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Infineon Technologies |
IGBT 650V 75A FAST DIODE TO247-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
- Power - Max: 536W
- Switching Energy: 1.61mJ (on), 3.2mJ (off)
- Input Type: Standard
- Gate Charge: 436nC
- Td (on/off) @ 25°C: 40ns/275ns
- Test Condition: 400V, 75A, 4 Ohm, 15V
- Reverse Recovery Time (trr): 114ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock16,314 |
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650V | 80A | 300A | 1.35V @ 15V, 75A | 536W | 1.61mJ (on), 3.2mJ (off) | Standard | 436nC | 40ns/275ns | 400V, 75A, 4 Ohm, 15V | 114ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 1200V 75A 480W TO247-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Power - Max: 480W
- Switching Energy: 5.25mJ
- Input Type: Standard
- Gate Charge: 192nC
- Td (on/off) @ 25°C: 33ns/314ns
- Test Condition: 600V, 40A, 12 Ohm, 15V
- Reverse Recovery Time (trr): 258ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock193,200 |
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1200V | 75A | 160A | 2.2V @ 15V, 40A | 480W | 5.25mJ | Standard | 192nC | 33ns/314ns | 600V, 40A, 12 Ohm, 15V | 258ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 1200V 80A 483W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 483W
- Switching Energy: 4.4mJ
- Input Type: Standard
- Gate Charge: 185nC
- Td (on/off) @ 25°C: 30ns/290ns
- Test Condition: 600V, 40A, 12 Ohm, 15V
- Reverse Recovery Time (trr): 355ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock137,040 |
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1200V | 80A | 160A | 2.4V @ 15V, 40A | 483W | 4.4mJ | Standard | 185nC | 30ns/290ns | 600V, 40A, 12 Ohm, 15V | 355ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 1200V 45A 200W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 45A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A
- Power - Max: 200W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 160nC
- Td (on/off) @ 25°C: 47ns/110ns
- Test Condition: 800V, 24A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 90ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock83,688 |
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1200V | 45A | 180A | 3.7V @ 15V, 24A | 200W | 2.1mJ (on), 1.5mJ (off) | Standard | 160nC | 47ns/110ns | 800V, 24A, 5 Ohm, 15V | 90ns | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC |
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Infineon Technologies |
IGBT 600V 80A 428W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 225A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 428W
- Switching Energy: 4.5mJ
- Input Type: Standard
- Gate Charge: 470nC
- Td (on/off) @ 25°C: 33ns/330ns
- Test Condition: 400V, 75A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 121ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock57,048 |
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600V | 80A | 225A | 2V @ 15V, 75A | 428W | 4.5mJ | Standard | 470nC | 33ns/330ns | 400V, 75A, 5 Ohm, 15V | 121ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 600V 96A 330W TO247AC
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 96A
- Current - Collector Pulsed (Icm): 144A
- Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
- Power - Max: 330W
- Switching Energy: 625µJ (on), 1.28mJ (off)
- Input Type: Standard
- Gate Charge: 95nC
- Td (on/off) @ 25°C: 60ns/145ns
- Test Condition: 400V, 48A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 115ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock295,080 |
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600V | 96A | 144A | 2.14V @ 15V, 48A | 330W | 625µJ (on), 1.28mJ (off) | Standard | 95nC | 60ns/145ns | 400V, 48A, 10 Ohm, 15V | 115ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC |
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Infineon Technologies |
IGBT 600V 90A 520W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 360A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
- Power - Max: 520W
- Switching Energy: 300µJ (on), 4.6mJ (off)
- Input Type: Standard
- Gate Charge: 290nC
- Td (on/off) @ 25°C: 42ns/310ns
- Test Condition: 480V, 60A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock29,340 |
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600V | 90A | 360A | 1.8V @ 15V, 60A | 520W | 300µJ (on), 4.6mJ (off) | Standard | 290nC | 42ns/310ns | 480V, 60A, 5 Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC |
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Infineon Technologies |
IGBT 600V 75A 390W TO247AC
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
- Power - Max: 390W
- Switching Energy: 255µJ (on), 375µJ (off)
- Input Type: Standard
- Gate Charge: 205nC
- Td (on/off) @ 25°C: 30ns/130ns
- Test Condition: 390V, 33A, 3.3 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock39,456 |
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600V | 75A | 150A | 2.85V @ 15V, 50A | 390W | 255µJ (on), 375µJ (off) | Standard | 205nC | 30ns/130ns | 390V, 33A, 3.3 Ohm, 15V | 42ns | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC |
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Infineon Technologies |
IGBT 600V 80A 333W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333W
- Switching Energy: 2.6mJ
- Input Type: Standard
- Gate Charge: 310nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7 Ohm, 15V
- Reverse Recovery Time (trr): 143ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock167,304 |
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600V | 80A | 150A | 2V @ 15V, 50A | 333W | 2.6mJ | Standard | 310nC | 26ns/299ns | 400V, 50A, 7 Ohm, 15V | 143ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 1200V 80A 483W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 483W
- Switching Energy: 3.16mJ
- Input Type: Standard
- Gate Charge: 185nC
- Td (on/off) @ 25°C: 30ns/290ns
- Test Condition: 600V, 40A, 12 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock487,596 |
