Page 89 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

HUFA75337P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock60,228
HUFA76437P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 71A TO-220AB

Package: TO-220-3

Stock5,440
FQA9N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9.6A TO-3P

Package: TO-3P-3, SC-65-3

Stock103,824
FQAF9N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 7.2A TO-3P

Package: SC-94

Stock8,172
FQI9N50TU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,472
FQP5N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 5.4A TO-220

Package: TO-220-3

Stock138,972
HUFA75332S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,972
FQAF11N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 8.8A TO-3PF

Package: SC-94

Stock4,912
HUF75631SK8T
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.5A 8-SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock181,164
HUF76633S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,704
FQP7N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.4A TO-220

Package: TO-220-3

Stock4,272
FQAF14N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 11.4A TO-3PF

Package: SC-94

Stock8,460
FQPF6N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 3.3A TO-220F

Package: TO-220-3 Full Pack

Stock6,144
FQB5N80TM
Fairchild/ON Semiconductor

MOSFET N-CH 800V 4.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,704
HUF75337S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,408
FQB9N50TM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock37,152
HUFA76633P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 38A TO-220AB

Package: TO-220-3

Stock6,896
FQA44N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 48A TO-3P

Package: TO-3P-3, SC-65-3

Stock110,844
FQAF44N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 33A TO-3PF

Package: SC-94

Stock10,176
FQAF16N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 12.4A TO-3PF

Package: SC-94

Stock3,472

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
HUFA75337P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1775pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,228	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	109nC @ 20V	1775pF @ 25V	±20V	-	175W (Tc)	14 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA76437P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 71A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,440	MOSFET (Metal Oxide)	60V	71A (Tc)	4.5V, 10V	3V @ 250µA	71nC @ 10V	2230pF @ 25V	±16V	-	155W (Tc)	14 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQA9N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9.6A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,824	MOSFET (Metal Oxide)	500V	9.6A (Tc)	10V	5V @ 250µA	36nC @ 10V	1450pF @ 25V	±30V	-	160W (Tc)	730 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQAF9N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 7.2A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock8,172	MOSFET (Metal Oxide)	500V	7.2A (Tc)	10V	5V @ 250µA	36nC @ 10V	1450pF @ 25V	±30V	-	90W (Tc)	730 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQI9N50TU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,472	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	5V @ 250µA	36nC @ 10V	1450pF @ 25V	±30V	-	3.13W (Ta), 147W (Tc)	730 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
FQP5N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 5.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock138,972	MOSFET (Metal Oxide)	900V	5.4A (Tc)	10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	±30V	-	158W (Tc)	2.3 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
HUFA75332S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,972	MOSFET (Metal Oxide)	55V	60A (Tc)	10V	4V @ 250µA	85nC @ 20V	1300pF @ 25V	±20V	-	145W (Tc)	19 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQAF11N40	Fairchild/ON Semiconductor	MOSFET N-CH 400V 8.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock4,912	MOSFET (Metal Oxide)	400V	8.8A (Tc)	10V	5V @ 250µA	35nC @ 10V	1400pF @ 25V	±30V	-	90W (Tc)	480 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
HUF75631SK8T	Fairchild/ON Semiconductor	MOSFET N-CH 100V 5.5A 8-SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock181,164	MOSFET (Metal Oxide)	100V	5.5A (Ta)	10V	4V @ 250µA	79nC @ 20V	1225pF @ 25V	±20V	-	2.5W (Ta)	39 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
HUF76633S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,704	MOSFET (Metal Oxide)	100V	39A (Tc)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1820pF @ 25V	±16V	-	145W (Tc)	35 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP7N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,272	MOSFET (Metal Oxide)	600V	7.4A (Tc)	10V	5V @ 250µA	38nC @ 10V	1430pF @ 25V	±30V	-	142W (Tc)	1 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQAF14N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 11.4A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock8,460	MOSFET (Metal Oxide)	300V	11.4A (Tc)	10V	5V @ 250µA	40nC @ 10V	1360pF @ 25V	±30V	-	90W (Tc)	290 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQPF6N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3.3A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 1.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,144	MOSFET (Metal Oxide)	800V	3.3A (Tc)	10V	5V @ 250µA	31nC @ 10V	1500pF @ 25V	±30V	-	51W (Tc)	1.95 Ohm @ 1.65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB5N80TM	Fairchild/ON Semiconductor	MOSFET N-CH 800V 4.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,704	MOSFET (Metal Oxide)	800V	4.8A (Tc)	10V	5V @ 250µA	33nC @ 10V	1250pF @ 25V	±30V	-	3.13W (Ta), 140W (Tc)	2.6 Ohm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75337S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1775pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,408	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	109nC @ 20V	1775pF @ 25V	±20V	-	175W (Tc)	14 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB9N50TM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock37,152	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	5V @ 250µA	36nC @ 10V	1450pF @ 25V	±30V	-	3.13W (Ta), 147W (Tc)	730 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76633P3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,896	MOSFET (Metal Oxide)	100V	39A (Tc)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1820pF @ 25V	±16V	-	145W (Tc)	35 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQA44N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 48A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock110,844	MOSFET (Metal Oxide)	100V	48A (Tc)	10V	4V @ 250µA	62nC @ 10V	1800pF @ 25V	±25V	-	180W (Tc)	39 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQAF44N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 33A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock10,176	MOSFET (Metal Oxide)	100V	33A (Tc)	10V	4V @ 250µA	62nC @ 10V	1800pF @ 25V	±25V	-	85W (Tc)	39 mOhm @ 16.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
FQAF16N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 12.4A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock3,472	MOSFET (Metal Oxide)	250V	12.4A (Tc)	10V	5V @ 250µA	35nC @ 10V	1200pF @ 25V	±30V	-	85W (Tc)	230 mOhm @ 6.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQPF12N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 12A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,856	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	63nC @ 10V	2290pF @ 25V	±30V	-	51W (Tc)	650 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUFA76432S3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 59A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 59A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,984	MOSFET (Metal Oxide)	60V	59A (Tc)	4.5V, 10V	3V @ 250µA	53nC @ 10V	1765pF @ 25V	±16V	-	130W (Tc)	17 mOhm @ 59A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA75333P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 66A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,720	MOSFET (Metal Oxide)	55V	66A (Tc)	10V	4V @ 250µA	85nC @ 20V	1300pF @ 25V	±20V	-	150W (Tc)	16 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQA44N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 49.8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 49.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464	MOSFET (Metal Oxide)	80V	49.8A (Tc)	10V	4V @ 250µA	50nC @ 10V	1430pF @ 25V	±25V	-	163W (Tc)	34 mOhm @ 24.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQB13N50CTM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,312	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	56nC @ 10V	2055pF @ 25V	±30V	-	195W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF76633S3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,664	MOSFET (Metal Oxide)	100V	39A (Tc)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1820pF @ 25V	±16V	-	145W (Tc)	35 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP6N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 5.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock60,000	MOSFET (Metal Oxide)	800V	5.8A (Tc)	10V	5V @ 250µA	31nC @ 10V	1500pF @ 25V	±30V	-	158W (Tc)	1.95 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQB10N60CTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 9.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,680	MOSFET (Metal Oxide)	600V	9.5A (Tc)	10V	4V @ 250µA	57nC @ 10V	2040pF @ 25V	±30V	-	3.13W (Ta), 156W (Tc)	730 mOhm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB