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Infineon Technologies |
TRENCH >=100V
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Infineon Technologies |
IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,997 |
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Infineon Technologies |
IC DISCRETE 650V TO263-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 330µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 25ns/188ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): 67 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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Package: - |
Stock5,049 |
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650 V | 55 A | 90 A | 2.1V @ 15V, 30A | 188 W | 330µJ (on), 100µJ (off) | Standard | 70 nC | 25ns/188ns | 400V, 15A, 23Ohm, 15V | 67 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3 |
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Infineon Technologies |
IGBT 1200V 35A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 35A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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1200 V | - | 105 A | 2.07V @ 15V, 35A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 650V 61A HSIP247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 61 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 108 W
- Switching Energy: 1.52mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 142 nC
- Td (on/off) @ 25°C: 44ns/363ns
- Test Condition: 400V, 40A, 23.1Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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Package: - |
Stock1,218 |
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650 V | 61 A | 120 A | 2V @ 15V, 40A | 108 W | 1.52mJ (on), 700µJ (off) | Standard | 142 nC | 44ns/363ns | 400V, 40A, 23.1Ohm, 15V | 103 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-HSIP247-3-2 |
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Infineon Technologies |
TRENCH 40<-<100V
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 29ns/266ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 29ns/266ns | 400V, 10A, 25Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 29ns/266ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 29ns/266ns | 400V, 10A, 25Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 29ns/266ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 10 A | 30 A | 2.5V @ 15V, 10A | - | - | Standard | - | 29ns/266ns | 400V, 10A, 25Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 600V 8A TO252-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
- Power - Max: 36.6 W
- Switching Energy: 100µJ (on), 40µJ (off)
- Input Type: Standard
- Gate Charge: 24 nC
- Td (on/off) @ 25°C: 4ns/90ns
- Test Condition: 400V, 4A, 49Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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Package: - |
Stock44,331 |
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600 V | 8 A | 12 A | 2.3V @ 15V, 4A | 36.6 W | 100µJ (on), 40µJ (off) | Standard | 24 nC | 4ns/90ns | 400V, 4A, 49Ohm, 15V | 80 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | PG-TO252-3 |
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Infineon Technologies |
TRENCH 40<-<100V
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH FS 650V 17A TO220-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 17 A
- Current - Collector Pulsed (Icm): 57.5 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
- Power - Max: 45 W
- Switching Energy: 230µJ (on), 110µJ (off)
- Input Type: Standard
- Gate Charge: 37 nC
- Td (on/off) @ 25°C: 30ns/117ns
- Test Condition: 400V, 11.5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 69 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-3-FP
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Package: - |
Stock1,464 |
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650 V | 17 A | 57.5 A | 1.9V @ 15V, 11.5A | 45 W | 230µJ (on), 110µJ (off) | Standard | 37 nC | 30ns/117ns | 400V, 11.5A, 47Ohm, 15V | 69 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3-FP |
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Infineon Technologies |
IGBT 3 CHIP 600V 30A WAFER
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT 3 CHIP 600V 30A WAFER
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT CHIP SMD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH FS 600V 50A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 50 A | 150 A | 1.85V @ 15V, 50A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 1400V 80A TO247-44
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1400 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
- Power - Max: 366 W
- Switching Energy: -, 240µJ (off)
- Input Type: Standard
- Gate Charge: 260 nC
- Td (on/off) @ 25°C: -/225ns
- Test Condition: 25V, 40A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-44
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Package: - |
Stock639 |
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1400 V | 80 A | 120 A | 1.95V @ 15V, 40A | 366 W | -, 240µJ (off) | Standard | 260 nC | -/225ns | 25V, 40A, 2.2Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-44 |
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Infineon Technologies |
IGBT TRENCH FS 650V 55A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
- Power - Max: 136 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 97 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-32
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Package: - |
Stock423 |
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650 V | 55 A | 60 A | 1.7V @ 15V, 20A | 136 W | - | Standard | 97 nC | - | - | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-32 |
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Infineon Technologies |
IGBT 600V 34A TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 34 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
- Power - Max: 100 W
- Switching Energy: 260µJ (on), 3.45mJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 22ns/540ns
- Test Condition: 480V, 18A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
Request a Quote |
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600 V | 34 A | - | 1.6V @ 15V, 18A | 100 W | 260µJ (on), 3.45mJ (off) | Standard | - | 22ns/540ns | 480V, 18A, 23Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Infineon Technologies |
IGBT TRENCH FS 1350V 80A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
- Power - Max: 394 W
- Switching Energy: 2mJ (off)
- Input Type: Standard
- Gate Charge: 305 nC
- Td (on/off) @ 25°C: -/410ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: - |
Stock1,059 |
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1350 V | 80 A | 120 A | 1.95V @ 15V, 40A | 394 W | 2mJ (off) | Standard | 305 nC | -/410ns | 600V, 40A, 10Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Infineon Technologies |
IGBT 600V 11A WAFER
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
AUTOMOTIVE_SICMOS
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT CHIP
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 4A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 20 A | - | 1.3V @ 15V, 4A | - | - | Standard | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT TRENCH FS 1200V 150A TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 880 W
- Switching Energy: 2.2mJ (on), 2.95mJ (off)
- Input Type: Standard
- Gate Charge: 530 nC
- Td (on/off) @ 25°C: 32ns/300ns
- Test Condition: 600V, 75A, 4Ohm, 15V
- Reverse Recovery Time (trr): 205 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-2
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Package: - |
Stock774 |
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1200 V | 150 A | 300 A | 2.15V @ 15V, 75A | 880 W | 2.2mJ (on), 2.95mJ (off) | Standard | 530 nC | 32ns/300ns | 600V, 75A, 4Ohm, 15V | 205 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4-2 |
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Infineon Technologies |
IGBT TRENCH FS 650V 74A TO263-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 250 W
- Switching Energy: 420µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 22ns/160ns
- Test Condition: 400V, 40A, 15Ohm, 15V
- Reverse Recovery Time (trr): 83 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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Package: - |
Stock5,202 |
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650 V | 74 A | 160 A | 2.1V @ 15V, 40A | 250 W | 420µJ (on), 100µJ (off) | Standard | 95 nC | 22ns/160ns | 400V, 40A, 15Ohm, 15V | 83 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | PG-TO263-3 |
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Infineon Technologies |
IGBT TRENCH FS 600V 10A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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600 V | 10 A | 30 A | 1.9V @ 15V, 10A | - | - | Standard | - | - | - | - | -40°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
|
600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 21ns/110ns | 300V, 30A, 8.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 30A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
600 V | 30 A | 90 A | 2.5V @ 15V, 30A | - | - | Standard | - | 21ns/110ns | 300V, 30A, 8.2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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