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1200V | 80A | 160A | 2.4V @ 15V, 40A | 483W | 3.16mJ | Standard | 185nC | 30ns/290ns | 600V, 40A, 12 Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 1600V 60A 312W TO247-3
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 90A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 312W
- Switching Energy: 4.37mJ
- Input Type: Standard
- Gate Charge: 94nC
- Td (on/off) @ 25°C: -/525ns
- Test Condition: 600V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock402,624 |
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1600V | 60A | 90A | 2.1V @ 15V, 30A | 312W | 4.37mJ | Standard | 94nC | -/525ns | 600V, 30A, 10 Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 1200V 50A 326W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 326W
- Switching Energy: 2.65mJ
- Input Type: Standard
- Gate Charge: 115nC
- Td (on/off) @ 25°C: 27ns/277ns
- Test Condition: 600V, 25A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock55,902 |
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1200V | 50A | 100A | 2.4V @ 15V, 25A | 326W | 2.65mJ | Standard | 115nC | 27ns/277ns | 600V, 25A, 23 Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 600V 49A 160W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 49A
- Current - Collector Pulsed (Icm): 196A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
- Power - Max: 160W
- Switching Energy: 950µJ (on), 2.01mJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 63ns/230ns
- Test Condition: 480V, 27A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock115,464 |
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600V | 49A | 196A | 1.7V @ 15V, 27A | 160W | 950µJ (on), 2.01mJ (off) | Standard | 100nC | 63ns/230ns | 480V, 27A, 10 Ohm, 15V | 42ns | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC |
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Infineon Technologies |
IGBT 600V 40A 160W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 160W
- Switching Energy: 110µJ (on), 230µJ (off)
- Input Type: Standard
- Gate Charge: 98nC
- Td (on/off) @ 25°C: 27ns/100ns
- Test Condition: 480V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock6,876 |
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600V | 40A | 160A | 2.5V @ 15V, 20A | 160W | 110µJ (on), 230µJ (off) | Standard | 98nC | 27ns/100ns | 480V, 20A, 10 Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC |
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Infineon Technologies |
IGBT 430V 20A 125W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
- Power - Max: 125W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 900ns/6µs
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock10,728 |
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430V | 20A | - | 1.75V @ 5V, 14A | 125W | - | Logic | 27nC | 900ns/6µs | - | - | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Infineon Technologies |
IGBT 600V 16A 60W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 16A
- Current - Collector Pulsed (Icm): 32A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
- Power - Max: 60W
- Switching Energy: 340µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 34nC
- Td (on/off) @ 25°C: 54ns/180ns
- Test Condition: 480V, 9A, 50 Ohm, 15V
- Reverse Recovery Time (trr): 37ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock39,786 |
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600V | 16A | 32A | 2.8V @ 15V, 9A | 60W | 340µJ (on), 300µJ (off) | Standard | 34nC | 54ns/180ns | 480V, 9A, 50 Ohm, 15V | 37ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Infineon Technologies |
IGBT TRENCH 600V 80A TO247-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
- Power - Max: 305 W
- Switching Energy: 750µJ (off)
- Input Type: Standard
- Gate Charge: 223 nC
- Td (on/off) @ 25°C: -/193ns
- Test Condition: 400V, 40A, 5.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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Package: - |
Request a Quote |
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600 V | 80 A | 120 A | 2.05V @ 15V, 40A | 305 W | 750µJ (off) | Standard | 223 nC | -/193ns | 400V, 40A, 5.6Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-1 |
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Infineon Technologies |
IGBT TRENCH FS 650V 80A HSIP247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
- Power - Max: 154 W
- Switching Energy: 2.5mJ (on), 990µJ (off)
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 42ns/151ns
- Test Condition: 400V, 75A, 16Ohm, 15V
- Reverse Recovery Time (trr): 89 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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Package: - |
Stock714 |
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650 V | 80 A | 300 A | 1.75V @ 15V, 75A | 154 W | 2.5mJ (on), 990µJ (off) | Standard | 165 nC | 42ns/151ns | 400V, 75A, 16Ohm, 15V | 89 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-HSIP247-3-2 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 21ns/110ns | 300V, 10A, 27Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 21ns/110ns | 300V, 10A, 27Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 21ns/110ns | 300V, 10A, 27Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 21ns/110ns | 300V, 10A, 27Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
|
600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 21ns/110ns | 300V, 30A, 8.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 21ns/110ns | 300V, 30A, 8.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 21ns/110ns | 300V, 30A, 8.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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|
Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 21ns/110ns | 300V, 30A, 8.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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|
Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 21ns/110ns | 300V, 30A, 8.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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