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Infineon Technologies |
IGBT 1200V 75A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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1200 V | - | 225 A | 2.42V @ 15V, 75A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 1200V 75A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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1200 V | - | 225 A | 2.07V @ 15V, 75A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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600 V | 40 A | 120 A | 1.97V @ 15V, 40A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 1200V 4A SAWN ON FOIL
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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1200 V | - | 12 A | 2.02V @ 15V, 4A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 57ns/380ns
- Test Condition: 400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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600 V | 50 A | 150 A | 2.5V @ 15V, 50A | - | - | Standard | - | 57ns/380ns | 400V, 50A, 6.8Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 57ns/380ns
- Test Condition: 400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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600 V | 50 A | 150 A | 2.5V @ 15V, 50A | - | - | Standard | - | 57ns/380ns | 400V, 50A, 6.8Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT, 31A I(C), 600V V(BR)CES, N
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 31 A
- Current - Collector Pulsed (Icm): 62 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 208 W
- Switching Energy: 220µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 34ns/184ns
- Test Condition: 400V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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600 V | 31 A | 62 A | 2.2V @ 15V, 15A | 208 W | 220µJ (on), 340µJ (off) | Standard | 84 nC | 34ns/184ns | 400V, 15A, 22Ohm, 15V | 92 ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Infineon Technologies |
IGBT TRENCH FS 600V 40A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
- Power - Max: 130 W
- Switching Energy: 1.28mJ (on), 560µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 21ns/174ns
- Test Condition: 400V, 40A, 8Ohm, 15V
- Reverse Recovery Time (trr): 64 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-AI
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Package: - |
Stock465 |
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600 V | 40 A | 120 A | 2.7V @ 15V, 40A | 130 W | 1.28mJ (on), 560µJ (off) | Standard | 160 nC | 21ns/174ns | 400V, 40A, 8Ohm, 15V | 64 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-AI |
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Infineon Technologies |
IGBT TRENCH FS 650V 85A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
- Power - Max: 205 W
- Switching Energy: 1.5mJ (on), 730µJ (off)
- Input Type: Standard
- Gate Charge: 144 nC
- Td (on/off) @ 25°C: 40ns/351ns
- Test Condition: 400V, 50A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-32
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Package: - |
Stock1,434 |
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650 V | 85 A | 150 A | 1.85V @ 15V, 50A | 205 W | 1.5mJ (on), 730µJ (off) | Standard | 144 nC | 40ns/351ns | 400V, 50A, 22Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-32 |
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Infineon Technologies |
IGBT TRENCH FS 650V 15A TO252-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 25 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
- Power - Max: 47 W
- Switching Energy: 110µJ (on), 40µJ (off)
- Input Type: Standard
- Gate Charge: 17 nC
- Td (on/off) @ 25°C: 20ns/59ns
- Test Condition: 400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 43 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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Package: - |
Stock8,982 |
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650 V | 15 A | 25 A | 1.9V @ 15V, 5A | 47 W | 110µJ (on), 40µJ (off) | Standard | 17 nC | 20ns/59ns | 400V, 5A, 47Ohm, 15V | 43 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | PG-TO252-3 |
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Infineon Technologies |
FD1200R12IE4B1S1BD - IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 36ns/250ns
- Test Condition: 400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 36ns/250ns | 400V, 20A, 16Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 36ns/250ns
- Test Condition: 400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 36ns/250ns | 400V, 20A, 16Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 36ns/250ns
- Test Condition: 400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | 60 A | 2.5V @ 15V, 20A | - | - | Standard | - | 36ns/250ns | 400V, 20A, 16Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT 1200V 15A SAWN ON FOIL
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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1200 V | - | 45 A | 2.07V @ 15V, 15A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 600V 100A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333 W
- Switching Energy: 2.6mJ
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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Package: - |
Stock777 |
