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DIODE GEN PURP 1.6KV 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
- Capacitance @ Vr, F: 1pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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1600 V | 10A | 1.55 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1600 V | 1pF @ 400V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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DIODE GEN PURP 1.6KV 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
- Capacitance @ Vr, F: 1pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1600 V | 10A | 1.55 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1600 V | 1pF @ 400V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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DIODE GEN PURP 1.2KV 759A W2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 759A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W2
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
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1200 V | 759A | 1.7 V @ 1500 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 50 mA @ 1200 V | - | Clamp On | DO-200AB, A-PUK | W2 | -40°C ~ 125°C |
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DIODE GEN PURP 1.6KV 759A W2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 759A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W2
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
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1600 V | 759A | 1.7 V @ 1500 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 50 mA @ 1600 V | - | Clamp On | DO-200AB, A-PUK | W2 | -40°C ~ 125°C |
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DIODE GEN PURP 1.2KV 30A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 12pF @ 600V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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1200 V | 30A | 3.76 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 100 µA @ 1200 V | 12pF @ 600V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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DIODE GEN PURP 1.2KV 1022A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 1022A
- Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
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1200 V | 1022A | 1.85 V @ 2050 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 100 mA @ 1200 V | - | Clamp On | DO-200AB, B-PUK | W4 | -40°C ~ 125°C |
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DIODE GEN PURP 1.6KV 1022A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 1022A
- Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
Request a Quote |
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1600 V | 1022A | 1.85 V @ 2050 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 100 mA @ 1600 V | - | Clamp On | DO-200AB, B-PUK | W4 | -40°C ~ 125°C |
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DIODE GEN PURP 1.8KV 10A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1800 V | 10A | 1.26 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1800 V | 4pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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DIODE GEN PURP 1.8KV 10A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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1800 V | 10A | 1.26 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1800 V | 4pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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DIODE SCHOTT 1.2KV 12.5A ISO247
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
- Capacitance @ Vr, F: 755pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISO247
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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1200 V | 12.5A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 1200 V | 755pF @ 0V, 1MHz | Through Hole | TO-247-3 | ISO247 | -40°C ~ 150°C |
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DIODE GEN PURP 1.2KV 30A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
- Capacitance @ Vr, F: 11pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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1200 V | 30A | 1.26 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1200 V | 11pF @ 400V, 1MHz | Through Hole | TO-247-3 | TO-247 (IXTH) | -55°C ~ 175°C |
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DIODE GEN PURP 4KV 3470A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4000 V
- Current - Average Rectified (Io): 3470A
- Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 38 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 4000 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 160°C
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Package: - |
Request a Quote |
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4000 V | 3470A | 1.34 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | 38 µs | 100 mA @ 4000 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 160°C |
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DIODE GEN PURP 3.6KV 3470A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3600 V
- Current - Average Rectified (Io): 3470A
- Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 38 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 160°C
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Package: - |
Request a Quote |
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3600 V | 3470A | 1.34 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | 38 µs | 100 mA @ 3600 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 160°C |
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DIODE GEN PURP 300V 60A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 300 V
- Capacitance @ Vr, F: 80pF @ 150V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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300 V | 60A | 1.43 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 300 V | 80pF @ 150V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) | -55°C ~ 175°C |
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DIODE GEN PURP 300V 60A TO263AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 300 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock9,669 |
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300 V | 60A | 1.43 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 300 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AA | -55°C ~ 175°C |
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DIODE GEN PURP 600V 15A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 15A | 2.04 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 100 µA @ 600 V | 12pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) | -55°C ~ 175°C |
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DIODE GEN PURP 600V 15A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 15A | 2.04 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 100 µA @ 600 V | 12pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) | -55°C ~ 175°C |
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DIODE GEN PURP 1.6KV 50A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 19pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1600 V | 50A | 1.3 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 19pF @ 400V, 1MHz | Through Hole | TO-247-3 | TO-247 (IXTH) | -55°C ~ 175°C |
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DIODE GEN PURP 1.6KV 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1600 V | 10A | 1.26 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | 4pF @ 400V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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DIODE GEN PURP 1.6KV 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock420 |
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1600 V | 10A | 1.26 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | 4pF @ 400V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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DIODE GEN PURP 2.2KV 4755A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 4755A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 26 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 2200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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2200 V | 4755A | 1.05 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | 26 µs | 50 mA @ 2200 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 175°C |
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DIODE GP 4.5KV 43A ISOPLUS264
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 43A
- Voltage - Forward (Vf) (Max) @ If: 3 V @ 50 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.45 µs
- Current - Reverse Leakage @ Vr: 100 µA @ 4500 V
- Capacitance @ Vr, F: 13pF @ 1.8kV, 1MHz
- Mounting Type: Through Hole
- Package / Case: ISOPLUS264™
- Supplier Device Package: ISOPLUS264™
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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4500 V | 43A | 3 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | 1.45 µs | 100 µA @ 4500 V | 13pF @ 1.8kV, 1MHz | Through Hole | ISOPLUS264™ | ISOPLUS264™ | -40°C ~ 150°C |
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DIODE GEN PURP 1.2KV 90A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 90A
- Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85 ns
- Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
- Capacitance @ Vr, F: 48pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock90 |
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1200 V | 90A | 2.69 V @ 90 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 1 mA @ 1200 V | 48pF @ 600V, 1MHz | Surface Mount | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | TO-268AA (D3Pak-HV) | -55°C ~ 175°C |
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DIODE GEN PURP 1.6KV 80A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 43pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock8,064 |
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1600 V | 80A | 1.17 V @ 80 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 43pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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DIODE GEN PURP 600V 30A ISO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 500 µA @ 600 V
- Capacitance @ Vr, F: 26pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISO247
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 30A | 1.62 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 500 µA @ 600 V | 26pF @ 400V, 1MHz | Through Hole | TO-247-3 | ISO247 | -55°C ~ 175°C |
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DIODE SCHOTTKY 100V 16A TO263AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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100 V | 16A | 790 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AA | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.8KV 10815A W112
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10815A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W112
- Operating Temperature - Junction: -
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Package: - |
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1800 V | 10815A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | DO-200AE | W112 | - |
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IXYS |
DIODE GEN PURP 2.2KV 10815A W112
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 10815A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W112
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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2200 V | 10815A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | DO-200AE | W112 | - |
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