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IXYS |
DIODE GEN PURP 4.2KV 1185A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4200 V
- Current - Average Rectified (Io): 1185A
- Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 4200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -55°C ~ 160°C
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4200 V | 1185A | 2.4 V @ 2420 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 4200 V | - | Clamp On | DO-200AB, B-PUK | W4 | -55°C ~ 160°C |
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IXYS |
DIODE GEN PURP 4.5KV 1185A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 1185A
- Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -55°C ~ 160°C
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Package: - |
Request a Quote |
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4500 V | 1185A | 2.4 V @ 2420 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 4500 V | - | Clamp On | DO-200AB, B-PUK | W4 | -55°C ~ 160°C |
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IXYS |
DIODE GP 1.2KV 109A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 109A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
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1200 V | 109A | 1.8 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 3 mA @ 1200 V | - | Surface Mount | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | TO-268AA | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 1.6KV 30A TO263AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 10pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock7,659 |
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1600 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AA | -40°C ~ 175°C |
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IXYS |
PWR DIODE DISC-FRED TO-220AB / T
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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IXYS |
DIODE GEN PURP 4.5KV 3410A W111
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 3410A
- Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 3000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.25 µs
- Current - Reverse Leakage @ Vr: 90 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W111
- Operating Temperature - Junction: -40°C ~ 140°C
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4500 V | 3410A | 3.1 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | 1.25 µs | 90 mA @ 4500 V | - | Chassis Mount | DO-200AE | W111 | -40°C ~ 140°C |
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IXYS |
DIODE GEN PURP 1.2KV 12A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 70 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 5pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock150 |
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1200 V | 12A | 3.25 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 100 µA @ 1200 V | 5pF @ 600V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 12A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 70 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 5pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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1200 V | 12A | 3.25 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 100 µA @ 1200 V | 5pF @ 600V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 5KV 1032A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 5000 V
- Current - Average Rectified (Io): 1032A
- Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 2420 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 µs
- Current - Reverse Leakage @ Vr: 30 mA @ 5000 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
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5000 V | 1032A | 2.7 V @ 2420 A | Standard Recovery >500ns, > 200mA (Io) | 30 µs | 30 mA @ 5000 V | - | Clamp On | DO-200AB, B-PUK | W4 | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 4.5KV 2490A W111
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 2490A
- Voltage - Forward (Vf) (Max) @ If: 3.65 V @ 2400 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.22 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W111
- Operating Temperature - Junction: -40°C ~ 140°C
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Package: - |
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4500 V | 2490A | 3.65 V @ 2400 A | Standard Recovery >500ns, > 200mA (Io) | 1.22 µs | 100 mA @ 4500 V | - | Chassis Mount | DO-200AE | W111 | -40°C ~ 140°C |
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IXYS |
DIODE GEN PURP 2.7KV 7395A W112
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2700 V
- Current - Average Rectified (Io): 7395A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 7000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 69 µs
- Current - Reverse Leakage @ Vr: 120 mA @ 2700 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W112
- Operating Temperature - Junction: -40°C ~ 160°C
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Package: - |
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2700 V | 7395A | 1.4 V @ 7000 A | Standard Recovery >500ns, > 200mA (Io) | 69 µs | 120 mA @ 2700 V | - | Chassis Mount | DO-200AE | W112 | -40°C ~ 160°C |
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IXYS |
DIODE GEN PURP 2.88KV 7395A W112
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2880 V
- Current - Average Rectified (Io): 7395A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 7000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 69 µs
- Current - Reverse Leakage @ Vr: 120 mA @ 2880 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W112
- Operating Temperature - Junction: -40°C ~ 160°C
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2880 V | 7395A | 1.4 V @ 7000 A | Standard Recovery >500ns, > 200mA (Io) | 69 µs | 120 mA @ 2880 V | - | Chassis Mount | DO-200AE | W112 | -40°C ~ 160°C |
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IXYS |
DIODE GEN PURP 6KV 6395A W111
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6000 V
- Current - Average Rectified (Io): 6395A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 73 µs
- Current - Reverse Leakage @ Vr: 120 mA @ 6000 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W111
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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6000 V | 6395A | 1.4 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | 73 µs | 120 mA @ 6000 V | - | Chassis Mount | DO-200AE | W111 | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 2.5KV 1263A W2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2500 V