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600 V | 100 A | 150 A | 2V @ 15V, 50A | 333 W | 2.6mJ | Standard | 310 nC | 26ns/299ns | 400V, 50A, 7Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-1 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 450 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 125ns/225ns
- Test Condition: 300V, 150A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 150 A | 450 A | 2.5V @ 15V, 150A | - | - | Standard | - | 125ns/225ns | 300V, 150A, 1.5Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 600V 7.5A SOT223-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 7.5 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
- Power - Max: 6.8 W
- Switching Energy: 95µJ (on), 62µJ (off)
- Input Type: Standard
- Gate Charge: 24 nC
- Td (on/off) @ 25°C: 8ns/126ns
- Test Condition: 400V, 4A, 49Ohm, 15V
- Reverse Recovery Time (trr): 39 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-3
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Package: - |
Stock8,592 |
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600 V | 7.5 A | 12 A | 2.3V @ 15V, 4A | 6.8 W | 95µJ (on), 62µJ (off) | Standard | 24 nC | 8ns/126ns | 400V, 4A, 49Ohm, 15V | 39 ns | -40°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-3 |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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1200 V | 100 A | 300 A | 2.42V @ 15V, 100A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
HOME APPLIANCES 14 PG-HSIP247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 53 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
- Power - Max: 106 W
- Switching Energy: 1.17mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 18ns/105ns
- Test Condition: 400V, 40A, 14Ohm, 15V
- Reverse Recovery Time (trr): 64 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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Package: - |
Request a Quote |
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650 V | 53 A | 120 A | 2.25V @ 15V, 40A | 106 W | 1.17mJ (on), 500µJ (off) | Standard | 70 nC | 18ns/105ns | 400V, 40A, 14Ohm, 15V | 64 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-HSIP247-3-2 |
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Infineon Technologies |
IGBT TRENCH FS 650V 80A TO247-4
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
- Power - Max: 210 W
- Switching Energy: 0.37mJ (on), 0.36mJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 13ns/134ns
- Test Condition: 400V, 40A, 12.5Ohm, 15V
- Reverse Recovery Time (trr): 49.6 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-3
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Package: - |
Stock720 |
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650 V | 80 A | 160 A | 1.65V @ 15V, 40A | 210 W | 0.37mJ (on), 0.36mJ (off) | Standard | 81 nC | 13ns/134ns | 400V, 40A, 12.5Ohm, 15V | 49.6 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4-3 |
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Infineon Technologies |
TRENCH >=100V
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH FS 600V 40A TO220-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
- Power - Max: 166 W
- Switching Energy: 770µJ
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 18ns/199ns
- Test Condition: 400V, 20A, 12Ohm, 15V
- Reverse Recovery Time (trr): 41 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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Package: - |
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600 V | 40 A | 60 A | 2.05V @ 15V, 20A | 166 W | 770µJ | Standard | 120 nC | 18ns/199ns | 400V, 20A, 12Ohm, 15V | 41 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 |
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Infineon Technologies |
IGBT TRENCH FS 650V 80A TO247-4
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
- Power - Max: 338 W
- Switching Energy: 0.75mJ (on), 0.84mJ (off)
- Input Type: Standard
- Gate Charge: 152 nC
- Td (on/off) @ 25°C: 26ns/199ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 56 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-3
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Package: - |
Stock642 |
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650 V | 80 A | 300 A | 1.65V @ 15V, 75A | 338 W | 0.75mJ (on), 0.84mJ (off) | Standard | 152 nC | 26ns/199ns | 400V, 75A, 10Ohm, 15V | 56 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4-3 |
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Infineon Technologies |
IGBT TRENCH FS 650V 55A TO263-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 870µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 24ns/159ns
- Test Condition: 400V, 30A, 22Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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Package: - |
Stock14,790 |
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650 V | 55 A | 90 A | 2.1V @ 15V, 30A | 188 W | 870µJ (on), 300µJ (off) | Standard | 70 nC | 24ns/159ns | 400V, 30A, 22Ohm, 15V | 75 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3 |
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Infineon Technologies |
IGBT 1200V 50A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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1200 V | - | 150 A | 2.07V @ 15V, 50A | - | - | Standard | - | - | - | - | - | - | - | - |
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