Page 63 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

BSS138_L99Z
Fairchild/ON Semiconductor

MOSFET N-CH 50V 220MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,024
2N7002_L99Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,032
FDG329N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 1.5A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock36,000
FDU8880
Fairchild/ON Semiconductor

MOSFET N-CH 30V 58A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock393,456
FDD044AN03L
Fairchild/ON Semiconductor

MOSFET N-CH 30V 35A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,228
FDB6030BL
Fairchild/ON Semiconductor

MOSFET N-CH 30V 40A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock64,272
FDB6021P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 28A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock38,604
FDB5645
Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,048
FDB4020P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 16A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,528
FDB2670
Fairchild/ON Semiconductor

MOSFET N-CH 200V 19A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,520
FDB2570
Fairchild/ON Semiconductor

MOSFET N-CH 150V 22A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock393,384
BS170_L34Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,280
FDP5645
Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A TO-220

Package: TO-220-3

Stock103,464
FDP2670
Fairchild/ON Semiconductor

MOSFET N-CH 200V 19A TO-220AB

Package: TO-220-3

Stock3,696
FDI2532
Fairchild/ON Semiconductor

MOSFET N-CH 150V 79A TO-262AB

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock190,296
FDS6672A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock510,408
FDP2570
Fairchild/ON Semiconductor

MOSFET N-CH 150V 22A TO-220AB

Package: TO-220-3

Stock103,464
FDI047AN08A0
Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-262AB

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,408
FDU8882
Fairchild/ON Semiconductor

MOSFET N-CH 30V 55A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,784
FDU8878
Fairchild/ON Semiconductor

MOSFET N-CH 30V 40A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock15,312

