220-3

Stock2,640
FCH099N65S3_F155
Fairchild/ON Semiconductor

SUPERFET3 650V,99 MOHM, TO247 PK

Package: -

Stock4,560
FCH22N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 22A TO-247

Package: TO-247-3

Stock6,432

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NDT453N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 8A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock60,000	MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	3V @ 250µA	35nC @ 10V	890pF @ 15V	±20V	-	3W (Ta)	28 mOhm @ 8A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
NDC652P	Fairchild/ON Semiconductor	MOSFET P-CH 30V 2.4A SSOT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Vgs (Max): -20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,162,144	MOSFET (Metal Oxide)	30V	2.4A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 10V	290pF @ 15V	-20V	-	1.6W (Ta)	110 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
NDC651N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 3.2A SSOT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock585,360	MOSFET (Metal Oxide)	30V	3.2A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 10V	290pF @ 15V	20V	-	1.6W (Ta)	60 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
NDS356P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 1.1A SSOT-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 210 mOhm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock515,232	MOSFET (Metal Oxide)	20V	1.1A (Ta)	4.5V, 10V	2.5V @ 250µA	5nC @ 5V	180pF @ 10V	±12V	-	500mW (Ta)	210 mOhm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
NDS352P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 0.85A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,062,456	MOSFET (Metal Oxide)	20V	850mA (Ta)	4.5V, 10V	2.5V @ 250µA	4nC @ 5V	125pF @ 10V	±12V	-	500mW (Ta)	350 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
NDP7050L	Fairchild/ON Semiconductor	MOSFET N-CH 50V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 37.5A, 5V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,472	MOSFET (Metal Oxide)	50V	75A (Tc)	5V	2V @ 250µA	115nC @ 5V	4000pF @ 25V	±20V	-	150W (Tc)	15 mOhm @ 37.5A, 5V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NDP7050	Fairchild/ON Semiconductor	MOSFET N-CH 50V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 40A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,856	MOSFET (Metal Oxide)	50V	75A (Tc)	10V	4V @ 250µA	115nC @ 10V	3600pF @ 25V	±20V	-	150W (Tc)	13 mOhm @ 40A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NDP603AL	Fairchild/ON Semiconductor	MOSFET N-CH 30V 25A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock525,456	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1100pF @ 15V	±20V	-	50W (Tc)	22 mOhm @ 25A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NDP4060L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock39,240	MOSFET (Metal Oxide)	60V	15A (Tc)	5V, 10V	2V @ 250µA	17nC @ 5V	600pF @ 25V	±16V	-	50W (Tc)	80 mOhm @ 15A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NDP4060	Fairchild/ON Semiconductor	MOSFET N-CH 60V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,668	MOSFET (Metal Oxide)	60V	15A (Tc)	10V	4V @ 250µA	17nC @ 10V	450pF @ 25V	±20V	-	50W (Tc)	100 mOhm @ 7.5A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
NDP4050L	Fairchild/ON Semiconductor	MOSFET N-CH 50V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,368	MOSFET (Metal Oxide)	50V	15A (Tc)	5V, 10V	2V @ 250µA	17nC @ 5V	600pF @ 25V	±16V	-	50W (Tc)	80 mOhm @ 15A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
FCA76N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 76A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12385pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock83,940	MOSFET (Metal Oxide)	600V	76A (Tc)	10V	4V @ 250µA	285nC @ 10V	12385pF @ 100V	±30V	-	543W (Tc)	36 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCH47N60NF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 45.8A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 368W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,544	MOSFET (Metal Oxide)	600V	45.8A (Tc)	10V	4V @ 250µA	157nC @ 10V	6120pF @ 100V	±30V	-	368W (Tc)	65 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH47N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 368W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock105,636	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 250µA	151nC @ 10V	6700pF @ 100V	±30V	-	368W (Tc)	62 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FCA47N60_F109	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,248	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	270nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	70 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCA47N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock106,200	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	270nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	70 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FCH099N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3465pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,480	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	3.5V @ 250µA	114nC @ 10V	3465pF @ 380V	±20V	-	357W (Tc)	99 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FCP067N65S3	Fairchild/ON Semiconductor	MOSFET N-CH 650V 44A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock2,640	MOSFET (Metal Oxide)	650V	44A (Tc)	10V	4.5V @ 4.4mA	78nC @ 10V	3090pF @ 400V	±30V	-	312W (Tc)	67 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCH099N65S3_F155	Fairchild/ON Semiconductor	SUPERFET3 650V,99 MOHM, TO247 PK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,560	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCH22N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 22A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,432	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 250µA	45nC @ 10V	1950pF @ 100V	±30V	-	205W (Tc)	165 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FCP22N60N_F102	Fairchild/ON Semiconductor	FCP22N60N IN TO220 F102 T/F OPTI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±45V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,760	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 250µA	45nC @ 10V	1950pF @ 100V	±45V	-	205W (Tc)	165 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQA90N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 90A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock8,052	MOSFET (Metal Oxide)	150V	90A (Tc)	10V	4V @ 250µA	285nC @ 10V	8700pF @ 25V	±25V	-	375W (Tc)	18 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FDP2D3N10C	Fairchild/ON Semiconductor	PTNG 100/20V IN TO220 3L JEDEC G FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,480	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQA13N80_F109	Fairchild/ON Semiconductor	MOSFET N-CH 800V 12.6A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,616	MOSFET (Metal Oxide)	800V	12.6A (Tc)	10V	5V @ 250µA	88nC @ 10V	3500pF @ 25V	±30V	-	300W (Tc)	750 mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
NTMFS08N2D5C	Fairchild/ON Semiconductor	PTNG 80V/20V N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB0690N1507L	Fairchild/ON Semiconductor	150V TO263 7L JEDEC GREEN EMC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,928	MOSFET (Metal Oxide)	150V	3.8A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	250W (Tc)	-	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FCP16N60N_F102	Fairchild/ON Semiconductor	FCP16N60N IN TO220 F102 T/F OPTI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 134.4W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,464	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	52.3nC @ 10V	2170pF @ 100V	±30V	-	134.4W (Tc)	199 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDPF2D3N10C	Fairchild/ON Semiconductor	PTNG N-CH 100V/120V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,056	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-