Page 61 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FCH47N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

Package: TO-247-3

Stock118,008
FDS4410
Fairchild/ON Semiconductor

MOSFET N-CH 30V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock982,152
FDP4020P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 16A TO-220AB

Package: TO-220-3

Stock186,264
FDP14AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 67A TO-220AB

Package: TO-220-3

Stock6,352
FDP120AN15A0
Fairchild/ON Semiconductor

MOSFET N-CH 150V 14A TO-220AB

Package: TO-220-3

Stock390,000
FDP10AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A TO-220AB

Package: TO-220-3

Stock104,064
FDI3652
Fairchild/ON Semiconductor

MOSFET N-CH 100V 61A TO-262AA

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,832
FDG314P
Fairchild/ON Semiconductor

MOSFET P-CH 25V 0.65A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock72,000
FDD6670AL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 84A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock93,012
FDD107AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 10.9A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,704
FDB20AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 45A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock33,036
SI9435DY
Fairchild/ON Semiconductor

MOSFET P-CH 30V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock97,488
SI9424DY
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock87,600
SI4410DY
Fairchild/ON Semiconductor

MOSFET N-CH 30V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock376,356
NDS8434A
Fairchild/ON Semiconductor

MOSFET P-CH 20V 7.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock378,480
NDS336P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.2A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock604,176
FQD17P06TF
Fairchild/ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,384
FDS6680
Fairchild/ON Semiconductor

MOSFET N-CH 30V 11.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,783,776
FDS4435A
Fairchild/ON Semiconductor

MOSFET P-CH 30V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,189,044
FDS4435
Fairchild/ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock12,631,380