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS138_L99Z	Fairchild/ON Semiconductor	MOSFET N-CH 50V 220MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,024	MOSFET (Metal Oxide)	50V	220mA (Ta)	4.5V, 10V	1.5V @ 1mA	2.4nC @ 10V	27pF @ 25V	±20V	-	360mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2N7002_L99Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 115MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,032	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23 (TO-236AB)	TO-236-3, SC-59, SOT-23-3
FDG329N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 1.5A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock36,000	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	4.6nC @ 4.5V	324pF @ 10V	±12V	-	420mW (Ta)	90 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
FDU8880	Fairchild/ON Semiconductor	MOSFET N-CH 30V 58A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock393,456	MOSFET (Metal Oxide)	30V	13A (Ta), 58A (Tc)	4.5V, 10V	2.5V @ 250µA	31nC @ 10V	1260pF @ 15V	±20V	-	55W (Tc)	10 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
FDD044AN03L	Fairchild/ON Semiconductor	MOSFET N-CH 30V 35A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,228	MOSFET (Metal Oxide)	30V	21A (Ta), 35A (Tc)	4.5V, 10V	2.5V @ 250µA	118nC @ 10V	5160pF @ 15V	±20V	-	160W (Tc)	3.9 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDB6030BL	Fairchild/ON Semiconductor	MOSFET N-CH 30V 40A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock64,272	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 5V	1160pF @ 15V	±20V	-	60W (Tc)	18 mOhm @ 20A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6021P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 28A TO-263AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 14A, 4.5V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock38,604	MOSFET (Metal Oxide)	20V	28A (Ta)	1.8V, 4.5V	1.5V @ 250µA	28nC @ 4.5V	1890pF @ 10V	±8V	-	37W (Tc)	30 mOhm @ 14A, 4.5V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB5645	Fairchild/ON Semiconductor	MOSFET N-CH 60V 80A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4468pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 40A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,048	MOSFET (Metal Oxide)	60V	80A (Ta)	6V, 10V	4V @ 250µA	107nC @ 10V	4468pF @ 30V	±20V	-	125W (Tc)	9.5 mOhm @ 40A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB4020P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 16A TO-263AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 37.5W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 8A, 4.5V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,528	MOSFET (Metal Oxide)	20V	16A (Ta)	2.5V, 4.5V	1V @ 250µA	13nC @ 4.5V	665pF @ 10V	±8V	-	37.5W (Tc)	80 mOhm @ 8A, 4.5V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2670	Fairchild/ON Semiconductor	MOSFET N-CH 200V 19A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,520	MOSFET (Metal Oxide)	200V	19A (Ta)	10V	4.5V @ 250µA	38nC @ 10V	1320pF @ 100V	±20V	-	93W (Tc)	130 mOhm @ 10A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2570	Fairchild/ON Semiconductor	MOSFET N-CH 150V 22A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1911pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 11A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock393,384	MOSFET (Metal Oxide)	150V	22A (Ta)	6V, 10V	4V @ 250µA	56nC @ 10V	1911pF @ 75V	±20V	-	93W (Tc)	80 mOhm @ 11A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BS170_L34Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,280	MOSFET (Metal Oxide)	60V	500mA (Ta)	-	3V @ 1mA	-	40pF @ 10V	-	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FDP5645	Fairchild/ON Semiconductor	MOSFET N-CH 60V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4468pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 40A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	60V	80A (Ta)	6V, 10V	4V @ 250µA	107nC @ 10V	4468pF @ 30V	±20V	-	125W (Tc)	9.5 mOhm @ 40A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDP2670	Fairchild/ON Semiconductor	MOSFET N-CH 200V 19A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,696	MOSFET (Metal Oxide)	200V	19A (Ta)	10V	4.5V @ 250µA	38nC @ 10V	1320pF @ 100V	±20V	-	93W (Tc)	130 mOhm @ 10A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDI2532	Fairchild/ON Semiconductor	MOSFET N-CH 150V 79A TO-262AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock190,296	MOSFET (Metal Oxide)	150V	8A (Ta), 79A (Tc)	6V, 10V	4V @ 250µA	107nC @ 10V	5870pF @ 25V	±20V	-	310W (Tc)	16 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
FDS6672A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock510,408	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	2V @ 250µA	46nC @ 4.5V	5070pF @ 15V	±12V	-	2.5W (Ta)	8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDP2570	Fairchild/ON Semiconductor	MOSFET N-CH 150V 22A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1911pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 11A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	150V	22A (Ta)	6V, 10V	4V @ 250µA	56nC @ 10V	1911pF @ 75V	±20V	-	93W (Tc)	80 mOhm @ 11A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDI047AN08A0	Fairchild/ON Semiconductor	MOSFET N-CH 75V 80A TO-262AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,408	MOSFET (Metal Oxide)	75V	80A (Tc)	6V, 10V	4V @ 250µA	138nC @ 10V	6600pF @ 25V	±20V	-	310W (Tc)	4.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
FDU8882	Fairchild/ON Semiconductor	MOSFET N-CH 30V 55A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,784	MOSFET (Metal Oxide)	30V	12.6A (Ta), 55A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 10V	1260pF @ 15V	±20V	-	55W (Tc)	11.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
FDU8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 40A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock15,312	MOSFET (Metal Oxide)	30V	11A (Ta), 40A (Tc)	4.5V, 10V	2.5V @ 250µA	26nC @ 10V	880pF @ 15V	±20V	-	40W (Tc)	15 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
FDU8874	Fairchild/ON Semiconductor	MOSFET N-CH 30V 116A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,264	MOSFET (Metal Oxide)	30V	18A (Ta), 116A (Tc)	4.5V, 10V	2.5V @ 250µA	72nC @ 10V	2990pF @ 15V	±20V	-	110W (Tc)	5.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
FDU6688	Fairchild/ON Semiconductor	MOSFET N-CH 30V 84A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock16,620	MOSFET (Metal Oxide)	30V	84A (Ta)	4.5V, 10V	3V @ 250µA	56nC @ 5V	3845pF @ 15V	±20V	-	83W (Ta)	5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDU6612A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9.5A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock176,976	MOSFET (Metal Oxide)	30V	9.5A (Ta), 30A (Tc)	4.5V, 10V	3V @ 250µA	9.4nC @ 5V	660pF @ 15V	±20V	-	2.8W (Ta), 36W (Tc)	20 mOhm @ 9.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDU6512A	Fairchild/ON Semiconductor	MOSFET N-CH 20V 10.7A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.7A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,768	MOSFET (Metal Oxide)	20V	10.7A (Ta), 36A (Tc)	2.5V, 4.5V	1.5V @ 250µA	19nC @ 4.5V	1082pF @ 10V	±12V	-	3.8W (Ta), 43W (Tc)	21 mOhm @ 10.7A, 4.5V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDU2572	Fairchild/ON Semiconductor	MOSFET N-CH 150V 29A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock74,388	MOSFET (Metal Oxide)	150V	4A (Ta), 29A (Tc)	6V, 10V	4V @ 250µA	34nC @ 10V	1770pF @ 25V	±20V	-	135W (Tc)	54 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
FDS9412	Fairchild/ON Semiconductor	MOSFET N-CH 30V 7.9A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,035,396	MOSFET (Metal Oxide)	30V	7.9A (Ta)	4.5V, 10V	2V @ 250µA	22nC @ 10V	830pF @ 15V	±20V	-	2.5W (Ta)	22 mOhm @ 7.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS6689S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 16A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,620	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	3V @ 1mA	78nC @ 10V	3290pF @ 15V	±20V	-	2.5W (Ta)	5.4 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS6614A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9.3A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock320,868	MOSFET (Metal Oxide)	30V	9.3A (Ta)	4.5V, 10V	3V @ 250µA	17nC @ 5V	1160pF @ 15V	±20V	-	2.5W (Ta)	18 mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)