- Current - Average Rectified (Io): 1263A
- Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 17 µs
- Current - Reverse Leakage @ Vr: 30 mA @ 2500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W2
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock6 |
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2500 V | 1263A | 2.12 V @ 3770 A | Standard Recovery >500ns, > 200mA (Io) | 17 µs | 30 mA @ 2500 V | - | Clamp On | DO-200AB, A-PUK | W2 | -40°C ~ 175°C |
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IXYS |
DIODE GEN PURP 2KV 1263A W2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000 V
- Current - Average Rectified (Io): 1263A
- Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 17 µs
- Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W2
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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2000 V | 1263A | 2.12 V @ 3770 A | Standard Recovery >500ns, > 200mA (Io) | 17 µs | 30 mA @ 2000 V | - | Clamp On | DO-200AB, A-PUK | W2 | -40°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 1263A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 1263A
- Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 17 µs
- Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock33 |
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1600 V | 1263A | 2.12 V @ 3770 A | Standard Recovery >500ns, > 200mA (Io) | 17 µs | 30 mA @ 1600 V | - | Clamp On | DO-200AB, B-PUK | - | -40°C ~ 175°C |
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IXYS |
DIODE AVAL 1.8KV 10A TO263HV
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1800 V | 10A | 1.21 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1800 V | 4pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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IXYS |
DIODE AVAL 1.8KV 10A TO263HV
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1800 V | 10A | 1.21 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1800 V | 4pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 3.6KV 1411A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3600 V
- Current - Average Rectified (Io): 1411A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -55°C ~ 160°C
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Package: - |
Request a Quote |
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3600 V | 1411A | 2 V @ 2870 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 3600 V | - | Clamp On | DO-200AB, B-PUK | W4 | -55°C ~ 160°C |
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IXYS |
DIODE GEN PURP 3.2KV 1411A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3200 V
- Current - Average Rectified (Io): 1411A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 3200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -55°C ~ 160°C
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Package: - |
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3200 V | 1411A | 2 V @ 2870 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 3200 V | - | Clamp On | DO-200AB, B-PUK | W4 | -55°C ~ 160°C |
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IXYS |
DIODE GEN PURP 4.5KV 659A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 659A
- Voltage - Forward (Vf) (Max) @ If: 3 V @ 1400 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4.2 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
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4500 V | 659A | 3 V @ 1400 A | Standard Recovery >500ns, > 200mA (Io) | 4.2 µs | 100 mA @ 4500 V | - | Clamp On | DO-200AB, B-PUK | W4 | -40°C ~ 125°C |
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IXYS |
POWER DIODE DISCRETES-FRED TO-24
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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IXYS |
DIODE GEN PURP 4.5KV 1355A W122
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 1355A
- Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.2 µs
- Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: W122
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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4500 V | 1355A | 2.07 V @ 1250 A | Standard Recovery >500ns, > 200mA (Io) | 1.2 µs | 1 mA @ 4500 V | - | Chassis Mount | DO-200AD | W122 | - |
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IXYS |
DIODE GEN PURP 1.2KV 50A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
- Capacitance @ Vr, F: 19pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1200 V | 50A | 1.3 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1200 V | 19pF @ 400V, 1MHz | Through Hole | TO-247-3 | TO-247 (IXTH) | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 2KV 642A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000 V
- Current - Average Rectified (Io): 642A
- Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 1900 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15 µs
- Current - Reverse Leakage @ Vr: 15 mA @ 2000 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
Request a Quote |
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2000 V | 642A | 2.37 V @ 1900 A | Standard Recovery >500ns, > 200mA (Io) | 15 µs | 15 mA @ 2000 V | - | Clamp On | DO-200AB, A-PUK | W1 | -40°C ~ 180°C |
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IXYS |
DIODE GEN PURP 1.6KV 642A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 642A
- Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 1900 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15 µs
- Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
Request a Quote |
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1600 V | 642A | 2.37 V @ 1900 A | Standard Recovery >500ns, > 200mA (Io) | 15 µs | 15 mA @ 1600 V | - | Clamp On | DO-200AB, A-PUK | W1 | -40°C ~ 180°C |
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IXYS |
DIODE GEN PURP 1.4KV 859A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io): 859A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1750 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
Request a Quote |
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1400 V | 859A | 1.7 V @ 1750 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 50 mA @ 1400 V | - | Clamp On | DO-200AB, B-PUK | W4 | -40°C ~ 125°C |
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IXYS |
DIODE GEN PURP 1.4KV 437A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io): 437A
- Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
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1400 V | 437A | 1.47 V @ 635 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1400 V | - | Clamp On | DO-200AB, A-PUK | W1 | -40°C ~ 125°C |