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Infineon Technologies |
SIC_DISCRETE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 310µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 109 nC
- Td (on/off) @ 25°C: 20ns/156ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: - |
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650 V | 80 A | 150 A | 2.1V @ 15V, 50A | 250 W | 310µJ (on), 120µJ (off) | Standard | 109 nC | 20ns/156ns | 400V, 25A, 12Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT TRENCH FS 650V 15A TO220-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 42.5 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
- Power - Max: 40 W
- Switching Energy: 200µJ (on), 70µJ (off)
- Input Type: Standard
- Gate Charge: 27 nC
- Td (on/off) @ 25°C: 30ns/106ns
- Test Condition: 400V, 8.5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 51 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-3-FP
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Package: - |
Stock1,500 |
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650 V | 15 A | 42.5 A | 1.9V @ 15V, 8.5A | 40 W | 200µJ (on), 70µJ (off) | Standard | 27 nC | 30ns/106ns | 400V, 8.5A, 47Ohm, 15V | 51 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3-FP |
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Infineon Technologies |
IGBT TRENCH 600V 80A TO247-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 305 W
- Switching Energy: 560µJ (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: -/175ns
- Test Condition: 400V, 40A, 5.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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Package: - |
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600 V | 80 A | 120 A | 2.4V @ 15V, 40A | 305 W | 560µJ (off) | Standard | 220 nC | -/175ns | 400V, 40A, 5.6Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-1 |
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Infineon Technologies |
IGBT 1200V 100A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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1200 V | - | 300 A | 2.1V @ 15V, 100A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 1200V 188A TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 188 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
- Power - Max: 824 W
- Switching Energy: 6.87mJ (on), 4.71mJ (off)
- Input Type: Standard
- Gate Charge: 610 nC
- Td (on/off) @ 25°C: 38ns/200ns
- Test Condition: -
- Reverse Recovery Time (trr): 203 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-55
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Package: - |
Stock705 |
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1200 V | 188 A | 300 A | 2V @ 15V, 100A | 824 W | 6.87mJ (on), 4.71mJ (off) | Standard | 610 nC | 38ns/200ns | - | 203 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-55 |
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Infineon Technologies |
IGBT 600V 6A WAFER
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IGBT PDP 330V 40A D2PAK
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 330 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A
- Power - Max: 78 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 1ns/65ns
- Test Condition: 196V, 12A, 10Ohm
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: - |
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330 V | 40 A | - | 2.14V @ 15V, 60A | 78 W | - | Standard | 33 nC | 1ns/65ns | 196V, 12A, 10Ohm | - | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 450 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 125ns/225ns
- Test Condition: 300V, 150A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 150 A | 450 A | 2.5V @ 15V, 150A | - | - | Standard | - | 125ns/225ns | 300V, 150A, 1.5Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 450 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 125ns/225ns
- Test Condition: 300V, 150A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 150 A | 450 A | 2.5V @ 15V, 150A | - | - | Standard | - | 125ns/225ns | 300V, 150A, 1.5Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 75 A | - | 2.9V @ 15V, 75A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 75 A | - | 2.1V @ 15V, 75A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 48ns/350ns
- Test Condition: 400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 50 A | 150 A | 3.15V @ 15V, 50A | - | - | Standard | - | 48ns/350ns | 400V, 50A, 6.8Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 48ns/350ns
- Test Condition: 400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 50 A | 150 A | 3.15V @ 15V, 50A | - | - | Standard | - | 48ns/350ns | 400V, 50A, 6.8Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 650V 38A TO263-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 125 W
- Switching Energy: 560µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 19ns/160ns
- Test Condition: 400V, 20A, 32Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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Package: - |
Stock2,550 |
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650 V | 38 A | 60 A | 2.1V @ 15V, 20A | 125 W | 560µJ (on), 130µJ (off) | Standard | 48 nC | 19ns/160ns | 400V, 20A, 32Ohm, 15V | 80 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3 |
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Infineon Technologies |
IGBT TRENCH FS 1200V 75A TO247-4
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Power - Max: 398 W
- Switching Energy: 1.09mJ (on), 1.33mJ (off)
- Input Type: Standard
- Gate Charge: 372 nC
- Td (on/off) @ 25°C: 35ns/331ns
- Test Condition: -
- Reverse Recovery Time (trr): 86 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-U10
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Package: - |
Stock609 |
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1200 V | 75 A | 200 A | 2.15V @ 15V, 50A | 398 W | 1.09mJ (on), 1.33mJ (off) | Standard | 372 nC | 35ns/331ns | - | 86 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4-U10 |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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1200 V | 75 A | 225 A | 2.42V @ 15V, 75A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 650V 80A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
- Power - Max: 208 W
- Switching Energy: 0.97mJ (on), 0.42mJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 18ns/141ns
- Test Condition: 400V, 40A, 12.5Ohm, 15V
- Reverse Recovery Time (trr): 74 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-32
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Package: - |
Stock627 |
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650 V | 80 A | 160 A | 1.65V @ 15V, 40A | 208 W | 0.97mJ (on), 0.42mJ (off) | Standard | 81 nC | 18ns/141ns | 400V, 40A, 12.5Ohm, 15V | 74 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-32 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 6A, 54Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 6 A | 18 A | 2.5V @ 15V, 6A | - | - | Standard | - | 21ns/110ns | 300V, 6A, 54Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 21ns/110ns | 300V, 15A, 18Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 21ns/110ns | 300V, 15A, 18Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 21ns/110ns | 300V, 15A, 18Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 21ns/110ns | 300V, 15A, 18Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | - | Standard | - | 21ns/110ns | 300V, 15A, 18Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 650V 80A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
- Power - Max: 341 W
- Switching Energy: 2.42mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: 25ns/45ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 89 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-32
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Package: - |
Stock642 |
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650 V | 80 A | 300 A | 1.65V @ 15V, 75A | 341 W | 2.42mJ (on), 1.4mJ (off) | Standard | 150 nC | 25ns/45ns | 400V, 75A, 10Ohm, 15V | 89 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-32 |
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Infineon Technologies |
AUTOMOTIVE_SICMOS
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Infineon Technologies |
DISCRETE SWITCHES
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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650 V | 40 A | - | - | - | - | Standard | - | - | - | - | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3-2 |
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Infineon Technologies |
IGBT 1200V 75A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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1200 V | - | 225 A | 2.1V @ 15V, 75A | - | - | Standard | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IGBT 1600V 60A 312W TO247-3
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 312 W
- Switching Energy: 4.37mJ
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: -/525ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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Package: - |
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1600 V | 60 A | 90 A | 2.1V @ 15V, 30A | 312 W | 4.37mJ | Standard | 94 nC | -/525ns | 600V, 30A, 10Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-1 |
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