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FCH47N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock118,008	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	270nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	70 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FDS4410	Fairchild/ON Semiconductor	MOSFET N-CH 30V 10A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock982,152	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	3V @ 250µA	31nC @ 10V	1340pF @ 15V	±20V	-	2.5W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDP4020P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 16A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 37.5W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 8A, 4.5V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock186,264	MOSFET (Metal Oxide)	20V	16A (Ta)	2.5V, 4.5V	1V @ 250µA	13nC @ 4.5V	665pF @ 10V	±8V	-	37.5W (Tc)	80 mOhm @ 8A, 4.5V	-65°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDP14AN06LA0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 67A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,352	MOSFET (Metal Oxide)	60V	10A (Ta), 67A (Tc)	5V, 10V	3V @ 250µA	31nC @ 5V	2900pF @ 25V	±20V	-	125W (Tc)	11.6 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDP120AN15A0	Fairchild/ON Semiconductor	MOSFET N-CH 150V 14A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	150V	2.8A (Ta), 14A (Tc)	6V, 10V	4V @ 250µA	14.5nC @ 10V	770pF @ 25V	±20V	-	65W (Tc)	120 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDP10AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock104,064	MOSFET (Metal Oxide)	60V	12A (Ta), 75A (Tc)	6V, 10V	4V @ 250µA	37nC @ 10V	1840pF @ 25V	±20V	-	135W (Tc)	10.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDI3652	Fairchild/ON Semiconductor	MOSFET N-CH 100V 61A TO-262AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 61A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262AA Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,832	MOSFET (Metal Oxide)	100V	9A (Ta), 61A (Tc)	6V, 10V	4V @ 250µA	53nC @ 10V	2880pF @ 25V	±20V	-	150W (Tc)	16 mOhm @ 61A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262AA	TO-262-3 Long Leads, I2Pak, TO-262AA
FDG314P	Fairchild/ON Semiconductor	MOSFET P-CH 25V 0.65A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock72,000	MOSFET (Metal Oxide)	25V	650mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	63pF @ 10V	±8V	-	750mW (Ta)	1.1 Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
FDD6670AL	Fairchild/ON Semiconductor	MOSFET N-CH 30V 84A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock93,012	MOSFET (Metal Oxide)	30V	84A (Ta)	4.5V, 10V	3V @ 250µA	56nC @ 5V	3845pF @ 15V	±20V	-	83W (Ta)	5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD107AN06LA0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 10.9A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 91 mOhm @ 10.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,704	MOSFET (Metal Oxide)	60V	3.4A (Ta), 10.9A (Tc)	5V, 10V	3V @ 250µA	5.5nC @ 5V	360pF @ 25V	±20V	-	25W (Tc)	91 mOhm @ 10.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDB20AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 45A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock33,036	MOSFET (Metal Oxide)	60V	9A (Ta), 45A (Tc)	10V	4V @ 250µA	19nC @ 10V	950pF @ 25V	±20V	-	90W (Tc)	20 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI9435DY	Fairchild/ON Semiconductor	MOSFET P-CH 30V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock97,488	MOSFET (Metal Oxide)	30V	5.3A (Ta)	4.5V, 10V	3V @ 250µA	23nC @ 10V	690pF @ 15V	±20V	-	2.5W (Ta)	50 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI9424DY	Fairchild/ON Semiconductor	MOSFET P-CH 20V 8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock87,600	MOSFET (Metal Oxide)	20V	8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	33nC @ 5V	2260pF @ 10V	±10V	-	2.5W (Ta)	24 mOhm @ 8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4410DY	Fairchild/ON Semiconductor	MOSFET N-CH 30V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock376,356	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	1V @ 250µA	60nC @ 10V	1350pF @ 15V	±20V	-	2.5W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NDS8434A	Fairchild/ON Semiconductor	MOSFET P-CH 20V 7.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock378,480	MOSFET (Metal Oxide)	20V	7.8A (Ta)	2.5V, 4.5V	1V @ 250µA	55nC @ 4.5V	1730pF @ 10V	±8V	-	2.5W (Ta)	24 mOhm @ 7.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NDS336P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 1.2A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock604,176	MOSFET (Metal Oxide)	20V	1.2A (Ta)	2.7V, 4.5V	1V @ 250µA	8.5nC @ 4.5V	360pF @ 10V	±8V	-	500mW (Ta)	200 mOhm @ 1.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
FQD17P06TF	Fairchild/ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,384	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	27nC @ 10V	900pF @ 25V	±25V	-	2.5W (Ta), 44W (Tc)	135 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDS6680	Fairchild/ON Semiconductor	MOSFET N-CH 30V 11.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,783,776	MOSFET (Metal Oxide)	30V	11.5A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 5V	2070pF @ 15V	±20V	-	2.5W (Ta)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS4435A	Fairchild/ON Semiconductor	MOSFET P-CH 30V 9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,189,044	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	2V @ 250µA	30nC @ 5V	2010pF @ 15V	±20V	-	2.5W (Ta)	17 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS4435	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1604pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock12,631,380	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 5V	1604pF @ 15V	±25V	-	2.5W (Ta)	20 mOhm @ 8.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDR4420A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 11A SSOT-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-8 Package / Case: 8-SMD, Gull Wing	Package: 8-SMD, Gull Wing	Stock73,800	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	33nC @ 5V	2560pF @ 15V	±20V	-	1.8W (Ta)	9 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-8	8-SMD, Gull Wing
FDC633N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 5.2A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,099,008	MOSFET (Metal Oxide)	30V	5.2A (Ta)	2.5V, 4.5V	1V @ 250µA	16nC @ 4.5V	538pF @ 10V	±8V	-	1.6W (Ta)	42 mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FDB7030L	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 40A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock576,660	MOSFET (Metal Oxide)	30V	80A (Ta)	4.5V, 10V	3V @ 250µA	33nC @ 5V	2440pF @ 15V	±20V	-	68W (Tc)	7 mOhm @ 40A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP9N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock37,944	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	5V @ 250µA	36nC @ 10V	1450pF @ 25V	±30V	-	147W (Tc)	730 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQA24N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 24A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,888	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	5V @ 250µA	120nC @ 10V	4500pF @ 25V	±30V	-	290W (Tc)	200 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
BUZ11_R4941	Fairchild/ON Semiconductor	MOSFET N-CH 50V 30A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,376	MOSFET (Metal Oxide)	50V	30A (Tc)	10V	4V @ 1mA	-	2000pF @ 25V	±20V	-	75W (Tc)	40 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDS7288N3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock42,264	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	3V @ 250µA	69nC @ 10V	3300pF @ 15V	±20V	-	3W (Ta)	4.5 mOhm @ 20.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS7096N3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1587pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,691,996	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 5V	1587pF @ 15V	±20V	-	3W (Ta)	9 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)