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Infineon Technologies |
IGBT 1200V 100A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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1200 V | - | 300 A | 1.97V @ 15V, 100A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 21ns/110ns | 300V, 10A, 27Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 21ns/110ns | 300V, 10A, 27Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 1200V 166A TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 166 A
- Current - Collector Pulsed (Icm): 400 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
- Power - Max: 721 W
- Switching Energy: 6.7mJ (on), 2.52mJ (off)
- Input Type: Standard
- Gate Charge: 696 nC
- Td (on/off) @ 25°C: 66ns/547ns
- Test Condition: -
- Reverse Recovery Time (trr): 148 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-U01
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Package: - |
Stock600 |
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1200 V | 166 A | 400 A | 2.15V @ 15V, 100A | 721 W | 6.7mJ (on), 2.52mJ (off) | Standard | 696 nC | 66ns/547ns | - | 148 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-U01 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 29ns/266ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 29ns/266ns | 400V, 10A, 25Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 29ns/266ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 29ns/266ns | 400V, 10A, 25Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT NPT 650V 40A TO263-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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Package: - |
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650 V | 40 A | - | - | - | - | Standard | - | - | - | - | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3-2 |
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Infineon Technologies |
IGBT TRENCH 1200V 100A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 9.5mJ
- Input Type: Standard
- Gate Charge: 280 nC
- Td (on/off) @ 25°C: 50ns/480ns
- Test Condition: 600V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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Package: - |
Stock24 |
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1200 V | 100 A | 150 A | 2.4V @ 15V, 60A | 375 W | 9.5mJ | Standard | 280 nC | 50ns/480ns | 600V, 60A, 10Ohm, 15V | - | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-1 |
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Infineon Technologies |
IGBT TRENCH FS 1200V 216A TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 216 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
- Power - Max: 1004 W
- Switching Energy: 10.3mJ (on), 5.72mJ (off)
- Input Type: Standard
- Gate Charge: 710 nC
- Td (on/off) @ 25°C: 44ns/205ns
- Test Condition: -
- Reverse Recovery Time (trr): 205 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-46
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Package: - |
Stock564 |
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1200 V | 216 A | 360 A | 2V @ 15V, 120A | 1004 W | 10.3mJ (on), 5.72mJ (off) | Standard | 710 nC | 44ns/205ns | - | 205 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-46 |
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Infineon Technologies |
IGBT 1400V 80A TO247-44
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1400 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
- Power - Max: 306 W
- Switching Energy: -, 140µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: -/175ns
- Test Condition: 25V, 30A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-44
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Package: - |
Stock669 |
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1400 V | 80 A | 90 A | 1.95V @ 15V, 30A | 306 W | -, 140µJ (off) | Standard | 210 nC | -/175ns | 25V, 30A, 2.2Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-44 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 65ns/450ns
- Test Condition: 400V, 100A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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600 V | 100 A | 300 A | 2.5V @ 15V, 100A | - | - | Standard | - | 65ns/450ns | 400V, 100A, 3.3Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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1200 V | 50 A | - | 3.5V @ 15V, 50A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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650 V | 100 A | 300 A | 2.22V @ 15V, 100A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 600V 11.7A TO252
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11.7 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
- Power - Max: 51.7 W
- Switching Energy: 170µJ (on), 80µJ (off)
- Input Type: Standard
- Gate Charge: 31 nC
- Td (on/off) @ 25°C: 6ns/129ns
- Test Condition: 400V, 6A, 49Ohm, 15V
- Reverse Recovery Time (trr): 98 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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Package: - |
Stock13,752 |
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600 V | 11.7 A | 18 A | 2.3V @ 15V, 6A | 51.7 W | 170µJ (on), 80µJ (off) | Standard | 31 nC | 6ns/129ns | 400V, 6A, 49Ohm, 15V | 98 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | PG-TO252-3 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 31ns/261ns
- Test Condition: 400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 31ns/261ns | 400V, 15A, 21Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 31ns/261ns
- Test Condition: 400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 31ns/261ns | 400V, 15A, 21Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 31ns/261ns
- Test Condition: 400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 31ns/261ns | 400V, 15A, 21Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 31ns/261ns
- Test Condition: 400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 31ns/261ns | 400V, 15A, 21Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 31ns/261ns
- Test Condition: 400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 31ns/261ns | 400V, 15A, 21Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 130 ns
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | - | - | - | - | Standard | - | - | - | 130 ns | -55°C ~ 150°C | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 3A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | - | 1.35V @ 15V, 3A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
TRENCH 40<-<100V
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IGBT 600V TO-247 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IGBT TRENCH FS 650V 67A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 67 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
- Power - Max: 136 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 97 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-32
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Package: - |
Stock600 |
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650 V | 67 A | 90 A | 1.75V @ 15V, 30A | 136 W | - | Standard | 97 nC | - | - | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-32 |
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Infineon Technologies |
LOW POWER EASY
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,000 |
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Infineon Technologies |
DISCRETE SWITCHES
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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Package: - |
Request a Quote |
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650 V | 30 A | - | - | - | - | Standard | - | - | - | - | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3-2 |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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1200 V | 75 A | - | 3.5V @ 15V, 75A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |